Publications
] , "Effect of Sb composition on lateral oxidation rates in AlAs 1- x Sb x", Applied Physics Letters, vol. 76, no. 10: AIP, pp. 1291–1293, 2000.
, "Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy", Applied Physics Letters, vol. 77, no. 20: AIP, pp. 3167–3169, 2000.
, "Electrical transport of an AlGaN/GaN two-dimensional electron gas", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 619–625, 2000.
, "Electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Japanese Journal of Applied Physics, vol. 39, no. 10B: IOP Publishing, pp. L1023, 2000.
, "(Ga, Mn) As as a digital ferromagnetic heterostructure", Applied Physics Letters, vol. 77, no. 15: AIP, pp. 2379–2381, 2000.
, "Growth and characterization of graded AlGaN conducting buffer layers on n+ SiC substrates", Journal of crystal growth, vol. 221, no. 1-4: North-Holland, pp. 301–304, 2000.
, "HBT on LEO GaN", Device Research Conference, 2000. Conference Digest. 58th DRC: IEEE, pp. 85–86, 2000.
, "Hydrogen passivation of deep levels in n–GaN", Applied Physics Letters, vol. 77, no. 10: AIP, pp. 1499–1501, 2000.
, "Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire", Applied Physics Letters, vol. 76, no. 5: AIP, pp. 529–531, 2000.
, "Improved characteristics of InGaN multi-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 8–13, 2000.
, "In situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN", Applied Physics Letters, vol. 76, no. 26: AIP, pp. 3893–3895, 2000.
, "In situ studies of the effect of silicon on GaN growth modes", Journal of crystal growth, vol. 221, no. 1-4: North-Holland, pp. 98–105, 2000.
, "LASERS, OPTICS, AND OPTOELECTRONICS-Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire", Applied Physics Letters, vol. 76, no. 5: New York [etc.] American Institute of Physics., pp. 529–531, 2000.
, "Layer-by-layer growth of GaN induced by silicon", Applied Physics Letters, vol. 77, no. 11: AIP, pp. 1626–1628, 2000.
, Measurement and minimization of wing tilt in laterally overgrown GaN on a SiO ${$sub 2$}$ mask.: Argonne National Lab., IL (US), 2000.
, "Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy", Applied Physics Letters, vol. 76, no. 6: AIP, pp. 718–720, 2000.
, "Microwave integrated circuits using thin-film BST", Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on, vol. 1: IEEE, pp. 195–200, 2000.
, "Modeling of threading dislocation reduction in growing GaN layers", Physica Status Solidi A Applied Research, vol. 179, no. 1: ACADEMIC VERLAG GMBH, pp. 125–146, 2000.
, "Molecular beam epitaxy of InGaN/GaN heterostructures for green luminescence", Compound Semiconductors, 2000 IEEE International Symposium on: IEEE, pp. 371–376, 2000.
, "Monolithic Ka-band phase shifter using voltage tunable BaSrTiO/sub 3/parallel plate capacitors", IEEE microwave and guided wave letters, vol. 10, no. 1: IEEE, pp. 10–12, 2000.
, "Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes", Applied Physics Letters, vol. 76, no. 21: AIP, pp. 3064–3066, 2000.
, "Optimization of the Electron Mobilites in GaN Grown by Plasma-assisted Molecular Beam Epitaxy", Proc. Int. Workshop on Nitride Semiconductors, IPAP Conf. Series, 2000.
, "Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 77, no. 18: AIP, pp. 2885–2887, 2000.
, "Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces-Interface Strain Effects and Atomic Level Characterization-Strain relaxation of InGaAs by lateral", Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur, vol. 18, no. 4: Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-, pp. 2066–2071, 2000.
, "Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces-Quantum Dots and Self-Assembled Interface Structures-Controlled ordering and positioning of InAs", Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur, vol. 18, no. 4: Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-, pp. 2193–2196, 2000.