Publications

Found 56 results
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Filters: Author is Speck, James S and First Letter Of Title is P  [Clear All Filters]
2018
Speck, J. S., "Progress in beta-gallium-oxide materials and devices (Conference Presentation)", Oxide-based Materials and Devices IX, vol. 10533: International Society for Optics and Photonics, pp. 1053307, 2018.
2017
Iso, K., H. Yamada, M. Saito, A. Hirai, S. P. DenBaars, J. S. Speck, and S. Nakamura, Planar nonpolar group iii-nitride films grown on miscut substrates, 2017.
Mughal, A. J., E. C. Young, A. I. Alhassan, J. Back, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes and InGaN LEDs", Applied Physics Express, vol. 10, no. 12: IOP Publishing, pp. 121006, 2017.
Ivanov, R., S. Marcinkevičius, M. D. Mensi, O. Martinez, L. Y. Kuritzky, D. J. Myers, S. Nakamura, and J. S. Speck, "Polarization-Resolved Near-Field Spectroscopy of Localized States in m-Plane In x Ga 1- x N/Ga N Quantum Wells", Physical Review Applied, vol. 7, no. 6: American Physical Society, pp. 064033, 2017.
Speck, J. S., PURE AND DISORDERED GROUP III NITRIDE HETEROSTRUCTURES: GROWTH AND PHYSICAL PROPERTIES, 2017.
2016
Hwang, D., B. P. Yonkee, B. Saif Addin, R. M. Farrell, S. Nakamura, J. S. Speck, and S. DenBaars, "Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates", Optics Express, vol. 24, no. 20: Optical Society of America, pp. 22875–22880, 2016.
Hirai, A., Z. Jia, M. Saito, H. Yamada, K. Iso, S. P. DenBaars, S. Nakamura, and J. S. Speck, Planar nonpolar group-III nitride films grown on miscut substrates, 2016.
Hestroffer, K., C. Lund, H. Li, S. Keller, J. S. Speck, and U. K. Mishra, "Plasma-assisted molecular beam epitaxy growth diagram of InGaN on (0001) GaN for the optimized synthesis of InGaN compositional grades", physica status solidi (b), vol. 253, no. 4, pp. 626–629, 2016.
Hestroffer, K., C. Lund, H. Li, S. Keller, J. S. Speck, and U. K. Mishra, "Plasma-assisted molecular beam epitaxy growth diagram of InGaN on (0001) GaN for the optimized synthesis of InGaN compositional grades (Phys. Status Solidi B 4/2016)", physica status solidi (b), vol. 253, no. 4, pp. 792–792, 2016.
Mensi, M. D., D. L. Becerra, R. Ivanov, S. Marcinkevičius, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Properties of near-field photoluminescence in green emitting single and multiple semipolar (20< span style=", Optical Materials Express, vol. 6, no. 1: Optical Society of America, pp. 39–45, 2016.
2015
Marcinkevičius, S., A. Sztein, S. Nakamura, and J. S. Speck, "Properties of sub-band edge states in AlInN studied by time-resolved photoluminescence of a AlInN/GaN heterostructure", Semiconductor Science and Technology, vol. 30, no. 11: IOP Publishing, pp. 115017, 2015.
Speck, J. S., and D. A. Cohen, "Prospects for high power nonpolar and semipolar GaN-based laser diodes", High Power Diode Lasers and Systems Conference (HPD), 2015 IEEE: IEEE, pp. 1–2, 2015.
Kaun, S. W., B. Mazumder, M. N. Fireman, E. C. H. Kyle, U. K. Mishra, and J. S. Speck, "Pure AlN layers in metal-polar AlGaN/AlN/GaN and AlN/GaN heterostructures grown by low-temperature ammonia-based molecular beam epitaxy", Semiconductor Science and Technology, vol. 30, no. 5: IOP Publishing, pp. 055010, 2015.
2014
Chung-Ta, HSU., C-Y. Huang, Y. Zhao, S-C. Haung, D. F. Feezell, S. P. DenBaars, S. Nakamura, and J. S. Speck, Pec etching of (20-2-1) semipolar gallium nitride for external efficiency enhancement in light emitting diode applications, 2014.
Hirai, A., Z. Jia, M. Saito, H. Yamada, K. Iso, S. P. DenBaars, S. Nakamura, and J. S. Speck, Planar nonpolar group-III nitride films grown on miscut substrates, 2014.
McSkimming, B. M., F. Wu, T. Huault, C. Chaix, and J. S. Speck, "Plasma assisted molecular beam epitaxy of GaN with growth rates> 2.6 μm/h", Journal of Crystal Growth, vol. 386: Elsevier, pp. 168–174, 2014.
Bierwagen, O., and J. S. Speck, "Plasma-assisted molecular beam epitaxy of Sn-doped In2O3: Sn incorporation, structural changes, doping limits, and compensation", physica status solidi (a), vol. 211, no. 1: Wiley Online Library, pp. 48–53, 2014.
2013
Tamboli, A., E. L. Hu, and J. S. Speck, Photoelectrochemical etching for chip shaping of light emitting diodes, 2013.
Choi, S., F. Wu, O. Bierwagen, and J. S. Speck, "Polarity control and transport properties of Mg-doped (0001) InN by plasma-assisted molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 31, no. 3: AVS, pp. 031504, 2013.
Kelchner, K. M., and J. S. Speck, "Progress in Nonpolar and Semipolar GaN Materials and Devices", ECS Transactions, vol. 50, no. 6: The Electrochemical Society, pp. 217–221, 2013.
2012
Koslow, I. L., M. T. Hardy, P. Shan Hsu, P-Y. Dang, F. Wu, A. Romanov, Y-R. Wu, E. C. Young, S. Nakamura, J. S. Speck, et al., "Performance and polarization effects in (11 2\= 2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers", Applied Physics Letters, vol. 101, no. 12: AIP, pp. 121106, 2012.
Hirai, A., Z. Jia, M. Saito, H. Yamada, K. Iso, S. P. DenBaars, S. Nakamura, and J. S. Speck, Planar nonpolar m-plane group III nitride films grown on miscut substrates, 2012.
2011
Iso, K., H. Yamada, M. Saito, A. Hirai, S. P. DenBaars, J. S. Speck, and S. Nakamura, Planar nonpolar group iii-nitride films grown on miscut substrates, 2011.
Brinkley, S. E., Y-. Da Lin, A. Chakraborty, N. Pfaff, D. Cohen, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes", Applied Physics Letters, vol. 98, no. 1: AIP, pp. 011110, 2011.
Speck, J. S., "Progress in nonpolar and semipolar GaN materials and devices", Semiconductor Device Research Symposium (ISDRS), 2011 International: IEEE, pp. 1–1, 2011.

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