Publications
] , "Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors", Applied Physics Letters, vol. 77, no. 2: AIP, pp. 250–252, 2000.
, "Reactive removal of misfit dislocations from InGaAs on GaAs by lateral oxidation", Applied Physics Letters, vol. 77, no. 6: AIP, pp. 845–847, 2000.
, "Relaxation enhancing interlayers (REIs) in threading dislocation reduction", Journal of Electronic Materials, vol. 29, no. 7: Springer-Verlag, pp. 901–905, 2000.
, "RF sputtered high tunability Barium Strontium Titanate (BST) thin films for high frequency applications", ISIF 2000 Conference, Aachen, Germany, Mar, 2000.
, "Step bunching on the vicinal GaN (0001) surface", Physical Review B, vol. 62, no. 16: APS, pp. R10661, 2000.
, "Strain relaxation in InGaAs lattice engineered substrates", Journal of Electronic Materials, vol. 29, no. 7: Springer-Verlag, pp. 944–949, 2000.
, "Strain relaxation of InGaAs by lateral oxidation of AlAs", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 18, no. 4: AVS, pp. 2066–2071, 2000.
, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)-Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 88, no. 4: New York, NY: American Institute of Physics, c1937-, pp. 1855–1860, 2000.
, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER-Reactive removal of misfit dislocations from InGaAs on GaAs by lateral oxidation", Applied Physics Letters, vol. 77, no. 6: New York [etc.] American Institute of Physics., pp. 845–847, 2000.
, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER-Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy", Applied Physics Letters, vol. 76, no. 6: New York [etc.] American Institute of Physics., pp. 718–720, 2000.
, Transition between the 1 x 1 and (${$radical$}$ 3 x 2 ${$radical$}$ 3) R30 ${$degree$}$ surface structures of GaN in the vapor-phase environment: Argonne National Laboratory, Argonne, IL (US), 2000.
, "Transition between the 1$\times$ 1 and (3$\times$ 23) R30∞ surface structures of GaN in the vapor-phase environment", Physica B: Condensed Matter, vol. 283, no. 1-3: North-Holland, pp. 217–222, 2000.
, "Transmission electron microscopy studies of defects in HgCdTe device structures grown by molecular beam epitaxy", Journal of Electronic Materials, vol. 29, no. 6: Springer-Verlag, pp. 732–735, 2000.
, "Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers", Applied Physics Letters, vol. 77, no. 24: AIP, pp. 3998–4000, 2000.
, "AlN/GaN and (Al, Ga) N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy", Journal of Applied Physics, vol. 90, no. 10: AIP, pp. 5196–5201, 2001.
, "Ballistic Electron Emission Microscopy Study of Individual Threading Dislocations in GaN", APS Meeting Abstracts, 2001.
, "Capture Kinetics of Electron Traps in MBE-Grown n-GaN", physica status solidi (b), vol. 228, no. 1: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 309–313, 2001.
, "Carrier Trapping and Recombination at Point Defects and Dislocations in MOCVD n-GaN", physica status solidi (b), vol. 228, no. 3: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 937–946, 2001.
, "Chapter 6: III-Nitrides and Related Materials-6.1 Growth and Physical Properties-Formation and Electronic Transport of 2D Electron and Hole Gases in AlGaN/GaN Heterostructures", Materials Science Forum, vol. 353: Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-, pp. 787–790, 2001.
, "Characterization of individual threading dislocations in GaN using ballistic electron emission microscopy", Physical review letters, vol. 87, no. 10: APS, pp. 106802, 2001.
, "Condensed Matter: Electronic Properties, etc.-Characterization of Individual Threading Dislocations in GaN Using Ballistic Electron Emission Microscopy", Physical Review Letters, vol. 87, no. 10: [Woodbury, NY, etc.] American Physical Society., pp. 106802–106802, 2001.
, "Development of cross-hatch morphology during growth of lattice mismatched layers", MRS Online Proceedings Library Archive, vol. 673: Cambridge University Press, 2001.
, "Elastic fields of quantum dots in subsurface layers", Journal of applied physics, vol. 89, no. 8: AIP, pp. 4523–4531, 2001.
, Heteroepitaxy on Compliant Substrates for Vertical and Horizontal Integration of Multi-Functional Devices: DTIC Document, 2001.
, "Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Journal of crystal growth, vol. 233, no. 4: North-Holland, pp. 709–716, 2001.