Publications

Found 43 results
Author Title Type [ Year(Asc)]
Filters: Author is Speck, James S and First Letter Of Title is C  [Clear All Filters]
2018
Filoche, M., M. Piccardo, C-K. Li, Y-R. Wu, J. S. Speck, B. Bonef, R. M. Farrell, S. Mayboroda, J-M. Lentali, L. Martinelli, et al., "Carrier localization induced by alloy disorder in nitride devices: theory and experiments (Conference Presentation)", Gallium Nitride Materials and Devices XIII, vol. 10532: International Society for Optics and Photonics, pp. 105320S, 2018.
2017
Shen, J-X., D. Wickramaratne, C. E. Dreyer, A. Alkauskas, E. Young, J. S. Speck, and C. G. Van de Walle, "Calcium as a nonradiative recombination center in InGaN", Applied Physics Express, vol. 10, no. 2: IOP Publishing, pp. 021001, 2017.
Li, H., B. Mazumder, B. Bonef, S. Keller, S. Wienecke, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Characterization of N-polar AlN in GaN/AlN/(Al, Ga) N heterostructures grown by metal-organic chemical vapor deposition", Semiconductor Science and Technology, vol. 32, no. 11: IOP Publishing, pp. 115004, 2017.
Bonef, B., R. Cramer, F. Wu, and J. S. Speck, "Correlated Transmission Electron Microscopy and Atom Probe Tomography study of Boron distribution in BGaN", Microscopy and Microanalysis, vol. 23, no. S1: Cambridge University Press, pp. 668–669, 2017.
2016
Hogan, J. E., S. W. Kaun, E. Ahmadi, Y. Oshima, and J. S. Speck, "Chlorine-based dry etching of β-Ga2O3", Semiconductor Science and Technology, vol. 31, no. 6: IOP Publishing, pp. 065006, 2016.
Oshima, Y., E. Ahmadi, S. C. Badescu, F. Wu, and J. S. Speck, "Composition determination of β-(Al x Ga1- x) 2O3 layers coherently grown on (010) β-Ga2O3 substrates by high-resolution X-ray diffraction", Applied Physics Express, vol. 9, no. 6: IOP Publishing, pp. 061102, 2016.
Foronda, H. M., A. E. Romanov, E. C. Young, C. A. Robertson, G. E. Beltz, and J. S. Speck, "Curvature and bow of bulk GaN substrates", Journal of Applied Physics, vol. 120, no. 3: AIP Publishing, pp. 035104, 2016.
Foronda, H. Miguel, A. E. Romanov, E. C. Young, C. A. Robertson, G. E. Beltz, and J. S. Speck, "Curvature of HVPE c-plane grown GaN wafers in the relation to stress gradients caused by inclined threading dislocations", Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1–1, 2016.
2012
Hurni, C. A., H. Kroemer, U. K. Mishra, and J. S. Speck, "Capacitance-voltage profiling on polar III-nitride heterostructures", Journal of Applied Physics, vol. 112, no. 8: AIP, pp. 083704, 2012.
Garrett, G. A., P. Rotella, H. Shen, M. Wraback, D. A. Haeger, R. B. Chung, N. Pfaff, E. C. Young, S. P. DenBaars, J. S. Speck, et al., "Carrier dynamics in active regions for ultraviolet optoelectronics grown on thick, relaxed AlGaN on semipolar bulk GaN", physica status solidi (b), vol. 249, no. 3: Wiley Online Library, pp. 507–510, 2012.
Lu, J., Y-L. Hu, D. F. Brown, F. Wu, S. Keller, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Charge and Mobility Enhancements in In-Polar InAl (Ga) N/Al (Ga) N/GaN Heterojunctions Grown by Metal–Organic Chemical Vapor Deposition Using a Graded Growth Strategy", Japanese Journal of Applied Physics, vol. 51, no. 11R: IOP Publishing, pp. 115502, 2012.
Young, E. C., F. Wu, A. E. Romanov, D. A. Haeger, S. Nakamura, S. P. DenBaars, D. A. Cohen, and J. S. Speck, "Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission", Applied Physics Letters, vol. 101, no. 14: AIP, pp. 142109, 2012.
Kaun, S. W., M. Hoi Wong, U. K. Mishra, and J. S. Speck, "Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 100, no. 26: AIP, pp. 262102, 2012.
Hurni, C. A., S. Choi, O. Bierwagen, and J. S. Speck, "Coupling resistance between n-type surface accumulation layer and p-type bulk in InN: Mg thin films", Applied Physics Letters, vol. 100, no. 8: AIP, pp. 082106, 2012.
Kim, K. C., M. C. Schmidt, F. Wu, A. Hirai, M. B. McLaurin, S. P. DenBaars, S. Nakamura, and J. S. Speck, CRYSTAL GROWTH OF M-PLANE AND SEMIPOLAR PLANES OF (Al, In, Ga, B) N ON VARIOUS SUBSTRATES, mar # " 22", 2012.

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