Publications

Found 673 results
Author Title Type [ Year(Desc)]
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2006
Moe, C. G., Y. Wu, J. Piprek, S. Keller, J. S. Speck, S. P. DenBaars, and D. Emerson, "AlGaN/AlN distributed bragg reflectors for deep ultraviolet wavelengths", physica status solidi (a), vol. 203, no. 8: Wiley Online Library, pp. 1915–1919, 2006.
Fehlberg, T. B., G. A. Umana-Membreno, B. D. Nener, G. Parish, C. S. Gallinat, G. Koblmüller, S. Bernardis, and J. S. Speck, "Characterisation of Electron Transport in MBE Grown Indium Nitride", Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on: IEEE, pp. 11–14, 2006.
Fehlberg, T. B., G. A. Umana-Membreno, B. D. Nener, G. Parish, C. S. Gallinat, G. Koblmüller, S. Rajan, S. Bernardis, and J. S. Speck, "Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy", Japanese journal of applied physics, vol. 45, no. 10L: IOP Publishing, pp. L1090, 2006.
Baker, T. J., B. A. Haskell, F. Wu, J. S. Speck, and S. Nakamura, "Characterization of planar semipolar gallium nitride films on sapphire substrates", Japanese Journal of Applied Physics, vol. 45, no. 2L: IOP Publishing, pp. L154, 2006.
Moe, C. G., Y. Wu, S. Keller, J. S. Speck, S. P. DenBaars, and D. Emerson, "Crystal quality and growth evolution of aluminum nitride on silicon carbide", physica status solidi (a), vol. 203, no. 7: Wiley Online Library, pp. 1708–1711, 2006.
Kamber, D. S., Y. Wu, B. A. Haskell, S. Newman, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy", Journal of crystal growth, vol. 297, no. 2: Elsevier, pp. 321–325, 2006.
Keller, S., N. Fichtenbaum, F. Wu, G. Lee, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H–SiC", Japanese journal of applied physics, vol. 45, no. 3L: IOP Publishing, pp. L322, 2006.
Waki, I., M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Etching of Ga-face and N-face GaN by inductively coupled plasma", Japanese journal of applied physics, vol. 45, no. 2R: IOP Publishing, pp. 720, 2006.
Chern, G. D., E. D. Readinger, H. Shen, M. Wraback, C. S. Gallinat, G. Koblmüller, and J. S. Speck, "Excitation wavelength dependence of terahertz emission from InN and InAs", Applied physics letters, vol. 89, no. 14: AIP, pp. 141115, 2006.
Brown, J. S., G. Koblmüller, F. Wu, R. Averbeck, H. Riechert, and J. S. Speck, "Ga adsorbate on (0001) GaN: In situ characterization with quadrupole mass spectrometry and reflection high-energy electron diffraction", Journal of applied physics, vol. 99, no. 7: AIP, pp. 074902, 2006.
Imer, B. M., F. Wu, S. P. DenBaars, and J. S. Speck, "Improved quality (11 2\= 0) a-plane GaN with sidewall lateral epitaxial overgrowth", Applied physics letters, vol. 88, no. 6: AIP, pp. 061908, 2006.
Brown, J. S., G. Koblmüller, R. Averbeck, H. Riechert, and J. S. Speck, "In situ characterization of GaN quantum dot growth with reflection high-energy electron diffraction and line-of-sight mass spectrometry", Journal of applied physics, vol. 99, no. 12: AIP, pp. 124909, 2006.
Wraback, M., G. D. Chern, E. D. Readinger, P. H. Shen, G. Koblmueller, C. S. Gallinat, J. S. Speck, and W. J. Schaff, Indium Nitride: A New Material for High Efficiency, Compact, 1550NM Laser-Based Terahertz Sources in Explosives Detection and Concealed Weapons Imaging: DTIC Document, 2006.
Gallinat, C. S., G. Koblmüller, J. S. Brown, S. Bernardis, J. S. Speck, G. D. Chern, E. D. Readinger, H. Shen, and M. Wraback, "In-polar InN grown by plasma-assisted molecular beam epitaxy", Applied physics letters, vol. 89, no. 3: AIP, pp. 032109, 2006.
Chakraborty, A., B. A. Haskell, H. Masui, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, "Nonpolar m-plane blue-light-emitting diode lamps with output power of 23.5 mW under pulsed operation", Japanese journal of applied physics, vol. 45, no. 2R: IOP Publishing, pp. 739, 2006.
Ghosh, S., P. Misra, H. T. Grahn, B. Imer, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Optical polarization anisotropy in strained A-plane GaN films on R-plane sapphire", physica status solidi (b), vol. 243, no. 7: Wiley Online Library, pp. 1441–1445, 2006.
Brown, J. S., P. M. Petroff, F. Wu, and J. S. Speck, "Optical properties of GaN/AlN (0001) quantum dots grown by plasma-assisted molecular beam epitaxy", Japanese journal of applied physics, vol. 45, no. 7L: IOP Publishing, pp. L669, 2006.
Chichibu, S. F., A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, et al., "Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors", Nature materials, vol. 5, no. 10: Nature Publishing Group, pp. 810, 2006.
Hashimoto, T., K. Fujito, R. Sharma, E. R. Letts, P. T. Fini, J. S. Speck, and S. Nakamura, "Phase selection of microcrystalline GaN synthesized in supercritical ammonia", Journal of crystal growth, vol. 291, no. 1: Elsevier, pp. 100–106, 2006.
Haskell, B. A., C. G. Van de Walle, J. S. Speck, and S. Nakamura, PI: Dr. Paul T. Fini, 2006.
Misra, P., U. Behn, O. Brandt, H. T. Grahn, B. Imer, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy", Applied physics letters, vol. 88, no. 16: AIP, pp. 161920, 2006.
Brown, J. S., G. Koblmüller, R. Averbeck, H. Riechert, and J. S. Speck, "Quadrupole mass spectrometry desorption analysis of Ga adsorbate on AlN (0001)", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 24, no. 6: AVS, pp. 1979–1984, 2006.
Imer, B., F. Wu, M. D. Craven, J. S. Speck, and S. P. DenBaars, "Stability of (1100) m-Plane GaN Films Grown by Metalorganic Chemical Vapor Deposition", Japanese journal of applied physics, vol. 45, no. 11R: IOP Publishing, pp. 8644, 2006.
Chakraborty, A., K. Choong Kim, F. Wu, B. A. Haskell, S. Keller, J. S. Speck, S. Nakamura, S. P. DenBaars, and U. K. Mishra, "Structural and electroluminescence characteristics of nonpolar light-emitting diodes fabricated on lateral epitaxially overgrown a-Plane GaN", Japanese journal of applied physics, vol. 45, no. 11R: IOP Publishing, pp. 8659, 2006.
Dora, Y., S. Han, D. Klenov, P. J. Hansen, K-soo. No, U. K. Mishra, S. Stemmer, and J. S. Speck, "ZrO 2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN/ GaN transistors", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 24, no. 2: AVS, pp. 575–581, 2006.

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