Publications
] , "Molecular beam epitaxy of nitrides for advanced electronic materials", Handbook of Crystal Growth: Thin Films and Epitaxy (Second Edition), pp. 705–754, 2015.
, "Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture", Applied Physics Letters, vol. 107, no. 1: AIP Publishing, pp. 011102, 2015.
, "Physical mechanisms affecting the reliability of GaN-based high electron mobility transistors", MRS Online Proceedings Library Archive, vol. 1792: Cambridge University Press, 2015.
, "Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy", Applied Physics Letters, vol. 106, no. 2: AIP Publishing, pp. 022104, 2015.
, "Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts", Journal of Applied Physics, vol. 118, no. 14: AIP Publishing, pp. 145304, 2015.
, "Stable vicinal step orientations in m-plane GaN", Journal of Crystal Growth, vol. 411: Elsevier, pp. 56–62, 2015.
, "Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN", Journal of Applied Physics, vol. 118, no. 15: AIP Publishing, pp. 155701, 2015.
, "Carrier redistribution between different potential sites in semipolar (20 2\= 1) InGaN quantum wells studied by near-field photoluminescence", Applied Physics Letters, vol. 105, no. 11: AIP Publishing, pp. 111108, 2014.
, "Compensating vacancy defects in Sn-and Mg-doped In 2 O 3", Physical Review B, vol. 90, no. 24: American Physical Society, pp. 245307, 2014.
, "Defects in GaN based transistors", Gallium Nitride Materials and Devices IX, vol. 8986: International Society for Optics and Photonics, pp. 89861C, 2014.
, "Elemental Quantification and Visualization of GaN Structures using APT and SIMS", Microscopy and Microanalysis, vol. 20, no. S3: Cambridge University Press, pp. 2112–2113, 2014.
, "He implantation induced defects in InN", Journal of Physics: Conference Series, vol. 505, no. 1: IOP Publishing, pp. 012012, 2014.
, "Highly polarized photoluminescence and its dynamics in semipolar (20 2\= 1\=) InGaN/GaN quantum well", Applied Physics Letters, vol. 104, no. 11: AIP, pp. 111113, 2014.
, "High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration", Applied Physics Letters, vol. 104, no. 16: AIP, pp. 163902, 2014.
, "Improved growth rates and purity of basic ammonothermal GaN", Journal of Crystal Growth, vol. 403: Elsevier, pp. 7–17, 2014.
, "Metalorganic chemical vapor deposition of Al 2 O 3 using trimethylaluminum and O 2 precursors: Growth mechanism and crystallinity", Journal of Crystal Growth, vol. 408: Elsevier, pp. 78–84, 2014.
, "Nonpolar and semipolar LEDs", Nitride Semiconductor Light-Emitting Diodes (LEDs), pp. 250–275, 2014.
, "Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching", Applied Physics Letters, vol. 105, no. 3: AIP, pp. 031111, 2014.
, "Schottky contacts to In ${$sub 2$}$ O ${$sub 3$}$", APL Materials, vol. 2, no. 4, 2014.
, "Toward a physical understanding of the reliability-limiting E C-0.57 eV trap in GaN HEMTs", Reliability Physics Symposium, 2014 IEEE International: IEEE, pp. 2C–1, 2014.
, "Vacancy complexes in Sb-doped SnO 2", AIP Conference Proceedings, vol. 1583, no. 1: AIP, pp. 368–371, 2014.
, "Valence-band density of states and surface electron accumulation in epitaxial SnO 2 films", Physical Review B, vol. 90, no. 15: American Physical Society, pp. 155413, 2014.
, "3D Characterization Study of High-k Dielectric on GaN Using Atom Probe Tomography", Microscopy and Microanalysis, vol. 19, no. S2: Cambridge University Press, pp. 1026–1027, 2013.
, "Comparative analysis of 20 2\= 1 and 20 2\= 1\= semipolar GaN light emitting diodes using atom probe tomography", Applied Physics Letters, vol. 102, no. 25: AIP, pp. 251104, 2013.
, "Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition", Journal of Applied Physics, vol. 114, no. 16: AIP, pp. 164507, 2013.