Publications
] , "Structural and Optical Properties of Group III Doped Hydrothermal ZnO Thin Films", Journal of Electronic Materials, vol. 46, no. 3: Springer US, pp. 1821–1825, 2017.
, Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser, 2017.
, "Turbocharging LiFi with semi-polar lasers", III-Vs get out and about, pp. 60, 2017.
, "Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells", Optics express, vol. 25, no. 4: Optical Society of America, pp. 3841–3849, 2017.
, "Vertical transport in isotype InAlN/GaN dipole induced diodes grown by molecular beam epitaxy", Journal of Applied Physics, vol. 121, no. 20: AIP Publishing, pp. 205702, 2017.
, "Vertical transport through AlGaN barriers in heterostructures grown by ammonia molecular beam epitaxy and metalorganic chemical vapor deposition", Semiconductor Science and Technology, vol. 32, no. 2: IOP Publishing, pp. 025010, 2017.
, "Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes", Applied Physics Letters, vol. 112, no. 14: AIP Publishing, pp. 141106, 2018.
, "Carrier localization induced by alloy disorder in nitride devices: theory and experiments (Conference Presentation)", Gallium Nitride Materials and Devices XIII, vol. 10532: International Society for Optics and Photonics, pp. 105320S, 2018.
, "Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 123, no. 16: AIP Publishing, pp. 161410, 2018.
, "Development of high performance green c-plane III-nitride light-emitting diodes", Optics express, vol. 26, no. 5: Optical Society of America, pp. 5591–5601, 2018.
, "Erratum:Nanometer scale composition study of MBE grown BGaN performed by atom probe tomography", Journal of Applied Physics, vol. 123, no. 1: AIP Publishing, pp. 019901, 2018.
, "Experimental evidence of nanometer-scale localized recombination due to random In fluctuations in InGaN/GaN quantum wells (Conference Presentation)", Physics and Simulation of Optoelectronic Devices XXVI, vol. 10526: International Society for Optics and Photonics, pp. 105261N, 2018.
, "Growth of N-polar GaN by ammonia molecular beam epitaxy", Journal of Crystal Growth, vol. 481: North-Holland, pp. 65–70, 2018.
, "Impact of alloy composition and well width fluctuations on linewidth broadening and carrier lifetimes in semipolar InGaN quantum wells (Conference Presentation)", Gallium Nitride Materials and Devices XIII, vol. 10532: International Society for Optics and Photonics, pp. 105320P, 2018.
, "Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers", Journal of Crystal Growth, vol. 483: North-Holland, pp. 134–139, 2018.
, "n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy", Semiconductor Science and Technology, vol. 33, no. 4: IOP Publishing, pp. 045001, 2018.
, "Progress in beta-gallium-oxide materials and devices (Conference Presentation)", Oxide-based Materials and Devices IX, vol. 10533: International Society for Optics and Photonics, pp. 1053307, 2018.
, "Reduced-droop green III–nitride light-emitting diodes utilizing GaN tunnel junction", Applied Physics Express, vol. 11, no. 4: IOP Publishing, pp. 042101, 2018.
, "Semipolar GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations", Applied Physics Express, vol. 11, no. 3: IOP Publishing, pp. 036501, 2018.
, "Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems", Gallium Nitride Materials and Devices XIII, vol. 10532: International Society for Optics and Photonics, pp. 105321N, 2018.
, "Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications", Optics express, vol. 26, no. 6: Optical Society of America, pp. A219–A226, 2018.