Publications

Found 74 results
Author Title Type [ Year(Desc)]
Filters: Author is James S. Speck  [Clear All Filters]
2001
Acikel, B., P. J. Hansen, T. R. Taylor, A. S. Nagra, J. S. Speck, and R. A. York, "Tunable strontium titanate thin films for microwave devices", Integrated Ferroelectrics, vol. 39, pp. 291-298, 2001.
2003
Brandt, O., Y. Jun Sun, H-P. Schönherr, K. H. Ploog, P. Waltereit, S-H. Lim, and J. S. Speck, "Improved synthesis of (In,Ga)N/GaN multiple quantum wells by plasma-assisted molecular-beam epitaxy", Applied Physics Letters, vol. 83, pp. 90-92, 2003.
Wu, F., M. D. Craven, S-H. Lim, and J. S. Speck, "Polarity determination of a-plane GaN on r-plane sapphire and its effects on lateral overgrowth and heteroepitaxy", Journal of Applied Physics, vol. 94, pp. 942-947, 2003.
2005
Baker, T. J., B. A. Haskell, F. Wu, P. T. Fini, J. S. Speck, and S. Nakamura, "Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates", Japanese Journal of Applied Physics, vol. 44, pp. L920, 2005.
Murai, A., C. Kruse, K. Samonji, L. McCarthy, J. S. Speck, U. K. Mishra, S. P. DenBaars, and D. Hommel, "Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II–VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding", Japanese Journal of Applied Physics, vol. 44, pp. L958, 2005.
Chakraborty, A., T. J. Baker, B. A. Haskell, F. Wu, J. S. Speck, S. P. Denbaars>, S. Nakamura, and U. K. Mishra, "Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates", Japanese Journal of Applied Physics, vol. 44, pp. L945, 2005.
Moe, C. G., H. Masui, M. C. Schmidt, L. Shen, B. Moran, S. Newman, K. Vampola, T. Mates, S. Keller, J. S. Speck, et al., "Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide", Japanese Journal of Applied Physics, vol. 44, pp. L502, 2005.
2010
Da Lin, Y-., S. Yamamoto, C-Y. Huang, C-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes", Applied Physics Express, vol. 3, pp. 082001, 2010.
Metcalfe, G. D., H. Shen, M. Wraback, G. Koblmüller, C. Gallinat, F. Wu, and J. S. Speck, "Terahertz Radiation from Nonpolar InN Due to Drift in an Intrinsic In-Plane Electric Field", Applied Physics Express, vol. 3, pp. 092201, 2010.
2011
Farrell, R. M., D. A. Haeger, P. Shan Hsu, M. T. Hardy, K. M. Kelchner, K. Fujito, D. F. Feezell, U. K. Mishra, S. P. DenBaars, J. S. Speck, et al., "AlGaN-Cladding-Free m -Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers", Applied Physics Express, vol. 4, pp. 092105, 2011.
Singisetti, U., M. Hoi Wong, S. Dasgupta, J. S. Speck, and U. K. Mishra, "Enhancement-Mode N-Polar GaN Metal–Insulator–Semiconductor Field Effect Transistors with Current Gain Cutoff Frequency of 120 GHz", Applied Physics Express, vol. 4, pp. 024103, 2011.
2012
Hu, Y-L., S. Krämer, P. T. Fini, and J. S. Speck, "Atomic structure of prismatic stacking faults in nonpolar a-plane GaN epitaxial layers", Applied Physics Letters, vol. 101, pp. 112102, 2012.
2018
Malkowski, T. F., J. S. Speck, S. P. DenBaars, and S. Nakamura, "An exploratory study of acidic ammonothermal growth in a TZM autoclave at high temperatures", Journal of Crystal Growth, vol. 499, pp. 85 - 89, 2018.
Kimmel, A.-C.L., T. F. Malkowski, S. Griffiths, B. Hertweck, T. G. Steigerwald, L. P. Freund, S. Neumeier, M. Göken, J. S. Speck, and E. Schluecker, "High-temperature corrosion of Inconel®Alloy 718, Haynes®282®Alloy and CoWAlloy1&2 in supercritical ammonia/ammonium chloride solution", Journal of Crystal Growth, vol. 498, pp. 289 - 300, 2018.
Vogt, P., A. Mauze, F. Wu, B. Bonef, and J. S. Speck, "Metal-oxide catalyzed epitaxy (MOCATAXY): the example of the O plasma-assisted molecular beam epitaxy of β-(Al x Ga 1− x ) 2 O 3 /β-Ga 2 O 3 heterostructures", Applied Physics Express, vol. 11, pp. 115503, 2018.
Kuritzky, L. Y., C. Weisbuch, and J. S. Speck, "Prospects for 100% wall-plug efficient III-nitride LEDs", Opt. Express, vol. 26, pp. 16600–16608, Jun, 2018.
2019
Hamdy, K. W., E. C. Young, A. I. Alhassan, D. L. Becerra, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes", Opt. Express, vol. 27, pp. 8327–8334, Mar, 2019.
Fireman, M. N., G. L'Heureux, F. Wu, T. Mates, E. C. Young, and J. S. Speck, "High germanium doping of GaN films by ammonia molecular beam epitaxy", Journal of Crystal Growth, vol. 508, pp. 19 - 23, 2019.
Marcinkevičius, S., R. Yapparov, L. Y. Kuritzky, S. Nakamura, and J. S. Speck, "Impact of Barrier Height on the Interwell Carrier Transport in InGaN/(In)GaN Multiple Quantum Wells", Laser Congress 2019 (ASSL, LAC, LS&C): Optical Society of America, 2019.
Saifaddin, B. K., M. Iza, H. Foronda, A. Almogbel, C. J. Zollner, F. Wu, A. Alyamani, A. Albadri, S. Nakamura, S. P. DenBaars, et al., "Impact of roughening density on the light extraction efficiency of thin-film flip-chip ultraviolet LEDs grown on SiC", Opt. Express, vol. 27, pp. A1074–A1083, Aug, 2019.
Alreesh, M. Abo, P. Von Dollen, T. F. Malkowski, T. Mates, H. Albrithen, S. DenBaars, S. Nakamura, and J. S. Speck, "Investigation of oxygen and other impurities and their effect on the transparency of a Na flux grown GaN crystal", Journal of Crystal Growth, vol. 508, pp. 50 - 57, 2019.
Zhang, Y., A. Mauze, F. Alema, A. Osinsky, and J. S. Speck, "Near unity ideality factor for sidewall Schottky contacts on un-intentionally doped $\upbeta$-Ga2O3", Applied Physics Express, vol. 12, pp. 044005, mar, 2019.
Kamikawa, T., S. Gandrothula, M. Araki, H. Li, V. Bonito Oliva, F. Wu, D. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrate", Opt. Express, vol. 27, pp. 24717–24723, Aug, 2019.
Kang, C. Hong, G. Liu, C. Lee, O. Alkhazragi, J. M. Wagstaff, K-H. Li, F. Alhawaj, T. Khee Ng, J. S. Speck, S. Nakamura, et al., "Semipolar (202̅1̅) InGaN/GaN micro-photodetector for gigabit-per-second visible light communication", Applied Physics Express, vol. 13, pp. 014001, nov, 2019.
Mehari, S., D. A. Cohen, D. L. Becerra, H. Zhang, C. Weisbuch, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Semipolar III-nitride laser diodes for solid-state lighting", Novel In-Plane Semiconductor Lasers XVIII: International Society for Optics and Photonics, 2019.

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