Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces-Interface Strain Effects and Atomic Level Characterization-Strain relaxation of InGaAs by lateral

TitlePapers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces-Interface Strain Effects and Atomic Level Characterization-Strain relaxation of InGaAs by lateral
Publication TypeJournal Article
Year of Publication2000
AuthorsMathis, SK., P. Chavarkar, AM. Andrews, UK. Mishra, and JS. Speck
JournalJournal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur
Volume18
Pagination2066–2071