Publications

Found 496 results
Author Title Type [ Year(Desc)]
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2003
Zhang, JP., Y. Wu, GS. Cheng, M. Moskovits, and JS. Speck, "Dislocation-free GaN nanowires", Microscopy and Microanalysis, vol. 9, no. S02: Cambridge University Press, pp. 342–343, 2003.
Keller, S., P. Waltereit, P. Cantu, UK. Mishra, JS. Speck, and SP. DenBaars, "Electrical and structural properties of AlGaN/AlGaN superlattice structures grown by metal-organic chemical vapor deposition", Optical Materials, vol. 23, no. 1-2: North-Holland, pp. 187–195, 2003.
Katona, TM., T. Margalith, C. Moe, MC. Schmidt, S. Nakamura, JS. Speck, and SP. DenBaars, "Growth and fabrication of short-wavelength UV LEDs [5187-31]", PROCEEDINGS-SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING: International Society for Optical Engineering; 1999, pp. 250–259, 2003.
Golan, Y., P. Fini, D. Dahan, F. Wu, S. Zamir, J. Salzman, and JS. Speck, "High-quality GaN on intentionally roughened c-sapphire", The European Physical Journal Applied Physics, vol. 22, no. 1: EDP Sciences, pp. 11–14, 2003.
Hudait, MK., Y. Lin, DM. Wilt, JS. Speck, CA. Tivarus, ER. Heller, JP. Pelz, and SA. Ringel, "High-quality InAs y P 1- y step-graded buffer by molecular-beam epitaxy", Applied physics letters, vol. 82, no. 19: AIP, pp. 3212–3214, 2003.
Armstrong, A., AR. Arehart, SA. Ringel, B. Moran, SP. DenBaars, UK. Mishra, and JS. Speck, "Identification of carbon-related bandgap states in GaN grown by MOCVD", MRS Online Proceedings Library Archive, vol. 798: Cambridge University Press, 2003.
Armstrong, A., AR. Arehart, B. Moran, SP. DenBaars, U. Mishra, JS. Speck, and SA. Ringel, "Impact of Growth Pressure on Defects in GaN Grown", Proceedings of the IEEE... International Symposium on Compound Semiconductors, vol. 30: IEEE, pp. 42, 2003.
Armstrong, A., AR. Arehart, B. Moran, SP. DenBaars, UK. Mishra, JS. Speck, and SA. Ringel, "Impact of growth pressure on defects in GaN grown by metalorganic chemical vapor deposition", Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on: IEEE, pp. 42–48, 2003.
Arehart, AR., C. Poblenz, B. Heying, JS. Speck, UK. Mishra, SP. DenBaars, and SA. Ringel, "Influence of Growth Parameters on the Deep Level Spectrum in MBE-Grown n-GaN", MRS Online Proceedings Library Archive, vol. 798: Cambridge University Press, 2003.
Taylor, TR., PJ. Hansen, N. Pervez, B. Acikel, RA. York, and JS. Speck, "Influence of stoichiometry on the dielectric properties of sputtered strontium titanate thin films", Journal of applied physics, vol. 94, no. 5: AIP, pp. 3390–3396, 2003.
Jena, D., S. Heikman, JS. Speck, UK. Mishra, A. Link, and O. Ambacher, "Magnetotransport measurement of effective mass, quantum scattering time, and alloy scattering potential of polarization-doped 3D electron slabs in graded-AlGaN", physica status solidi (c), no. 7: Wiley Online Library, pp. 2339–2342, 2003.
Romanov, AE., P. Fini, and JS. Speck, "Modeling the extended defect evolution in lateral epitaxial overgrowth of GaN: Subgrain stability", Journal of applied physics, vol. 93, no. 1: AIP, pp. 106–114, 2003.
Pervez, NK., PJ. Hansen, TR. Taylor, JS. Speck, and RA. York, "Observation of long transients in the electrical characterization of thin film BST capacitors", Integrated Ferroelectrics, vol. 53, no. 1: Taylor & Francis, pp. 503–511, 2003.
Miller, EJ., DM. Schaadt, ET. Yu, XL. Sun, LJ. Brillson, P. Waltereit, and JS. Speck, "Origin and microscopic mechanism for suppression of leakage currents in Schottky contacts to GaN grown by molecular-beam epitaxy", Journal of applied physics, vol. 94, no. 12: AIP, pp. 7611–7615, 2003.
Winzer, A. T., R. Goldhahn, C. Buchheim, O. Ambacher, A. Link, M. Stutzmann, Y. Smorchkova, UK. Mishra, and JS. Speck, "Photoreflectance studiesof N-and Ga-face AlGaN/GaN heterostructures confininga polarisation induced 2DEG", physica status solidi (b), vol. 240, no. 2: Wiley Online Library, pp. 380–383, 2003.
Green, DS., E. Haus, F. Wu, L. Chen, UK. Mishra, and JS. Speck, "Polarity control during molecular beam epitaxy growth of Mg-doped GaN", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 21, no. 4: AVS, pp. 1804–1811, 2003.
Miller, EJ., DM. Schaadt, ET. Yu, P. Waltereit, C. Poblenz, and JS. Speck, "Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment", Applied physics letters, vol. 82, no. 8: AIP, pp. 1293–1295, 2003.
Cantu, P., F. Wu, P. Waltereit, S. Keller, AE. Romanov, UK. Mishra, SP. DenBaars, and JS. Speck, "Si doping effect on strain reduction in compressively strained Al 0.49 Ga 0.51 N thin films", Applied physics letters, vol. 83, no. 4: AIP, pp. 674–676, 2003.
Cantu, P., S. Keller, F. Wu, P. Waltereit, AE. Romanov, UK. Mishra, JS. Speck, and SP. DenBaars, "Si doping effects on the electrical and structural properties of high Al composition AlxGa1- xN films grown by MOCVD", physica status solidi (c), no. 7: Wiley Online Library, pp. 2010–2013, 2003.
Romanov, AE., and JS. Speck, "Stress relaxation in mismatched layers due to threading dislocation inclination", Applied Physics Letters, vol. 83, no. 13: AIP, pp. 2569–2571, 2003.
Craven, MD., A. Chakraborty, B. Imer, F. Wu, S. Keller, UK. Mishra, JS. Speck, and SP. DenBaars, "Structural and electrical characterization of a-plane GaN grown on a-plane SiC", physica status solidi (c), no. 7: Wiley Online Library, pp. 2132–2135, 2003.
Haskell, BA., F. Wu, S. Matsuda, MD. Craven, PT. Fini, SP. DenBaars, JS. Speck, and S. Nakamura, "Structural and morphological characteristics of planar (1120) a-plane gallium nitride grown by hydride vapor phase epitaxy", Applied Physics Letters, vol. 83, no. 8: AIP, pp. 1554–1556, 2003.
Elhamri, S., A. Saxler, WC. Mitchel, R. Berney, C. Elsass, Y. Smorchkova, UK. Mishra, JS. Speck, U. Chowdhury, and RD. Dupuis, "Study of deleterious aging effects in GaN/AlGaN heterostructures", Journal of applied physics, vol. 93, no. 2: AIP, pp. 1079–1082, 2003.
2004
Zhang, H., EJ. Miller, ET. Yu, C. Poblenz, and JS. Speck, "Analysis of interface electronic structure in In x Ga 1- x N/GaN heterostructures", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 22, no. 4: AVS, pp. 2169–2174, 2004.
Miller, EJ., ET. Yu, P. Waltereit, and JS. Speck, "Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy", Applied physics letters, vol. 84, no. 4: AIP, pp. 535–537, 2004.

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