Publications

Found 367 results
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2018
Uždavinys, T. K., D. L. Becerra, M. D. Mensi, R. Ivanov, S. Nakamura, S. P. DenBaars, J. S. Speck, and S. Marcinkevičius, "Impact of alloy composition and well width fluctuations on linewidth broadening and carrier lifetimes in semipolar InGaN quantum wells (Conference Presentation)", Gallium Nitride Materials and Devices XIII, vol. 10532: International Society for Optics and Photonics, pp. 105320P, 2018.
Foronda, H. M., F. Wu, C. Zollner, M. Esmed Alif, B. Saifaddin, A. Almogbel, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers", Journal of Crystal Growth, vol. 483: North-Holland, pp. 134–139, 2018.
Mounir, C., I. L. Koslow, T. Wernicke, M. Kneissl, L. Y. Kuritzky, N. L. Adamski, S. Ho Oh, C. D. Pynn, S. P. DenBaars, S. Nakamura, et al., "On the optical polarization properties of semipolar ( 20 2 ¯ 1 ) and ( 20 2 ¯ 1 ¯) InGaN/GaN quantum wells", Journal of Applied Physics, vol. 123, no. 8: AIP Publishing, pp. 085705, 2018.
Alhassan, A. I., E. C. Young, A. Y. Alyamani, A. Albadri, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Reduced-droop green III–nitride light-emitting diodes utilizing GaN tunnel junction", Applied Physics Express, vol. 11, no. 4: IOP Publishing, pp. 042101, 2018.
Khoury, M., H. Li, B. Bonef, L. Y. Kuritzky, A. J. Mughal, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Semipolar GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations", Applied Physics Express, vol. 11, no. 3: IOP Publishing, pp. 036501, 2018.
Lee, C., C. Shen, C. Cozzan, R. M. Farrell, S. Nakamura, A. Y. Alyamani, B. S. Ooi, J. E. Bowers, S. P. DenBaars, and J. S. Speck, "Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems", Gallium Nitride Materials and Devices XIII, vol. 10532: International Society for Optics and Photonics, pp. 105321N, 2018.
Shen, C., T. Khee Ng, C. Lee, S. Nakamura, J. S. Speck, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications", Optics express, vol. 26, no. 6: Optical Society of America, pp. A219–A226, 2018.
Jr, R. M. Farrell, T. J. Baker, A. Chakraborty, B. A. Haskell, M. P. Pattison, R. Sharma, U. K. Mishra, S. P. DenBaars, J. S. Speck, S. Nakamura, et al., TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga, Al, In, B) N THIN FILMS, HETEROSTRUCTURES, AND DEVICES, 2018.
2017
Khoury, M., H. Li, L. Y. Kuritzky, A. J. Mughal, P. DeMierry, S. Nakamura, J. S. Speck, and S. P. DenBaars, "444 nm InGaN light emitting diodes on low-defect-density GaN templates on patterned sapphire", Applied Physics Express, vol. 10, no. 10: IOP Publishing, pp. 106501, 2017.
Mensi, M., R. Ivanov, T. K. Uz?davinys, K. M. Kelchner, S. Nakamura, S. P. DenBaars, J. S. Speck, and S. Marcinkevic?ius, "Direct measurement of nanoscale lateral carrier diffusion: toward scanning diffusion microscopy", ACS Photonics: American Chemical Society, 2017.
Li, H., M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. A. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, et al., "Efficient Semipolar (11–22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11–22) GaN/Sapphire Templates", ACS applied materials & interfaces, vol. 9, no. 41: American Chemical Society, pp. 36417–36422, 2017.
Lee, C., C. Shen, C. Cozzan, R. M. Farrell, J. S. Speck, S. Nakamura, B. S. Ooi, and S. P. DenBaars, "Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors", Optics express, vol. 25, no. 15: Optical Society of America, pp. 17480–17487, 2017.
Yonkee, B. P., E. C. Young, S. P. DenBaars, J. S. Speck, and S. Nakamura, "High reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum", Semiconductor Science and Technology, vol. 33, no. 1: IOP Publishing, pp. 015015, 2017.
Kuritzky, L. Y., A. C. Espenlaub, B. P. Yonkee, C. D. Pynn, S. P. DenBaars, S. Nakamura, C. Weisbuch, and J. S. Speck, "High wall-plug efficiency blue III-nitride LEDs designed for low current density operation", Optics express, vol. 25, no. 24: Optical Society of America, pp. 30696–30707, 2017.
Hwang, D., N. G. Young, B. Yonkee, B. K. Saifaddin, S. P. DenBaars, J. S. Speck, and S. Nakamura, Iii-v micro-led arrays and methods for preparing the same, 2017.
Uždavinys, T. K., D. L. Becerra, R. Ivanov, S. P. DenBaars, S. Nakamura, J. S. Speck, and S. Marcinkevičius, "Influence of well width fluctuations on recombination properties in semipolar InGaN quantum wells studied by time-and spatially-resolved near-field photoluminescence", Optical Materials Express, vol. 7, no. 9: Optical Society of America, pp. 3116–3123, 2017.
Shen, C., C. Lee, T. Khee Ng, J. S. Speck, S. Nakamura, S. P. DenBaars, and B. S. Ooi, "Integrated photonic platform based on semipolar InGaN/GaN multiple section laser diodes", Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2017 Conference on: IEEE, pp. 1–2, 2017.
Mughal, A. J., B. Carberry, S. Ho Oh, A. Myzaferi, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Optoelectronic properties of doped hydrothermal ZnO thin films", physica status solidi (a), vol. 214, no. 6, 2017.
Iso, K., H. Yamada, M. Saito, A. Hirai, S. P. DenBaars, J. S. Speck, and S. Nakamura, Planar nonpolar group iii-nitride films grown on miscut substrates, 2017.
Mughal, A. J., E. C. Young, A. I. Alhassan, J. Back, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes and InGaN LEDs", Applied Physics Express, vol. 10, no. 12: IOP Publishing, pp. 121006, 2017.
Ivanov, R., S. Marcinkevičius, M. D. Mensi, O. Martinez, L. Y. Kuritzky, D. J. Myers, S. Nakamura, and J. S. Speck, "Polarization-Resolved Near-Field Spectroscopy of Localized States in m-Plane In x Ga 1- x N/Ga N Quantum Wells", Physical Review Applied, vol. 7, no. 6: American Physical Society, pp. 064033, 2017.
Ivanov, R., S. Marcinkevičius, T. K. Uždavinys, L. Y. Kuritzky, S. Nakamura, and J. S. Speck, "Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells", Applied Physics Letters, vol. 110, no. 3: AIP Publishing, pp. 031109, 2017.
Shen, C., T. Khee Ng, C. Lee, J. T. Leonard, S. Nakamura, J. S. Speck, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications", Gallium Nitride Materials and Devices XII, vol. 10104: International Society for Optics and Photonics, pp. 101041U, 2017.
Mughal, A. J., B. Carberry, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Structural and Optical Properties of Group III Doped Hydrothermal ZnO Thin Films", Journal of Electronic Materials, vol. 46, no. 3: Springer US, pp. 1821–1825, 2017.
Holder, C. O., D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser, 2017.

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