Publications

Found 11 results
Author Title Type [ Year(Asc)]
Filters: Author is Choi, Soojeong  [Clear All Filters]
2013
Shivaraman, R., Y-R. Wu, S. Choi, R. Chung, and J. Speck, "Atom Probe Tomography of III-Nitrides Based Semiconducting Devices", Microscopy and Microanalysis, vol. 19, no. S2: Cambridge University Press, pp. 956–957, 2013.
Choi, S., F. Wu, O. Bierwagen, and J. S. Speck, "Polarity control and transport properties of Mg-doped (0001) InN by plasma-assisted molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 31, no. 3: AVS, pp. 031504, 2013.
2012
Hurni, C. A., S. Choi, O. Bierwagen, and J. S. Speck, "Coupling resistance between n-type surface accumulation layer and p-type bulk in InN: Mg thin films", Applied Physics Letters, vol. 100, no. 8: AIP, pp. 082106, 2012.
Bierwagen, O., S. Choi, and J. S. Speck, "Hall and Seebeck measurement of a p-n layer stack: Determining InN bulk hole transport properties in the presence of a strong surface electron accumulation layer", Physical Review B, vol. 85, no. 16: APS, pp. 165205, 2012.
Wong, M. Hoi, F. Wu, C. A. Hurni, S. Choi, J. S. Speck, and U. K. Mishra, "Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source", Applied Physics Letters, vol. 100, no. 7: AIP, pp. 072107, 2012.
Choi, S., F. Wu, R. Shivaraman, E. C. Young, and J. S. Speck, "Observation of columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy", Applied Physics Letters, vol. 100, no. 23: AIP, pp. 232102, 2012.
2011
Kaun, S. W., M. Hoi Wong, S. Dasgupta, S. Choi, R. Chung, U. K. Mishra, and J. S. Speck, "Device physics-024101 Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors", Applied Physics Express, vol. 4, no. 2, 2011.
Kaun, S. W., M. Hoi Wong, S. Dasgupta, S. Choi, R. Chung, U. K. Mishra, and J. S. Speck, "Effects of threading dislocation density on the gate leakage of AlGaN/GaN heterostructures for high electron mobility transistors", Applied physics express, vol. 4, no. 2: IOP Publishing, pp. 024101, 2011.
Mayer, M. A., S. Choi, O. Bierwagen, H. M. Smith III, E. E. Haller, J. S. Speck, and W. Walukiewicz, "Electrical and optical properties of p-type InN", Journal of Applied Physics, vol. 110, no. 12: AIP, pp. 123707, 2011.
Dasgupta, S., S. Choi, F. Wu, J. S. Speck, U. K. Mishra, and others, "Growth, structural, and electrical characterizations of N-polar InAlN by plasma-assisted molecular beam epitaxy", Applied physics express, vol. 4, no. 4: IOP Publishing, pp. 045502, 2011.
Bierwagen, O., S. Choi, and J. S. Speck, "Hall and Seebeck profiling: Determining surface, interface, and bulk electron transport properties in unintentionally doped InN", Physical Review B, vol. 84, no. 23: APS, pp. 235302, 2011.