Publications
] , "Higher efficiency InGaN laser diodes with an improved quantum well capping configuration", Applied physics letters, vol. 81, no. 22: AIP, pp. 4275–4277, 2002.
, "Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy", Applied physics letters, vol. 80, no. 5: AIP, pp. 805–807, 2002.
, "Impact of thermal strain on the dielectric constant of sputtered barium strontium titanate thin films", Applied Physics Letters, vol. 80, no. 11: AIP, pp. 1978–1980, 2002.
, "Impurity incorporation in InGaN grown by rf plasma-assisted molecular beam epitaxy", Applied physics letters, vol. 81, no. 15: AIP, pp. 2767–2769, 2002.
, "Investigation of the piezoelectric polarization in (In, Ga) N/GaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy", Journal of applied physics, vol. 92, no. 1: AIP, pp. 456–460, 2002.
, "Mg-rich precipitates in the p-type doping of InGaN-based laser diodes", Applied physics letters, vol. 80, no. 14: AIP, pp. 2469–2471, 2002.
, "Modeling cross-hatch surface morphology in growing mismatched layers", Journal of applied physics, vol. 91, no. 4: AIP, pp. 1933–1943, 2002.
, "Morphological and optical properties of InGaN laser diodes on laterally overgrown GaN", Journal of crystal growth, vol. 234, no. 4: North-Holland, pp. 623–630, 2002.
, "Nonpolar (11&1macr; 0) a-Plane Gallium Nitride Thin Films Grown on (1&1macr; 02) r-Plane Sapphire: Heteroepitaxy and Lateral Overgrowth", physica status solidi (a), vol. 194, no. 2: WILEY-VCH Verlag Berlin, pp. 541–544, 2002.
, "Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope", Journal of applied physics, vol. 91, no. 12: AIP, pp. 9821–9826, 2002.
, "The role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy", Journal of crystal growth, vol. 246, no. 1-2: North-Holland, pp. 55–63, 2002.
, "Self-assembling quantum dot lattices through nucleation site engineering", Journal of crystal growth, vol. 236, no. 4: North-Holland, pp. 647–654, 2002.
, "Structural characterization of nonpolar (1120) a-plane GaN thin films grown on (1102) r-plane sapphire", Applied Physics Letters, vol. 81, no. 3: AIP, pp. 469–471, 2002.
, "Threading dislocation reduction via laterally overgrown nonpolar (1120) a-plane GaN", Applied Physics Letters, vol. 81, no. 7: AIP, pp. 1201–1203, 2002.
, "Tunable passive integrated circuits using BST thin films", Integrated Ferroelectrics, vol. 49, no. 1: Taylor & Francis, pp. 161–170, 2002.
, "336 nm ultraviolet LEDs grown with AlN interlayers for strain reduction", physica status solidi (c), no. 7: Wiley Online Library, pp. 2206–2209, 2003.
, "Antimony segregation in the oxidation of AlAsSb interlayers", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 21, no. 6: AVS, pp. 1883–1891, 2003.
, "Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope", Journal of applied physics, vol. 94, no. 7: AIP, pp. 4315–4319, 2003.
, "Cathodoluminescence characterization of dislocations in gallium nitride using a transmission", Info: Postprints, UC Santa Barbara, 2003.
, "Compact distributed phase shifters at X-band using BST", Integrated Ferroelectrics, vol. 56, no. 1: Taylor & Francis, pp. 1087–1095, 2003.
, "Correlated scanning Kelvin probe and conductive atomic force microscopy studies of dislocations in gallium nitride", Journal of applied physics, vol. 94, no. 3: AIP, pp. 1448–1453, 2003.
, "Crystallographic wing tilt in laterally overgrown GaN", Journal of Physics D: Applied Physics, vol. 36, no. 10A: IOP Publishing, pp. A188, 2003.
, "Defect reduction in (1120) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy", Applied physics letters, vol. 83, no. 4: AIP, pp. 644–646, 2003.
, "Defect Structure of Mg-Doped GaN Nanowires", Microscopy and Microanalysis, vol. 9, no. S02: Cambridge University Press, pp. 344–345, 2003.
, "Detection of carbon-related bandgap states in GaN using deep level optical spectroscopy", Compound Semiconductors, 2003. International Symposium on: IEEE, pp. 4–5, 2003.