High reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum

TitleHigh reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum
Publication TypeJournal Article
Year of Publication2017
AuthorsYonkee, B. P., E. C. Young, S. P. DenBaars, J. S. Speck, and S. Nakamura
JournalSemiconductor Science and Technology
Volume33
Pagination015015