Publications
Found 14 results
Author Title Type [ Year
] Filters: Author is Mishra, UK and First Letter Of Title is I [Clear All Filters]
, "Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 68, no. 11: AIP, pp. 1525–1527, 1996.
, "Improvement of GaN-based laser diode facets by FIB polishing", Electronics Letters, vol. 34, no. 13: IET, pp. 1315–1316, 1998.
, "Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Journal of crystal growth, vol. 233, no. 4: North-Holland, pp. 709–716, 2001.
, "Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy", Applied physics letters, vol. 80, no. 5: AIP, pp. 805–807, 2002.
, "Identification of carbon-related bandgap states in GaN grown by MOCVD", MRS Online Proceedings Library Archive, vol. 798: Cambridge University Press, 2003.
, "Impact of growth pressure on defects in GaN grown by metalorganic chemical vapor deposition", Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on: IEEE, pp. 42–48, 2003.
, "Influence of Growth Parameters on the Deep Level Spectrum in MBE-Grown n-GaN", MRS Online Proceedings Library Archive, vol. 798: Cambridge University Press, 2003.
, "Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition", Applied physics letters, vol. 84, no. 3: AIP, pp. 374–376, 2004.
, "Ion implantation for unalloyed ohmic contacts to AlGaN/GaN HEMTs", Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes' Late News Papers' volume]: IEEE, pp. 37–38, 2004.
, "Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon", Journal of Applied physics, vol. 98, no. 5: AIP, pp. 053704, 2005.
, "Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy", Applied physics letters, vol. 88, no. 8: AIP, pp. 082114, 2006.
, "Improved processing technology for GaN-capped deeply-recessed GaN HEMTs without surface passivation", Device Research Conference, 2006 64th: IEEE, pp. 101–102, 2006.
, "Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition", Journal of Applied Physics, vol. 102, no. 8: AIP, pp. 083546, 2007.
, "Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors", Applied Physics Letters, vol. 99, no. 22: AIP, pp. 223501, 2011.