Publications

Found 367 results
Author Title Type [ Year(Desc)]
Filters: Author is Nakamura, Shuji  [Clear All Filters]
2017
Iso, K., H. Yamada, M. Saito, A. Hirai, S. P. DenBaars, J. S. Speck, and S. Nakamura, Planar nonpolar group iii-nitride films grown on miscut substrates, 2017.
Mughal, A. J., E. C. Young, A. I. Alhassan, J. Back, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes and InGaN LEDs", Applied Physics Express, vol. 10, no. 12: IOP Publishing, pp. 121006, 2017.
Ivanov, R., S. Marcinkevičius, M. D. Mensi, O. Martinez, L. Y. Kuritzky, D. J. Myers, S. Nakamura, and J. S. Speck, "Polarization-Resolved Near-Field Spectroscopy of Localized States in m-Plane In x Ga 1- x N/Ga N Quantum Wells", Physical Review Applied, vol. 7, no. 6: American Physical Society, pp. 064033, 2017.
Ivanov, R., S. Marcinkevičius, T. K. Uždavinys, L. Y. Kuritzky, S. Nakamura, and J. S. Speck, "Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells", Applied Physics Letters, vol. 110, no. 3: AIP Publishing, pp. 031109, 2017.
Shen, C., T. Khee Ng, C. Lee, J. T. Leonard, S. Nakamura, J. S. Speck, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications", Gallium Nitride Materials and Devices XII, vol. 10104: International Society for Optics and Photonics, pp. 101041U, 2017.
Mughal, A. J., B. Carberry, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Structural and Optical Properties of Group III Doped Hydrothermal ZnO Thin Films", Journal of Electronic Materials, vol. 46, no. 3: Springer US, pp. 1821–1825, 2017.
Holder, C. O., D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser, 2017.
Lee, C., J. S. Speck, S. Nakamura, S. P. DenBaars, C. Shen, OOI. F. R. O. M. KAUST, A. Y. Alyamani, and MUNIR. M. E. L. - D. E. S. O. U. KACST, "Turbocharging LiFi with semi-polar lasers", III-Vs get out and about, pp. 60, 2017.
Kowsz, S. J., E. C. Young, B. P. Yonkee, C. D. Pynn, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells", Optics express, vol. 25, no. 4: Optical Society of America, pp. 3841–3849, 2017.
2018
Espenlaub, A. C., A. I. Alhassan, S. Nakamura, C. Weisbuch, and J. S. Speck, "Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes", Applied Physics Letters, vol. 112, no. 14: AIP Publishing, pp. 141106, 2018.
Alhassan, A. I., N. G. Young, R. M. Farrell, C. Pynn, F. Wu, A. Y. Alyamani, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Development of high performance green c-plane III-nitride light-emitting diodes", Optics express, vol. 26, no. 5: Optical Society of America, pp. 5591–5601, 2018.
Saifaddin, B., C. J. Zollner, A. Almogbel, H. Foronda, F. Wu, A. Albadri, A. Al Yamani, M. Iza, S. Nakamura, S. P. DenBaars, et al., "Developments in AlGaN and UV-C LEDs grown on SiC", Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII, vol. 10554: International Society for Optics and Photonics, pp. 105541E, 2018.
Uždavinys, T. K., D. L. Becerra, M. D. Mensi, R. Ivanov, S. Nakamura, S. P. DenBaars, J. S. Speck, and S. Marcinkevičius, "Impact of alloy composition and well width fluctuations on linewidth broadening and carrier lifetimes in semipolar InGaN quantum wells (Conference Presentation)", Gallium Nitride Materials and Devices XIII, vol. 10532: International Society for Optics and Photonics, pp. 105320P, 2018.
Foronda, H. M., F. Wu, C. Zollner, M. Esmed Alif, B. Saifaddin, A. Almogbel, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers", Journal of Crystal Growth, vol. 483: North-Holland, pp. 134–139, 2018.
Mounir, C., I. L. Koslow, T. Wernicke, M. Kneissl, L. Y. Kuritzky, N. L. Adamski, S. Ho Oh, C. D. Pynn, S. P. DenBaars, S. Nakamura, et al., "On the optical polarization properties of semipolar ( 20 2 ¯ 1 ) and ( 20 2 ¯ 1 ¯) InGaN/GaN quantum wells", Journal of Applied Physics, vol. 123, no. 8: AIP Publishing, pp. 085705, 2018.
Alhassan, A. I., E. C. Young, A. Y. Alyamani, A. Albadri, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Reduced-droop green III–nitride light-emitting diodes utilizing GaN tunnel junction", Applied Physics Express, vol. 11, no. 4: IOP Publishing, pp. 042101, 2018.
Khoury, M., H. Li, B. Bonef, L. Y. Kuritzky, A. J. Mughal, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Semipolar GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations", Applied Physics Express, vol. 11, no. 3: IOP Publishing, pp. 036501, 2018.
Lee, C., C. Shen, C. Cozzan, R. M. Farrell, S. Nakamura, A. Y. Alyamani, B. S. Ooi, J. E. Bowers, S. P. DenBaars, and J. S. Speck, "Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems", Gallium Nitride Materials and Devices XIII, vol. 10532: International Society for Optics and Photonics, pp. 105321N, 2018.
Shen, C., T. Khee Ng, C. Lee, S. Nakamura, J. S. Speck, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications", Optics express, vol. 26, no. 6: Optical Society of America, pp. A219–A226, 2018.
Jr, R. M. Farrell, T. J. Baker, A. Chakraborty, B. A. Haskell, M. P. Pattison, R. Sharma, U. K. Mishra, S. P. DenBaars, J. S. Speck, S. Nakamura, et al., TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga, Al, In, B) N THIN FILMS, HETEROSTRUCTURES, AND DEVICES, 2018.
2019
Khoury, M., H. Li, H. Zhang, B. Bonef, M. S. Wong, F. Wu, D. Cohen, P. De Mierry, P. Vennéguès, J. S. Speck, et al., "Demonstration of Electrically Injected Semipolar Laser Diodes Grown on Low-Cost and Scalable Sapphire Substrates", ACS Applied Materials & Interfaces, vol. 11, pp. 47106-47111, 2019.
Myers, D. J., K. Gel, A. I. Alhassan, L. Martinelli, J. Peretti, S. Nakamura, C. Weisbuch, and J. S. Speck, "Direct measurement of hot-carrier generation in a semiconductor barrier heterostructure: Identification of the dominant mechanism for thermal droop", Phys. Rev. B, vol. 100, pp. 125303, Sep, 2019.
2020
SaifAddin, B. K., A. S. Almogbel, C. J. Zollner, F. Wu, B. Bonef, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "AlGaN Deep-Ultraviolet Light-Emitting Diodes Grown on SiC Substrates", ACS Photonics, 2020.
Lynsky, C., A. I. Alhassan, G. Lheureux, B. Bonef, S. P. DenBaars, S. Nakamura, Y-R. Wu, C. Weisbuch, and J. S. Speck, "Barriers to carrier transport in multiple quantum well nitride-based $c$-plane green light emitting diodes", Phys. Rev. Materials, vol. 4, pp. 054604, May, 2020.
Aleksiejūnas, R., K. Nomeika, O. Kravcov, S. Nargelas, L. Kuritzky, C. Lynsky, S. Nakamura, C. Weisbuch, and J. S. Speck, "Impact of Alloy-Disorder-Induced Localization on Hole Diffusion in Highly Excited c-Plane and m-Plane InGaN Quantum Wells", Phys. Rev. Applied, vol. 14, pp. 054043, Nov, 2020.

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