Publications

Found 119 results
Author Title Type [ Year(Desc)]
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2015
Kaun, S. W., F. Wu, and J. S. Speck, "β-(AlxGa1- x) 2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma-assisted molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 33, no. 4: AVS, pp. 041508, 2015.
2016
Oshima, Y., E. Ahmadi, S. C. Badescu, F. Wu, and J. S. Speck, "Composition determination of β-(Al x Ga1- x) 2O3 layers coherently grown on (010) β-Ga2O3 substrates by high-resolution X-ray diffraction", Applied Physics Express, vol. 9, no. 6: IOP Publishing, pp. 061102, 2016.
Kowsz, S. J., C. D. Pynn, F. Wu, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Designing optically pumped InGaN quantum wells with long wavelength emission for a phosphor-free device with polarized white-light emission", Gallium Nitride Materials and Devices XI, vol. 9748: International Society for Optics and Photonics, pp. 97481Z, 2016.
Kyle, E. C. H., S. W. Kaun, F. Wu, B. Bonef, and J. S. Speck, "High indium content homogenous InAlN layers grown by plasma-assisted molecular beam epitaxy", Journal of Crystal Growth, vol. 454: North-Holland, pp. 164–172, 2016.
Alhassan, A. I., R. M. Farrell, B. Saifaddin, A. Mughal, F. Wu, S. P. DenBaars, S. Nakamura, and J. S. Speck, "High luminous efficacy green light-emitting diodes with AlGaN cap layer", Optics express, vol. 24, no. 16: Optical Society of America, pp. 17868–17873, 2016.
Young, E. C., B. P. Yonkee, F. Wu, S. Ho Oh, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Hybrid tunnel junction contacts to III–nitride light-emitting diodes", Applied Physics Express, vol. 9, no. 2: IOP Publishing, pp. 022102, 2016.
2017
Bonef, B., R. Cramer, F. Wu, and J. S. Speck, "Correlated Transmission Electron Microscopy and Atom Probe Tomography study of Boron distribution in BGaN", Microscopy and Microanalysis, vol. 23, no. S1: Cambridge University Press, pp. 668–669, 2017.
Oshima, Y., E. Ahmadi, S. Kaun, F. Wu, and J. S. Speck, "Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy", Semiconductor Science and Technology, vol. 33, no. 1: IOP Publishing, pp. 015013, 2017.
Ahmadi, E., Y. Oshima, F. Wu, and J. S. Speck, "Schottky barrier height of Ni to β-(AlxGa1- x) 2O3 with different compositions grown by plasma-assisted molecular beam epitaxy", Semiconductor Science and Technology, vol. 32, no. 3: IOP Publishing, pp. 035004, 2017.
2018
Alhassan, A. I., N. G. Young, R. M. Farrell, C. Pynn, F. Wu, A. Y. Alyamani, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Development of high performance green c-plane III-nitride light-emitting diodes", Optics express, vol. 26, no. 5: Optical Society of America, pp. 5591–5601, 2018.
Saifaddin, B., C. J. Zollner, A. Almogbel, H. Foronda, F. Wu, A. Albadri, A. Al Yamani, M. Iza, S. Nakamura, S. P. DenBaars, et al., "Developments in AlGaN and UV-C LEDs grown on SiC", Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII, vol. 10554: International Society for Optics and Photonics, pp. 105541E, 2018.
Foronda, H. M., F. Wu, C. Zollner, M. Esmed Alif, B. Saifaddin, A. Almogbel, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers", Journal of Crystal Growth, vol. 483: North-Holland, pp. 134–139, 2018.
2019
Khoury, M., H. Li, H. Zhang, B. Bonef, M. S. Wong, F. Wu, D. Cohen, P. De Mierry, P. Vennéguès, J. S. Speck, et al., "Demonstration of Electrically Injected Semipolar Laser Diodes Grown on Low-Cost and Scalable Sapphire Substrates", ACS Applied Materials & Interfaces, vol. 11, pp. 47106-47111, 2019.
2020
SaifAddin, B. K., A. S. Almogbel, C. J. Zollner, F. Wu, B. Bonef, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "AlGaN Deep-Ultraviolet Light-Emitting Diodes Grown on SiC Substrates", ACS Photonics, 2020.
2021
Monavarian, M., J. Xu, M. Khoury, F. Wu, P. De Mierry, P. Vennéguès, M. A. Belkin, and J. S. Speck, "Defect Tolerance of Intersubband Transitions in Nonpolar $\mathrmGa\mathrmN/(\mathrmAl,\mathrmGa)\mathrmN$ Heterostructures: A Path toward Low-Cost and Scalable Mid- to Far-Infrared Optoelectronics", Phys. Rev. Appl., vol. 16, pp. 054040, Nov, 2021.
2022
Mauze, A., T. Itoh, Y. Zhang, E. Deagueros, F. Wu, and J. S. Speck, "Coherently strained (001) β-(AlxGa1−x)2O3 thin films on β-Ga2O3: Growth and compositional analysis", Journal of Applied Physics, vol. 132, 09, 2022.
Mukhopadhyay, P., I. Hatipoglu, Y. K. Frodason, J. B. Varley, M. S. Williams, D. A. Hunter, N. K. Gunasekar, P. R. Edwards, R. W. Martin, F. Wu, et al., "Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE", Applied Physics Letters, vol. 121, 09, 2022.
2023
Wong, M. S., A. Raj, H-M. Chang, V. Rienzi, F. Wu, J. J. Ewing, E. S. Trageser, S. Gee, N. C. Palmquist, P. Chan, et al., "Improved wall-plug efficiency of III-nitride tunnel junction micro-light-emitting diodes with AlGaN/GaN polarization charges", AIP Advances, vol. 13, 01, 2023.
Wu, F., J. Ewing, C. Lynsky, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Structure of V-defects in long wavelength GaN-based light emitting diodes", Journal of Applied Physics, vol. 133, 01, 2023.

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