Publications

Found 115 results
Author Title Type [ Year(Asc)]
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2008
Bierwagen, O., T. Ive, C. G. Van de Walle, and J. S. Speck, "Causes of incorrect carrier-type identification in van der Pauw–Hall measurements", Applied Physics Letters, vol. 93, no. 24: AIP, pp. 242108, 2008.
Armstrong, A., J. Caudill, A. Corrion, C. Poblenz, UK. Mishra, JS. Speck, and SA. Ringel, "Characterization of majority and minority carrier deep levels in p-type GaN: Mg grown by molecular beam epitaxy using deep level optical spectroscopy", Journal of Applied Physics, vol. 103, no. 6: AIP, pp. 063722, 2008.
Law, JJM., ET. Yu, BA. Haskell, PT. Fini, S. Nakamura, JS. Speck, and SP. DenBaars, "Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy", Journal of Applied Physics, vol. 103, no. 1: AIP, pp. 014305, 2008.
Arehart, AR., A. Corrion, C. Poblenz, JS. Speck, UK. Mishra, SP. DenBaars, and SA. Ringel, "Comparison of deep level incorporation in ammonia and rf-plasma assisted molecular beam epitaxy n-GaN films", physica status solidi (c), vol. 5, no. 6: Wiley Online Library, pp. 1750–1752, 2008.
Yamada, H., K. Iso, M. Saito, H. Hirasawa, N. Fellows, H. Masui, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Comparison of InGaN/GaN light emitting diodes grown on m-plane and a-plane bulk GaN substrates", physica status solidi (RRL)-Rapid Research Letters, vol. 2, no. 2: Wiley Online Library, pp. 89–91, 2008.
Kim, K. Choong, M. C. Schmidt, F. Wu, A. Hirai, M. B. McLaurin, S. P. DenBaars, S. Nakamura, and J. S. Speck, CRYSTAL GROWTH OF M-PLANE AND SEMIPOLAR PLANES OF (Al, In, Ga, B) N ON VARIOUS SUBSTRATES, 2008.
2007
Newman, S. A., D. S. Kamber, Y. Wu, E. Letts, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Cantilever Epitaxy of AlN using Hydride Vapor Phase Epitaxy", APS Meeting Abstracts, 2007.
Fehlberg, T. B., G. A. Umana-Membreno, C. S. Gallinat, G. Koblmüller, S. Bernardis, B. D. Nener, G. Parish, and J. S. Speck, "Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy", physica status solidi (c), vol. 4, no. 7: Wiley Online Library, pp. 2423–2427, 2007.
Armstrong, A., A. Chakraborty, J. S. Speck, S. P. DenBaars, U. K. Mishra, and S. A. Ringel, "Characterization and Discrimination of AlGaN-and GaN-related Deep Levels in AlGaN/GaN Heterostructures", AIP Conference Proceedings, vol. 893, no. 1: AIP, pp. 223–224, 2007.
Nakamura, S., SP. DenBaars, JS. Speck, MC. Schmidt, KC. Kim, RM. Farrell, DF. Feezell, DA. Cohen, M. Saito, H. Sato, et al., "CK-1-1 Recent Performance of Nonpolar/Semipolar GaN-based Blue LEDs/LDs", ?????????????????????, vol. 2007, no. 2: ??????????????, 2007.
Armstrong, A., C. Poblenz, UK. Mishra, JS. Speck, and SA. Ringel, "Comparison of deep level spectra in p-type and n-type GaN grown by molecular beam epitaxy", physica status solidi (b), vol. 244, no. 6: Wiley Online Library, pp. 1867–1871, 2007.
Armstrong, A., A. Corrion, C. Poblenz, UK. Mishra, JS. Speck, and SA. Ringel, "Comparison of deep level spectra in p-type and n-type GaN grown by molecular beam epitaxy [phys. stat. sol.(b) 244, No. 6, 1867–1871 (2007)]", physica status solidi (b), vol. 244, no. 12: Wiley Online Library, pp. 4692–4692, 2007.
Chu, R., CS. Suh, MH. Wong, N. Fichtenbaum, D. Brown, L. McCarthy, S. Keller, F. Wu, JS. Speck, and UK. Mishra, "Compound Semiconductor Devices-Impact of CF4 Plasma Treatment on GaN", IEEE Electron Device Letters, vol. 28, no. 9, pp. 781, 2007.
Farrell, R. M., D. F. Feezell, M. C. Schmidt, D. A. Haeger, K. M. Kelchner, K. Iso, H. Yamada, M. Saito, K. Fujito, D. A. Cohen, et al., "Continuous-wave operation of AlGaN-cladding-free nonpolar m-plane InGaN/GaN laser diodes", Japanese Journal of Applied Physics, vol. 46, no. 8L: IOP Publishing, pp. L761, 2007.
Romanov, A. E., G. E. Beltz, and J. S. Speck, "Crack formation in surface layers with strain gradients", International Journal of Materials Research, vol. 98, no. 8: Carl Hanser Verlag, pp. 723–728, 2007.
2006
Fehlberg, T. B., G. A. Umana-Membreno, B. D. Nener, G. Parish, C. S. Gallinat, G. Koblmüller, S. Bernardis, and J. S. Speck, "Characterisation of Electron Transport in MBE Grown Indium Nitride", Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on: IEEE, pp. 11–14, 2006.
Fehlberg, T. B., G. A. Umana-Membreno, B. D. Nener, G. Parish, C. S. Gallinat, G. Koblmüller, S. Rajan, S. Bernardis, and J. S. Speck, "Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy", Japanese journal of applied physics, vol. 45, no. 10L: IOP Publishing, pp. L1090, 2006.
Barabash, R. I., O. M. Barabash, G. E. Ice, C. Roder, S. Figge, S. Einfeldt, D. Hommel, TM. Katona, JS. Speck, SP. DenBaars, et al., "Characterization of crystallographic properties and defects via X-ray microdiffraction in GaN (0001) layers", physica status solidi (a), vol. 203, no. 1: WILEY-VCH Verlag, pp. 142–148, 2006.
Baker, T. J., B. A. Haskell, F. Wu, J. S. Speck, and S. Nakamura, "Characterization of planar semipolar gallium nitride films on sapphire substrates", Japanese Journal of Applied Physics, vol. 45, no. 2L: IOP Publishing, pp. L154, 2006.
Chern, G., E. Readinger, H. Shen, M. Wraback, C. Gallinat, G. Koblmueller, and J. Speck, "Comparison of terahertz emission from N-face and In-face indium nitride thin films", APS Meeting Abstracts, 2006.
Romanov, AE., GE. Beltz, P. Cantu, F. Wu, S. Keller, SP. DenBaars, and JS. Speck, "Cracking of III-nitride layers with strain gradients", Applied physics letters, vol. 89, no. 16: AIP, pp. 161922, 2006.
Moe, C. G., Y. Wu, S. Keller, J. S. Speck, S. P. DenBaars, and D. Emerson, "Crystal quality and growth evolution of aluminum nitride on silicon carbide", physica status solidi (a), vol. 203, no. 7: Wiley Online Library, pp. 1708–1711, 2006.
2005
Baker, T. J., B. A. Haskell, F. Wu, P. T. Fini, J. S. Speck, and S. Nakamura, "Characterization of planar semipolar gallium nitride films on spinel substrates", Japanese journal of applied physics, vol. 44, no. 7L: IOP Publishing, pp. L920, 2005.

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