Publications
Found 40 results
Author Title Type [ Year
] Filters: Author is Speck, JS and First Letter Of Title is E [Clear All Filters]
, "Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition", Journal of Applied Physics, vol. 119, no. 1: AIP Publishing, pp. 015303, 2016.
, "Elemental Quantification and Visualization of GaN Structures using APT and SIMS", Microscopy and Microanalysis, vol. 20, no. S3: Cambridge University Press, pp. 2112–2113, 2014.
, "Erratum:ìAsymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructuresî[Appl. Phys. Lett. 101, 091601 (2012)]", Applied Physics Letters, vol. 101, no. 22: AIP, pp. 229902, 2012.
, "Effect of n-AlGaN cleave assistance layers on the morphology of c-plane cleaved facets for m-plane InGaN/GaN laser diodes", physica status solidi (c), vol. 8, no. 7-8: Wiley Online Library, pp. 2226–2228, 2011.
, "Electroluminescence enhancement of (112\= 2) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates", Current Applied Physics, vol. 11, no. 3: North-Holland, pp. 954–958, 2011.
, "Erratum for ëX-band power performance of N-face GaN MIS-HEMTsí", Electronics Letters, vol. 47, no. 6: IET Digital Library, pp. 416–416, 2011.
, "Effect of nitrogen plasma power on defect levels in Ni/n-GaN Schottky diodes grown by molecular beam epitaxy", Journal of Applied Physics, vol. 107, no. 5: AIP, pp. 054518, 2010.
, "Evaluation of threading dislocation densities in In-and N-face InN", Journal of Applied Physics, vol. 107, no. 5: AIP, pp. 053517, 2010.
, "Electron transport properties of antimony doped Sn O 2 single crystalline thin films grown by plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 106, no. 9: AIP, pp. 093704, 2009.
, "Electronic structure and effective masses of InN under pressure", Journal of Applied Physics, vol. 104, no. 1: AIP, pp. 013704, 2008.
, "Effect of threading dislocation density on Ni/ n-Ga N Schottky diode I-V characteristics", Journal of applied physics, vol. 100, no. 2: AIP, pp. 023709, 2006.
, "Exciton dynamics in nonpolar (11$$\backslash$bar 2 $0) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth", physica status solidi (c), vol. 3, no. 6: WILEY-VCH Verlag, pp. 2082–2086, 2006.
, "Effect of AlN nucleation layer growth conditions on buffer leakage in Al Ga N/ Ga N high electron mobility transistors grown by molecular beam epitaxy (MBE)", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 23, no. 4: AVS, pp. 1562–1567, 2005.
, "Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 22, no. 3: AVS, pp. 1145–1149, 2004.
, "Effect of nitridation on polarity, microstructure, and morphology of AlN films", Applied physics letters, vol. 84, no. 6: AIP, pp. 912–914, 2004.
, "Effect of thermal strain on the ferroelectric phase transition in polycrystalline Ba 0.5 Sr 0.5 Ti O 3 thin films studied by Raman spectroscopy", Applied physics letters, vol. 85, no. 18: AIP, pp. 4124–4126, 2004.
, "Electrical and structural properties of AlGaN/AlGaN superlattice structures grown by metal-organic chemical vapor deposition", Optical Materials, vol. 23, no. 1-2: North-Holland, pp. 187–195, 2003.
, "Effect of the nucleation layer on stress during cantilever epitaxy of GaN on Si (111)", physica status solidi (a), vol. 194, no. 2: WILEY-VCH Verlag Berlin, pp. 550–553, 2002.
, "Electronic properties of GaN induced by a subsurface stressor", Applied physics letters, vol. 81, no. 25: AIP, pp. 4754–4756, 2002.
, "Electroreflectance and Photoreflectance Studies of Electric Fields in Pt/GaN Schottky Diodes and AlGaN/GaN Heterostructures", MRS Online Proceedings Library Archive, vol. 743: Cambridge University Press, 2002.
, "Erratum:ìAlN/GaN and (Al, Ga) N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxyî[J. Appl. Phys. 90, 5196 (2001)]", Journal of Applied Physics, vol. 91, no. 7: AIP, pp. 4780–4780, 2002.
, "Elastic fields of quantum dots in subsurface layers", Journal of applied physics, vol. 89, no. 8: AIP, pp. 4523–4531, 2001.
, Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes [Multiple Quantum Wells]: Univ. of California, Santa Barbara, CA (US), 2000.
, "Effect of Sb composition on lateral oxidation rates in AlAs 1- x Sb x", Applied Physics Letters, vol. 76, no. 10: AIP, pp. 1291–1293, 2000.
, "Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy", Applied Physics Letters, vol. 77, no. 20: AIP, pp. 3167–3169, 2000.