Publications

Found 367 results
Author Title Type [ Year(Asc)]
Filters: Author is Nakamura, Shuji  [Clear All Filters]
2005
Hashimoto, T., K. Fujino, F. Wu, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura, "GaN and Related Alloys", MRS Symposia, vol. 831, Pittsburgh, Materials Research Society, 2005.
Hashimoto, T., K. Fujito, K. Samonji, J. S. Speck, and S. Nakamura, "Growth of AlN by the chemical vapor reaction process", Japanese journal of applied physics, vol. 44, no. 2R: IOP Publishing, pp. 869, 2005.
Hashimoto, T., K. Fujito, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura, "Growth of gallium nitride via fluid transport in supercritical ammonia", Journal of Crystal Growth, vol. 275, no. 1-2: North-Holland, pp. e525–e530, 2005.
Haskell, B. A., A. Chakraborty, F. Wu, H. Sasano, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy", Journal of electronic materials, vol. 34, no. 4: Springer-Verlag, pp. 357–360, 2005.
Chakraborty, A., T. J. Baker, B. A. Haskell, F. Wu, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, "Milliwatt power blue InGaN/GaN light-emitting diodes on semipolar GaN templates", Japanese journal of applied physics, vol. 44, no. 7L: IOP Publishing, pp. L945, 2005.
Masui, H., A. Chakraborty, B. A. Haskell, U. K. Mishra, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Polarized light emission from nonpolar InGaN light-emitting diodes grown on a bulk m-plane GaN substrate", Japanese journal of applied physics, vol. 44, no. 10L: IOP Publishing, pp. L1329, 2005.
Ghosh, S., P. Misra, HT. Grahn, B. Imer, S. Nakamura, SP. DenBaars, Speck, and JS, Polarized photoreflectance spectroscopy of strained A-plane GaN films on R-plane sapphire: AIP, 2005.
Chakraborty, A., S. Keller, C. Meier, B. A. Haskell, S. Keller, P. Waltereit, S. P. DenBaars, S. Nakamura, J. S. Speck, and U. K. Mishra, "Properties of nonpolar a-plane InGaN/ GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN", Applied Physics Letters, vol. 86, no. 3: AIP, pp. 031901, 2005.
Sharma, R., M. P Pattison, T. J. Baker, B. A. Haskell, R. M. Farrell, H. Masui, F. Wu, S. P. DenBaars, J. S. Speck, and S. Nakamura, "A semipolar (10-1-3) InGaN/GaN green light emitting diode", MRS Online Proceedings Library Archive, vol. 892: Cambridge University Press, 2005.
Hashimoto, T., K. Fujito, F. Wu, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura, "Structural characterization of thick GaN films grown on free-standing GaN seeds by the ammonothermal method using basic ammonia", Japanese journal of applied physics, vol. 44, no. 6L: IOP Publishing, pp. L797, 2005.
2004
Hashimoto, T., K. Fujito, F. Wu, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura, "Ammonothermal growth of GaN utilizing negative temperature dependence of solubility in basic ammonia", MRS Online Proceedings Library Archive, vol. 831: Cambridge University Press, 2004.
Katona, T. M., T. Margalith, C. Moe, M. C. Schmidt, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Growth and fabrication of short-wavelength UV LEDs", Third International Conference on Solid State Lighting, vol. 5187: International Society for Optics and Photonics, pp. 250–260, 2004.
Kaeding, J. F., Y. Wu, T. Fujii, R. Sharma, P. T. Fini, J. S. Speck, and S. Nakamura, "Growth and laser-assisted liftoff of low dislocation density AlN thin films for deep-UV light-emitting diodes", Journal of crystal growth, vol. 272, no. 1-4: North-Holland, pp. 257–263, 2004.
Fujito, K., T. Hashimoto, K. Samonji, J. S. Speck, and S. Nakamura, "Growth of A1N by the chemical vapor reaction process and its application to lateral overgrowth on patterned sapphire substrates", Journal of crystal growth, vol. 272, no. 1-4: North-Holland, pp. 370–376, 2004.
2003
Haskell, BA., F. Wu, MD. Craven, S. Matsuda, PT. Fini, T. Fujii, K. Fujito, SP. DenBaars, JS. Speck, and S. Nakamura, "Defect reduction in (1120) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy", Applied physics letters, vol. 83, no. 4: AIP, pp. 644–646, 2003.
Haskell, BA., F. Wu, S. Matsuda, MD. Craven, PT. Fini, SP. DenBaars, JS. Speck, and S. Nakamura, "Structural and morphological characteristics of planar (1120) a-plane gallium nitride grown by hydride vapor phase epitaxy", Applied Physics Letters, vol. 83, no. 8: AIP, pp. 1554–1556, 2003.
1998
Asamizu, H., M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "r here has been significant development of c-plane", MRS Internet J. Nitride Semicond. Res, vol. 3, pp. 15, 1998.

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