Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors

TitleInfluence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors
Publication TypeJournal Article
Year of Publication2011
AuthorsŤapajna, M., SW. Kaun, MH. Wong, F. Gao, T. Palacios, UK. Mishra, JS. Speck, and M. Kuball
JournalApplied Physics Letters
Volume99
Pagination223501