Publications
] , "Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 88, no. 4: AIP, pp. 1855–1860, 2000.
, "Controlled ordering and positioning of InAs self-assembled quantum dots", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 18, no. 4: AVS, pp. 2193–2196, 2000.
, "Deep levels in n-type Schottky and p+-n homojunction GaN diodes", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 922–928, 2000.
, "Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction", Journal of crystal growth, vol. 209, no. 4: Elsevier, pp. 581–590, 2000.
, "Dislocation reduction in GaN films through selective island growth of InGaN", Applied Physics Letters, vol. 77, no. 17: AIP, pp. 2665–2667, 2000.
, Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes [Multiple Quantum Wells]: Univ. of California, Santa Barbara, CA (US), 2000.
, "Effect of Sb composition on lateral oxidation rates in AlAs 1- x Sb x", Applied Physics Letters, vol. 76, no. 10: AIP, pp. 1291–1293, 2000.
, "Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy", Applied Physics Letters, vol. 77, no. 20: AIP, pp. 3167–3169, 2000.
, "(Ga, Mn) As as a digital ferromagnetic heterostructure", Applied Physics Letters, vol. 77, no. 15: AIP, pp. 2379–2381, 2000.
, "Growth and characterization of graded AlGaN conducting buffer layers on n+ SiC substrates", Journal of crystal growth, vol. 221, no. 1-4: North-Holland, pp. 301–304, 2000.
, "Hydrogen passivation of deep levels in n–GaN", Applied Physics Letters, vol. 77, no. 10: AIP, pp. 1499–1501, 2000.
, "Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire", Applied Physics Letters, vol. 76, no. 5: AIP, pp. 529–531, 2000.
, "In situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN", Applied Physics Letters, vol. 76, no. 26: AIP, pp. 3893–3895, 2000.
, "In situ studies of the effect of silicon on GaN growth modes", Journal of crystal growth, vol. 221, no. 1-4: North-Holland, pp. 98–105, 2000.
, "LASERS, OPTICS, AND OPTOELECTRONICS-Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire", Applied Physics Letters, vol. 76, no. 5: New York [etc.] American Institute of Physics., pp. 529–531, 2000.
, "Layer-by-layer growth of GaN induced by silicon", Applied Physics Letters, vol. 77, no. 11: AIP, pp. 1626–1628, 2000.
, "Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy", Applied Physics Letters, vol. 76, no. 6: AIP, pp. 718–720, 2000.
, "Modeling of threading dislocation reduction in growing GaN layers", Physica Status Solidi A Applied Research, vol. 179, no. 1: ACADEMIC VERLAG GMBH, pp. 125–146, 2000.
, "Molecular beam epitaxy of InGaN/GaN heterostructures for green luminescence", Compound Semiconductors, 2000 IEEE International Symposium on: IEEE, pp. 371–376, 2000.
, "Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes", Applied Physics Letters, vol. 76, no. 21: AIP, pp. 3064–3066, 2000.
, "Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 77, no. 18: AIP, pp. 2885–2887, 2000.
, "Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces-Interface Strain Effects and Atomic Level Characterization-Strain relaxation of InGaAs by lateral", Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur, vol. 18, no. 4: Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-, pp. 2066–2071, 2000.
, "Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces-Quantum Dots and Self-Assembled Interface Structures-Controlled ordering and positioning of InAs", Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur, vol. 18, no. 4: Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-, pp. 2193–2196, 2000.
, "Polarity determination for MOCVD growth of GaN on Si (111) by convergent beam electron diffraction", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 104–110, 2000.
, Polarity determination for MOCVD growth of GaN on Si (111) by convergent beam electron diffraction [Metal Organic Chemical Vapor Deposition]: Univ. of California, Santa Barbara, CA (US), 2000.