Publications

Found 11 results
Author Title Type [ Year(Desc)]
Filters: Author is Singisetti, Uttam  [Clear All Filters]
1991
Singisetti, U., M. Hoi Wong, S. Dasgupta, J. S. Speck, and U. K. Mishra, "Proc. Bipolar Circuits and Technology Meet., 1991 Proc. Bipolar Circuits and Technology Meet., 1991 188, 1991", Proc. Bipolar Circuits and Technology Meet, vol. 188, 1991.
2010
Singisetti, U., M. Hoi Wong, S. Dasgupta, J. S. Speck, and U. K. Mishra, "Proc. Device Research Conf., 2010 Proc. Device Research Conf., 2010 155, 2010", Proc. Device Research Conf, vol. 155, 2010.
Singisetti, U., M. Hoi Wong, S. Dasgupta, B. L. Swenson, B. J. Thibeault, J. S. Speck, U. K. Mishra, and others, "Scalable E-mode N-polar GaN MISFET devices and process with self-aligned source/drain regrowth", Device Research Conference (DRC), 2010: IEEE, pp. 191–192, 2010.
2011
Wong, M. Hoi, U. Singisetti, J. Lu, J. S. Speck, and U. K. Mishra, "Anomalous output conductance in N-polar GaN-based MIS-HEMTs", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 211–212, 2011.
Singisetti, U., M. Hoi Wong, S. Dasgupta, J. S. Speck, and U. K. Mishra, "Enhancement-mode N-polar GaN metal–insulator–semiconductor field effect transistors with current gain cutoff frequency of 120 GHz", Applied physics express, vol. 4, no. 2: IOP Publishing, pp. 024103, 2011.
Singisetti, U., M. Hoi Wong, S. Dasgupta, B. Swenson, B. J. Thibeault, J. S. Speck, U. K. Mishra, and others, "Enhancement-mode N-polar GaN MISFETs with self-aligned source/drain regrowth", IEEE Electron Device Letters, vol. 32, no. 2: IEEE, pp. 137–139, 2011.
Dasgupta, S., D. F. Brown, U. Singisetti, S. Keller, J. S. Speck, U. K. Mishra, and others, "Self-aligned technology for N-polar GaN/Al (Ga) N MIS-HEMTs", IEEE Electron Device Letters, vol. 32, no. 1: IEEE, pp. 33–35, 2011.
2012
Wong, M. Hoi, U. Singisetti, J. Lu, J. S. Speck, and U. K. Mishra, "Anomalous output conductance in N-polar GaN high electron mobility transistors", IEEE Transactions on Electron Devices, vol. 59, no. 11: IEEE, pp. 2988–2995, 2012.
Singisetti, U., M. Hoi Wong, J. S. Speck, and U. K. Mishra, "Enhancement-Mode N-Polar GaN MOS-HFET With 5-nm GaN Channel, 510-mS/mm $ g_ ${$m$}$ $, and 0.66-$$\backslash$Omega$\backslash$cdot$\backslash$hbox ${$mm$}$ $ $ R_ ${$$\backslash$rm on$}$ $", IEEE Electron Device Letters, vol. 33, no. 1: IEEE, pp. 26–28, 2012.
2013
Wong, M. Hoi, S. Keller, S. Dasgupta Nidhi, D. J. Denninghoff, S. Kolluri, D. F. Brown, J. Lu, N. A. Fichtenbaum, E. Ahmadi, U. Singisetti, et al., "N-polar GaN epitaxy and high electron mobility transistors", Semiconductor Science and Technology, vol. 28, no. 7: IOP Publishing, pp. 074009, 2013.
2022
Green, A. J., J. Speck, G. Xing, P. Moens, F. Allerstam, K. Gumaelius, T. Neyer, A. Arias-Purdue, V. Mehrotra, A. Kuramata, et al., "β-Gallium oxide power electronics", APL Materials, vol. 10, 02, 2022.