Publications

Found 115 results
Author Title Type [ Year(Desc)]
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2007
Armstrong, A., A. Chakraborty, J. S. Speck, S. P. DenBaars, U. K. Mishra, and S. A. Ringel, "Characterization and Discrimination of AlGaN-and GaN-related Deep Levels in AlGaN/GaN Heterostructures", AIP Conference Proceedings, vol. 893, no. 1: AIP, pp. 223–224, 2007.
Nakamura, S., SP. DenBaars, JS. Speck, MC. Schmidt, KC. Kim, RM. Farrell, DF. Feezell, DA. Cohen, M. Saito, H. Sato, et al., "CK-1-1 Recent Performance of Nonpolar/Semipolar GaN-based Blue LEDs/LDs", ?????????????????????, vol. 2007, no. 2: ??????????????, 2007.
Armstrong, A., C. Poblenz, UK. Mishra, JS. Speck, and SA. Ringel, "Comparison of deep level spectra in p-type and n-type GaN grown by molecular beam epitaxy", physica status solidi (b), vol. 244, no. 6: Wiley Online Library, pp. 1867–1871, 2007.
Armstrong, A., A. Corrion, C. Poblenz, UK. Mishra, JS. Speck, and SA. Ringel, "Comparison of deep level spectra in p-type and n-type GaN grown by molecular beam epitaxy [phys. stat. sol.(b) 244, No. 6, 1867–1871 (2007)]", physica status solidi (b), vol. 244, no. 12: Wiley Online Library, pp. 4692–4692, 2007.
Chu, R., CS. Suh, MH. Wong, N. Fichtenbaum, D. Brown, L. McCarthy, S. Keller, F. Wu, JS. Speck, and UK. Mishra, "Compound Semiconductor Devices-Impact of CF4 Plasma Treatment on GaN", IEEE Electron Device Letters, vol. 28, no. 9, pp. 781, 2007.
Farrell, R. M., D. F. Feezell, M. C. Schmidt, D. A. Haeger, K. M. Kelchner, K. Iso, H. Yamada, M. Saito, K. Fujito, D. A. Cohen, et al., "Continuous-wave operation of AlGaN-cladding-free nonpolar m-plane InGaN/GaN laser diodes", Japanese Journal of Applied Physics, vol. 46, no. 8L: IOP Publishing, pp. L761, 2007.
Romanov, A. E., G. E. Beltz, and J. S. Speck, "Crack formation in surface layers with strain gradients", International Journal of Materials Research, vol. 98, no. 8: Carl Hanser Verlag, pp. 723–728, 2007.
2008
Bierwagen, O., T. Ive, C. G. Van de Walle, and J. S. Speck, "Causes of incorrect carrier-type identification in van der Pauw–Hall measurements", Applied Physics Letters, vol. 93, no. 24: AIP, pp. 242108, 2008.
Armstrong, A., J. Caudill, A. Corrion, C. Poblenz, UK. Mishra, JS. Speck, and SA. Ringel, "Characterization of majority and minority carrier deep levels in p-type GaN: Mg grown by molecular beam epitaxy using deep level optical spectroscopy", Journal of Applied Physics, vol. 103, no. 6: AIP, pp. 063722, 2008.
Law, JJM., ET. Yu, BA. Haskell, PT. Fini, S. Nakamura, JS. Speck, and SP. DenBaars, "Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy", Journal of Applied Physics, vol. 103, no. 1: AIP, pp. 014305, 2008.
Arehart, AR., A. Corrion, C. Poblenz, JS. Speck, UK. Mishra, SP. DenBaars, and SA. Ringel, "Comparison of deep level incorporation in ammonia and rf-plasma assisted molecular beam epitaxy n-GaN films", physica status solidi (c), vol. 5, no. 6: Wiley Online Library, pp. 1750–1752, 2008.
Yamada, H., K. Iso, M. Saito, H. Hirasawa, N. Fellows, H. Masui, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Comparison of InGaN/GaN light emitting diodes grown on m-plane and a-plane bulk GaN substrates", physica status solidi (RRL)-Rapid Research Letters, vol. 2, no. 2: Wiley Online Library, pp. 89–91, 2008.
Kim, K. Choong, M. C. Schmidt, F. Wu, A. Hirai, M. B. McLaurin, S. P. DenBaars, S. Nakamura, and J. S. Speck, CRYSTAL GROWTH OF M-PLANE AND SEMIPOLAR PLANES OF (Al, In, Ga, B) N ON VARIOUS SUBSTRATES, 2008.
2009
Da Lin, Y-., A. Chakraborty, S. Brinkley, H. Chih Kuo, T. Melo, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Characterization of blue-green m-plane InGaN light emitting diodes", Applied Physics Letters, vol. 94, no. 26: AIP, pp. 261108, 2009.
Yang, C-K., P. Roblin, A. Malonis, A. Arehart, S. Ringel, C. Poblenz, Y. Pei, J. Speck, and U. Mishra, "Characterization of traps in AlGaN/GaN HEMTs with a combined large signal network analyzer/deep level optical spectrometer system", Microwave Symposium Digest, 2009. MTT'09. IEEE MTT-S International: IEEE, pp. 1209–1212, 2009.
Garrett, G. A., H. Shen, M. Wraback, A. Tyagi, M. C. Schmidt, J. S. Speck, S. P. DenBaars, and S. Nakamaura, "Comparison of time-resolved photoluminescence from InGaN single quantum wells grown on nonpolar and semipolar bulk GaN substrates", physica status solidi (c), vol. 6, no. S2: WILEY-VCH Verlag, 2009.
Asamizu, H., M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1 12 2) Plane Gallium Nitrides", Applied physics express, vol. 2, no. 2: IOP Publishing, pp. 021002, 2009.
Koehl, WF., MH. Wong, C. Poblenz, B. Swenson, UK. Mishra, JS. Speck, and DD. Awschalom, "Current-induced spin polarization in gallium nitride", Applied Physics Letters, vol. 95, no. 7: AIP, pp. 072110, 2009.
2010
Kelchner, K. M., R. M. Farrell, Y-. Da Lin, P. Shan Hsu, M. T. Hardy, F. Wu, D. A. Cohen, H. Ohta, J. S. Speck, S. Nakamura, et al., "Continuous-wave operation of pure blue AlGaN-cladding-free nonpolar InGaN/GaN laser diodes", Applied Physics Express, vol. 3, no. 9: IOP Publishing, pp. 092103, 2010.
Young, E. C., C. S. Gallinat, A. E. Romanov, A. Tyagi, F. Wu, and J. S. Speck, "Critical thickness for onset of plastic relaxation in (1122) and (2021) semipolar AlGaN heterostructures", Applied physics express, vol. 3, no. 11: IOP Publishing, pp. 111002, 2010.
2011
Pfüller, C., O. Brandt, T. Flissikowski, HT. Grahn, T. Ive, JS. Speck, and SP. DenBaars, "Comparison of the spectral and temporal emission characteristics of homoepitaxial and heteroepitaxial ZnO nanowires", Applied Physics Letters, vol. 98, no. 11: AIP, pp. 113113, 2011.
Pimputkar, S., D. S. Kamber, J. S. Speck, and S. Nakamura, Controlling relative growth rates of different exposed crystallographic facets of a group-iii nitride crystal during the ammonothermal growth of a group-iii nitride crystal, 2011.
2012
Hurni, C. A., H. Kroemer, U. K. Mishra, and J. S. Speck, "Capacitance-voltage profiling on polar III-nitride heterostructures", Journal of Applied Physics, vol. 112, no. 8: AIP, pp. 083704, 2012.
Garrett, G. A., P. Rotella, H. Shen, M. Wraback, D. A. Haeger, R. B. Chung, N. Pfaff, E. C. Young, S. P. DenBaars, J. S. Speck, et al., "Carrier dynamics in active regions for ultraviolet optoelectronics grown on thick, relaxed AlGaN on semipolar bulk GaN", physica status solidi (b), vol. 249, no. 3: Wiley Online Library, pp. 507–510, 2012.
Lang, J. R., NG. Young, R. M. Farrell, Y-R. Wu, and JS. Speck, "Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells", Applied Physics Letters, vol. 101, no. 18: AIP, pp. 181105, 2012.

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