Publications

Found 44 results
Author Title Type [ Year(Asc)]
Filters: Author is Steven P. DenBaars  [Clear All Filters]
2020
Chow, Y. Chao, C. Lee, M. S. Wong, Y-R. Wu, S. Nakamura, S. P. DenBaars, J. E. Bowers, and J. S. Speck, "Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors", Opt. Express, vol. 28, pp. 23796–23805, Aug, 2020.
Li, H., P. Li, H. Zhang, Y. Chao Chow, M. S. Wong, S. Pinna, J. Klamkin, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Electrically driven, polarized, phosphor-free white semipolar (20-21) InGaN light-emitting diodes grown on semipolar bulk GaN substrate", Opt. Express, vol. 28, pp. 13569–13575, Apr, 2020.
Alias, E. A., M. E. A. Samsudin, N. Ibrahim, A. J. Mughal, S. P. DenBaars, J. S. Speck, S. Nakamura, and N. Zainal, "Highly efficient InGaN-based LED with pre-roughening backside of GaN substrate", J. Opt. Soc. Am. B, vol. 37, pp. 1614–1619, Jun, 2020.
Wong, M. S., J. A. Kearns, C. Lee, J. M. Smith, C. Lynsky, G. Lheureux, H. Choi, J. Kim, C. Kim, S. Nakamura, et al., "Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments", Opt. Express, vol. 28, pp. 5787–5793, Feb, 2020.
Khoury, M., H. Li, P. Li, Y. Chao Chow, B. Bonef, H. Zhang, M. S. Wong, S. Pinna, J. Song, J. Choi, et al., "Polarized monolithic white semipolar (202̅1) InGaN light-emitting diodes grown on high quality (202̅1) GaN/sapphire templates and its application to visible light communication", Nano Energy, vol. 67, pp. 104236, 2020.
Bonef, B., C. E. Reilly, F. Wu, S. Nakamura, S. P. DenBaars, S. Keller, and J. S. Speck, "Quantitative investigation of indium distribution in InN wetting layers and dots grown by metalorganic chemical vapor deposition", Applied Physics Express, vol. 13, pp. 065005, may, 2020.
Li, P., H. Zhang, H. Li, M. Iza, Y. Yao, M. S. Wong, N. Palmquist, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition", Opt. Express, vol. 28, pp. 18707–18712, Jun, 2020.
Zollner, C. J., A. S. Almogbel, Y. Yao, M. Wang, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Superlattice hole injection layers for UV LEDs grown on SiC", Opt. Mater. Express, vol. 10, pp. 2171–2180, Sep, 2020.
2019
Hamdy, K. W., E. C. Young, A. I. Alhassan, D. L. Becerra, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes", Opt. Express, vol. 27, pp. 8327–8334, Mar, 2019.
Saifaddin, B. K., M. Iza, H. Foronda, A. Almogbel, C. J. Zollner, F. Wu, A. Alyamani, A. Albadri, S. Nakamura, S. P. DenBaars, et al., "Impact of roughening density on the light extraction efficiency of thin-film flip-chip ultraviolet LEDs grown on SiC", Opt. Express, vol. 27, pp. A1074–A1083, Aug, 2019.
Kamikawa, T., S. Gandrothula, M. Araki, H. Li, V. Bonito Oliva, F. Wu, D. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrate", Opt. Express, vol. 27, pp. 24717–24723, Aug, 2019.
Kang, C. Hong, G. Liu, C. Lee, O. Alkhazragi, J. M. Wagstaff, K-H. Li, F. Alhawaj, T. Khee Ng, J. S. Speck, S. Nakamura, et al., "Semipolar (202̅1̅) InGaN/GaN micro-photodetector for gigabit-per-second visible light communication", Applied Physics Express, vol. 13, pp. 014001, nov, 2019.
Mehari, S., D. A. Cohen, D. L. Becerra, H. Zhang, C. Weisbuch, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Semipolar III-nitride laser diodes for solid-state lighting", Novel In-Plane Semiconductor Lasers XVIII: International Society for Optics and Photonics, 2019.
Wong, M. S., C. Lee, D. J. Myers, D. Hwang, J. A. Kearns, T. Li, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Size-independent peak efficiency of III-nitride micro-light-emitting-diodes using chemical treatment and sidewall passivation", Applied Physics Express, vol. 12, pp. 097004, aug, 2019.
2018
Malkowski, T. F., J. S. Speck, S. P. DenBaars, and S. Nakamura, "An exploratory study of acidic ammonothermal growth in a TZM autoclave at high temperatures", Journal of Crystal Growth, vol. 499, pp. 85 - 89, 2018.
2011
Farrell, R. M., D. A. Haeger, P. Shan Hsu, M. T. Hardy, K. M. Kelchner, K. Fujito, D. F. Feezell, U. K. Mishra, S. P. DenBaars, J. S. Speck, et al., "AlGaN-Cladding-Free m -Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers", Applied Physics Express, vol. 4, pp. 092105, 2011.
2010
Da Lin, Y-., S. Yamamoto, C-Y. Huang, C-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes", Applied Physics Express, vol. 3, pp. 082001, 2010.
2005
Murai, A., C. Kruse, K. Samonji, L. McCarthy, J. S. Speck, U. K. Mishra, S. P. DenBaars, and D. Hommel, "Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II–VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding", Japanese Journal of Applied Physics, vol. 44, pp. L958, 2005.
Moe, C. G., H. Masui, M. C. Schmidt, L. Shen, B. Moran, S. Newman, K. Vampola, T. Mates, S. Keller, J. S. Speck, et al., "Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide", Japanese Journal of Applied Physics, vol. 44, pp. L502, 2005.

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