We report on the structural and optical characteristics of InGaN/GaN light-emitting diodes (LEDs) and n -type ZnSe-based II–VI distributed Bragg reflectors combined by direct wafer bonding. Reflectivity and transmission electron microscopy (TEM) measurements were performed. The bonded sample exhibited a higher reflectivity at the wavelength of 510 nm than a control LED with an Al cap. Samples were bonded at 270°C for 60 min or at 650°C for 5 min. Cross-sectional TEM revealed a uniform wafer-bonded interface with no voids or cavities for the low temperature sample, while the sample bonded at a higher temperature was observed to have lens-shaped cavities at semiconductor interfaces.