Publications

Found 1586 results
Author Title Type [ Year(Desc)]
2008
White, ME., MY. Tsai, F. Wu, and JS. Speck, "Plasma-assisted molecular beam epitaxy and characterization of Sn O 2 (101) on r-plane sapphire", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 26, no. 5: AVS, pp. 1300–1307, 2008.
Tsai, MY., ME. White, and JS. Speck, "Plasma-assisted molecular beam epitaxy of SnO2 on TiO2", Journal of Crystal Growth, vol. 310, no. 18: North-Holland, pp. 4256–4261, 2008.
Wong, M. Hoi, F. Wu, T. E. Mates, J. S. Speck, and U. K. Mishra, "Polarity inversion of N-face GaN by plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 104, no. 9: AIP, pp. 093710, 2008.
Wong, M. Hoi, Y. Pei, R. Chu, S. Rajan, B. L. Swenson, D. F. Brown, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier", Device Research Conference, 2008: IEEE, pp. 201–202, 2008.
Nakamura, S., U. Mishra, S. DenBaars, J. S. Speck, M. Wraback, Y. Arakawa, A. Allerman, N. Grandjean, J. Shealy, M. Krames, et al., "Preface: phys. stat. sol.(c) 5/6", physica status solidi (c), vol. 5, no. 6: Wiley Online Library, pp. 1472–1474, 2008.
Keller, S., CS. Suh, Z. Chen, R. Chu, S. Rajan, NA. Fichtenbaum, M. Furukawa, SP. DenBaars, JS. Speck, and UK. Mishra, "Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition", Journal of Applied Physics, vol. 103, no. 3: AIP, pp. 033708, 2008.
Ive, T., T. Ben-Yaacov, H. Asamizu, CG. Van de Walle, U. Mishra, SP. DenBaars, and JS. Speck, "Properties of ZnO (0001) layers grown by metalorganic chemical vapor deposition on GaN (0001) templates", physica status solidi (c), vol. 5, no. 6: Wiley Online Library, pp. 1733–1735, 2008.
Chu, R., C. Poblenz, M. Hoi Wong, S. Dasgupta, S. Rajan, Y. Pei, F. Recht, L. Shen, J. S. Speck, and U. K. Mishra, "Semiconductor, superconductor, spintronic, dielectric, and organic materials-Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment", Applied Physics Express, vol. 1, no. 6, pp. 61101, 2008.
Hashimoto, T., F. Wu, M. Saito, K. Fujito, J. S. Speck, and S. Nakamura, "Status and perspectives of the ammonothermal growth of GaN substrates", Journal of Crystal Growth, vol. 310, no. 5: Elsevier, pp. 876–880, 2008.
Ive, T., T. Ben-Yaacov, CG. Van de Walle, UK. Mishra, SP. DenBaars, and JS. Speck, "Step-flow growth of ZnO (0 0 0 1) on GaN (0 0 0 1) by metalorganic chemical vapor epitaxy", Journal of Crystal Growth, vol. 310, no. 15: North-Holland, pp. 3407–3412, 2008.
Tyagi, A., Y-. Da Lin, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Stimulated emission at blue-green (480 nm) and green (514 nm) wavelengths from nonpolar (m-plane) and semipolar (1122) InGaN multiple quantum well laser diode structures", Applied physics express, vol. 1, no. 9: IOP Publishing, pp. 091103, 2008.
Corrion, AL., C. Poblenz, F. Wu, and JS. Speck, "Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors", Journal of Applied Physics, vol. 103, no. 9: AIP, pp. 093529, 2008.
Nidhi, S. Rajan, S. Keller, F. Wu, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Study of interface barrier of SiN x/GaN interface for nitrogen-polar GaN based high electron mobility transistors", Journal of Applied Physics, vol. 103, no. 12: AIP, pp. 124508, 2008.
Choi, Y-S., M. Iza, E. Matioli, G. Koblmüller, J. S. Speck, C. Weisbuch, and E. L. Hu, "Submicron-thick microcavity InGaN light emitting diodes", Light-Emitting Diodes: Research, Manufacturing, and Applications XII, vol. 6910: International Society for Optics and Photonics, pp. 69100R, 2008.
Choi, Y., M. Iza, E. Matioli, G. Koblmüller, JS. Speck, C. Weisbuch, and EL. Hu, "Submicron-thick microcavity InGaN light emitting diodes [6910-27]", PROCEEDINGS-SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, vol. 6910: International Society for Optical Engineering; 1999, pp. 6910, 2008.
Metcalfe, G. D., E. D. Readinger, H. Shen, M. Wraback, A. Hirai, E. Young, and J. S. Speck, "Terahertz emission from nonpolar gallium nitride", Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on: IEEE, pp. 1–2, 2008.
Garrett, G. A., H. Shen, M. Wraback, A. Tyagi, M. C. Schmidt, Z. Jia, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Time-resolved optical studies of InGaN LED structures grown on semipolar and nonpolar bulk GaN substrates", Conference on Lasers and Electro-Optics: Optical Society of America, pp. CMAA1, 2008.
Barabash, RI., G. E. Ice, BA. Haskell, S. Nakamura, JS. Speck, and W. Liu, "White X-ray microdiffraction analysis of defects, strain and tilts in a free standing GaN film", physica status solidi (b), vol. 245, no. 5: Wiley Online Library, pp. 899–902, 2008.
Pei, Y., C. Poblenz, AL. Corrion, R. Chu, L. Shen, JS. Speck, and UK. Mishra, "X-and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE", Electronics Letters, vol. 44, no. 9: IET, pp. 598–598, 2008.
2009
Suh, I., P. Roblin, Y. Ko, C-K. Yang, A. Malonis, A. Arehart, S. Ringel, C. Poblenz, Y. Pei, J. Speck, et al., "Additive phase noise measurements of AlGaN/GaN HEMTs using a large signal network analyzer and a tunable monochromatic light source", Microwave Measurement Symposium, 2009 74th ARFTG: IEEE, pp. 1–5, 2009.
Tyagi, A., R. M. Farrell, K. M. Kelchner, C-Y. Huang, P. Shan Hsu, D. A. Haeger, M. T. Hardy, C. Holder, K. Fujito, D. A. Cohen, et al., "AlGaN-cladding free green semipolar GaN based laser diode with a lasing wavelength of 506.4 nm", Applied Physics Express, vol. 3, no. 1: IOP Publishing, pp. 011002, 2009.
Da Lin, Y-., M. T. Hardy, P. Shan Hsu, K. M. Kelchner, C-Y. Huang, D. A. Haeger, R. M. Farrell, K. Fujito, A. Chakraborty, H. Ohta, et al., "Blue-green InGaN/GaN laser diodes on miscut m-plane GaN substrate", Applied physics express, vol. 2, no. 8: IOP Publishing, pp. 082102, 2009.
Da Lin, Y-., A. Chakraborty, S. Brinkley, H. Chih Kuo, T. Melo, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Characterization of blue-green m-plane InGaN light emitting diodes", Applied Physics Letters, vol. 94, no. 26: AIP, pp. 261108, 2009.
Yang, C-K., P. Roblin, A. Malonis, A. Arehart, S. Ringel, C. Poblenz, Y. Pei, J. Speck, and U. Mishra, "Characterization of traps in AlGaN/GaN HEMTs with a combined large signal network analyzer/deep level optical spectrometer system", Microwave Symposium Digest, 2009. MTT'09. IEEE MTT-S International: IEEE, pp. 1209–1212, 2009.
Garrett, G. A., H. Shen, M. Wraback, A. Tyagi, M. C. Schmidt, J. S. Speck, S. P. DenBaars, and S. Nakamaura, "Comparison of time-resolved photoluminescence from InGaN single quantum wells grown on nonpolar and semipolar bulk GaN substrates", physica status solidi (c), vol. 6, no. S2: WILEY-VCH Verlag, 2009.

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