Publications
"Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope", Journal of applied physics, vol. 94, no. 7: AIP, pp. 4315–4319, 2003.
, "Cathodoluminescence characterization of dislocations in gallium nitride using a transmission", Info: Postprints, UC Santa Barbara, 2003.
, "Compact distributed phase shifters at X-band using BST", Integrated Ferroelectrics, vol. 56, no. 1: Taylor & Francis, pp. 1087–1095, 2003.
, "Correlated scanning Kelvin probe and conductive atomic force microscopy studies of dislocations in gallium nitride", Journal of applied physics, vol. 94, no. 3: AIP, pp. 1448–1453, 2003.
, "Crystallographic wing tilt in laterally overgrown GaN", Journal of Physics D: Applied Physics, vol. 36, no. 10A: IOP Publishing, pp. A188, 2003.
, "Defect reduction in (1120) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy", Applied physics letters, vol. 83, no. 4: AIP, pp. 644–646, 2003.
, "Defect Structure of Mg-Doped GaN Nanowires", Microscopy and Microanalysis, vol. 9, no. S02: Cambridge University Press, pp. 344–345, 2003.
, "Detection of carbon-related bandgap states in GaN using deep level optical spectroscopy", Compound Semiconductors, 2003. International Symposium on: IEEE, pp. 4–5, 2003.
, "Dislocation-free GaN nanowires", Microscopy and Microanalysis, vol. 9, no. S02: Cambridge University Press, pp. 342–343, 2003.
, "Electrical and structural properties of AlGaN/AlGaN superlattice structures grown by metal-organic chemical vapor deposition", Optical Materials, vol. 23, no. 1-2: North-Holland, pp. 187–195, 2003.
, "Growth and fabrication of short-wavelength UV LEDs [5187-31]", PROCEEDINGS-SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING: International Society for Optical Engineering; 1999, pp. 250–259, 2003.
, "High-quality GaN on intentionally roughened c-sapphire", The European Physical Journal Applied Physics, vol. 22, no. 1: EDP Sciences, pp. 11–14, 2003.
, "High-quality InAs y P 1- y step-graded buffer by molecular-beam epitaxy", Applied physics letters, vol. 82, no. 19: AIP, pp. 3212–3214, 2003.
, "Identification of carbon-related bandgap states in GaN grown by MOCVD", MRS Online Proceedings Library Archive, vol. 798: Cambridge University Press, 2003.
, "Impact of Growth Pressure on Defects in GaN Grown", Proceedings of the IEEE... International Symposium on Compound Semiconductors, vol. 30: IEEE, pp. 42, 2003.
, "Impact of growth pressure on defects in GaN grown by metalorganic chemical vapor deposition", Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on: IEEE, pp. 42–48, 2003.
, "Influence of Growth Parameters on the Deep Level Spectrum in MBE-Grown n-GaN", MRS Online Proceedings Library Archive, vol. 798: Cambridge University Press, 2003.
, "Influence of stoichiometry on the dielectric properties of sputtered strontium titanate thin films", Journal of applied physics, vol. 94, no. 5: AIP, pp. 3390–3396, 2003.
, "Magnetotransport measurement of effective mass, quantum scattering time, and alloy scattering potential of polarization-doped 3D electron slabs in graded-AlGaN", physica status solidi (c), no. 7: Wiley Online Library, pp. 2339–2342, 2003.
, "Modeling the extended defect evolution in lateral epitaxial overgrowth of GaN: Subgrain stability", Journal of applied physics, vol. 93, no. 1: AIP, pp. 106–114, 2003.
, "Observation of long transients in the electrical characterization of thin film BST capacitors", Integrated Ferroelectrics, vol. 53, no. 1: Taylor & Francis, pp. 503–511, 2003.
, "Origin and microscopic mechanism for suppression of leakage currents in Schottky contacts to GaN grown by molecular-beam epitaxy", Journal of applied physics, vol. 94, no. 12: AIP, pp. 7611–7615, 2003.
, "Photoreflectance studiesof N-and Ga-face AlGaN/GaN heterostructures confininga polarisation induced 2DEG", physica status solidi (b), vol. 240, no. 2: Wiley Online Library, pp. 380–383, 2003.
, "Polarity control during molecular beam epitaxy growth of Mg-doped GaN", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 21, no. 4: AVS, pp. 1804–1811, 2003.
, "Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment", Applied physics letters, vol. 82, no. 8: AIP, pp. 1293–1295, 2003.
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