Publications

Found 226 results
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2004
Hansen, PJ., L. Shen, Y. Wu, A. Stonas, Y. Terao, S. Heikman, D. Buttari, TR. Taylor, SP. DenBaars, UK. Mishra, et al., "Al Ga N/ Ga N metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 22, no. 5: AVS, pp. 2479–2485, 2004.
Waltereit, P., H. Sato, C. Poblenz, DS. Green, JS. Brown, M. McLaurin, T. Katona, SP. DenBaars, JS. Speck, J-H. Liang, et al., "Blue GaN-based light-emitting diodes grown by molecular-beam epitaxy with external quantum efficiency greater than 1.5%", Applied physics letters, vol. 84, no. 15: AIP, pp. 2748–2750, 2004.
Katona, TM., MD. Craven, JS. Speck, and SP. DenBaars, "Cathodoluminescence study of deep ultraviolet quantum wells grown on maskless laterally epitaxial overgrown AlGaN", Applied physics letters, vol. 85, no. 8: AIP, pp. 1350–1352, 2004.
Yu, H., L. McCarthy, H. Xing, P. Waltereit, L. Shen, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing", Applied physics letters, vol. 85, no. 22: AIP, pp. 5254–5256, 2004.
Armstrong, A., AR. Arehart, B. Moran, SP. DenBaars, UK. Mishra, JS. Speck, and SA. Ringel, "Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition", Applied physics letters, vol. 84, no. 3: AIP, pp. 374–376, 2004.
Koida, T., SF. Chichibu, T. Sota, MD. Craven, BA. Haskell, JS. Speck, SP. DenBaars, and S. Nakamura, "Improved quantum efficiency in nonpolar (112Ø0) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth", Applied physics letters, vol. 84, no. 19: AIP, pp. 3768–3770, 2004.
Yu, H., L. McCarthy, S. Rajan, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Ion implantation for unalloyed ohmic contacts to AlGaN/GaN HEMTs", Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes' Late News Papers' volume]: IEEE, pp. 37–38, 2004.
Katona, TM., P. Cantu, S. Keller, Y. Wu, JS. Speck, and SP. DenBaars, "Maskless lateral epitaxial overgrowth of high-aluminum-content Al x Ga 1- x N", Applied physics letters, vol. 84, no. 24: AIP, pp. 5025–5027, 2004.
Craven, MD., F. Wu, A. Chakraborty, B. Imer, UK. Mishra, SP. DenBaars, and JS. Speck, "Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition", Applied physics letters, vol. 84, no. 8: AIP, pp. 1281–1283, 2004.
P Alejandro, C., S. Keller, T. Li, UK. Mishra, JS. Speck, and SP. DenBaars, "MOCVD growth of AlGaN films for solar blind photodetectors", physica status solidi (a), vol. 201, no. 9: Wiley Online Library, pp. 2185–2189, 2004.
Chakraborty, A., H. Xing, MD. Craven, S. Keller, T. Mates, JS. Speck, SP. DenBaars, and UK. Mishra, "Nonpolar a-plane p-type GaN and p-n Junction Diodes", Journal of applied physics, vol. 96, no. 8: AIP, pp. 4494–4499, 2004.
Chakraborty, A., BA. Haskell, S. Keller, JS. Speck, SP. DenBaars, S. Nakamura, and UK. Mishra, "Nonpolar InGaN/ GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak", Applied Physics Letters, vol. 85, no. 22: AIP, pp. 5143–5145, 2004.
Moran, B., F. Wu, AE. Romanov, UK. Mishra, SP. DenBaars, and JS. Speck, "Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer", Journal of Crystal Growth, vol. 273, no. 1-2: North-Holland, pp. 38–47, 2004.
Craven, MD., P. Waltereit, JS. Speck, and SP. DenBaars, "Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells", Applied physics letters, vol. 84, no. 4: AIP, pp. 496–498, 2004.
2003
Yamamoto, N., H. Itoh, V. Grillo, SF. Chichibu, S. Keller, JS. Speck, SP. DenBaars, UK. Mishra, S. Nakamura, and G. Salviati, "Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope", Journal of applied physics, vol. 94, no. 7: AIP, pp. 4315–4319, 2003.
Yamamoto, N., H. Itoh, V. Grillo, SF. Chichibu, S. Keller, JS. Speck, SP. DenBaars, UK. Mishra, S. Nakamura, and G. Salviati, "Cathodoluminescence characterization of dislocations in gallium nitride using a transmission", Info: Postprints, UC Santa Barbara, 2003.
Roder, C., H. Heinke, D. Hommel, TM. Katona, JS. Speck, and SP. DenBaars, "Crystallographic wing tilt in laterally overgrown GaN", Journal of Physics D: Applied Physics, vol. 36, no. 10A: IOP Publishing, pp. A188, 2003.
Haskell, BA., F. Wu, MD. Craven, S. Matsuda, PT. Fini, T. Fujii, K. Fujito, SP. DenBaars, JS. Speck, and S. Nakamura, "Defect reduction in (1120) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy", Applied physics letters, vol. 83, no. 4: AIP, pp. 644–646, 2003.
Keller, S., P. Waltereit, P. Cantu, UK. Mishra, JS. Speck, and SP. DenBaars, "Electrical and structural properties of AlGaN/AlGaN superlattice structures grown by metal-organic chemical vapor deposition", Optical Materials, vol. 23, no. 1-2: North-Holland, pp. 187–195, 2003.
DenBaars, SP., T. Katona, P. Cantu, A. Hanlon, S. Keller, M. Schmidt, T. Margalith, M. Pattisson, C. Moe, J. Speck, et al., "GaN based high brightness LEDs and UV LEDs", Electron Devices Meeting, 2003. IEDM'03 Technical Digest. IEEE International: IEEE, pp. 16–1, 2003.
Katona, TM., T. Margalith, C. Moe, MC. Schmidt, S. Nakamura, JS. Speck, and SP. DenBaars, "Growth and fabrication of short-wavelength UV LEDs [5187-31]", PROCEEDINGS-SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING: International Society for Optical Engineering; 1999, pp. 250–259, 2003.
Armstrong, A., AR. Arehart, SA. Ringel, B. Moran, SP. DenBaars, UK. Mishra, and JS. Speck, "Identification of carbon-related bandgap states in GaN grown by MOCVD", MRS Online Proceedings Library Archive, vol. 798: Cambridge University Press, 2003.
Armstrong, A., AR. Arehart, B. Moran, SP. DenBaars, U. Mishra, JS. Speck, and SA. Ringel, "Impact of Growth Pressure on Defects in GaN Grown", Proceedings of the IEEE... International Symposium on Compound Semiconductors, vol. 30: IEEE, pp. 42, 2003.

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