Publications

Found 35 results
Author Title Type [ Year(Desc)]
Filters: Author is Bierwagen, Oliver  [Clear All Filters]
2008
Bierwagen, O., T. Ive, C. G. Van de Walle, and J. S. Speck, "Causes of incorrect carrier-type identification in van der Pauw–Hall measurements", Applied Physics Letters, vol. 93, no. 24: AIP, pp. 242108, 2008.
2009
Bierwagen, O., M. E. White, M-Y. Tsai, T. Nagata, and J. S. Speck, "Non-alloyed Schottky and ohmic contacts to as-grown and oxygen-plasma treated n-type SnO2 (110) and (101) thin films", Applied Physics Express, vol. 2, no. 10: IOP Publishing, pp. 106502, 2009.
Bierwagen, O., M. E. White, M-Y. Tsai, and J. S. Speck, "Plasma-assisted molecular beam epitaxy of high quality In 2 O 3 (001) thin films on Y-Stabilized ZrO 2 (001) using in as an auto surfactant", Applied Physics Letters, vol. 95, no. 26: AIP, pp. 262105, 2009.
Nagata, T., G. Koblmüller, O. Bierwagen, C. S. Gallinat, and J. S. Speck, "Surface structure and chemical states of a-plane and c-plane InN films", Applied Physics Letters, vol. 95, no. 13: AIP, pp. 132104, 2009.
2010
Bierwagen, O., and J. S. Speck, "High electron mobility In 2 O 3 (001) and (111) thin films with nondegenerate electron concentration", Applied Physics Letters, vol. 97, no. 7: AIP, pp. 072103, 2010.
Bierwagen, O., and J. S. Speck, "Nucleation of islands and continuous high-quality In 2 O 3 (001) films during plasma-assisted molecular beam epitaxy on Y-stabilized ZrO 2 (001)", Journal of Applied Physics, vol. 107, no. 11: AIP, pp. 113519, 2010.
Hurni, C. A., O. Bierwagen, J. R. Lang, B. M. McSkimming, C. S. Gallinat, E. C. Young, D. A. Browne, U. K. Mishra, and J. S. Speck, "pn junctions on Ga-face GaN grown by NH 3 molecular beam epitaxy with low ideality factors and low reverse currents", Applied Physics Letters, vol. 97, no. 22: AIP, pp. 222113, 2010.
Nagata, T., O. Bierwagen, M. E. White, M-Y. Tsai, and J. S. Speck, "Study of the Au Schottky contact formation on oxygen plasma treated n-type SnO 2 (101) thin films", Journal of Applied Physics, vol. 107, no. 3: AIP, pp. 033707, 2010.
White, M. E., O. Bierwagen, M-Y. Tsai, and J. S. Speck, "Synthesis and characterization of highly resistive epitaxial indium-doped SnO2", Applied physics express, vol. 3, no. 5: IOP Publishing, pp. 051101, 2010.
Tsai, M-Y., O. Bierwagen, M. E. White, and J. S. Speck, "β-Ga 2 O 3 growth by plasma-assisted molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 28, no. 2: AVS, pp. 354–359, 2010.
2011
Bierwagen, O., J. S. Speck, T. Nagata, T. Chikyow, Y. Yamashita, H. Yoshikawa, and K. Kobayashi, "Depletion of the In 2 O 3 (001) and (111) surface electron accumulation by an oxygen plasma surface treatment", Applied Physics Letters, vol. 98, no. 17: AIP, pp. 172101, 2011.
Mayer, M. A., S. Choi, O. Bierwagen, H. M. Smith III, E. E. Haller, J. S. Speck, and W. Walukiewicz, "Electrical and optical properties of p-type InN", Journal of Applied Physics, vol. 110, no. 12: AIP, pp. 123707, 2011.
Bierwagen, O., S. Choi, and J. S. Speck, "Hall and Seebeck profiling: Determining surface, interface, and bulk electron transport properties in unintentionally doped InN", Physical Review B, vol. 84, no. 23: APS, pp. 235302, 2011.
Chung, R. B., O. Bierwagen, F. Wu, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Semiconductors, dielectrics, and organic materials-101001 Temperature Dependent Capacitance-Voltage Analysis of Unintentionally Doped and Si Doped Al0. 82 In0. 18N Grown on GaN", Japanese Journal of Applied Physics, vol. 50, no. 10, 2011.
Chung, R. B., O. Bierwagen, F. Wu, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Temperature Dependent Capacitance–Voltage Analysis of Unintentionally Doped and Si Doped Al0. 82In0. 18N Grown on GaN", Japanese Journal of Applied Physics, vol. 50, no. 10R: IOP Publishing, pp. 101001, 2011.
2012
Hurni, C. A., S. Choi, O. Bierwagen, and J. S. Speck, "Coupling resistance between n-type surface accumulation layer and p-type bulk in InN: Mg thin films", Applied Physics Letters, vol. 100, no. 8: AIP, pp. 082106, 2012.
Bierwagen, O., T. Nagata, M. E. White, M-Y. Tsai, and J. S. Speck, "Electron transport in semiconducting SnO 2: Intentional bulk donors and acceptors, the interface, and the surface", Journal of Materials Research, vol. 27, no. 17: Cambridge University Press, pp. 2232–2236, 2012.
Bierwagen, O., S. Choi, and J. S. Speck, "Hall and Seebeck measurement of a p-n layer stack: Determining InN bulk hole transport properties in the presence of a strong surface electron accumulation layer", Physical Review B, vol. 85, no. 16: APS, pp. 165205, 2012.
Bierwagen, O., and J. S. Speck, "Mg acceptor doping of In2O3 and overcompensation by oxygen vacancies", Applied Physics Letters, vol. 101, no. 10: AIP, pp. 102107, 2012.
2013
Preissler, N., O. Bierwagen, A. T. Ramu, and J. S. Speck, "Electrical transport, electrothermal transport, and effective electron mass in single-crystalline In 2 O 3 films", Physical Review B, vol. 88, no. 8: APS, pp. 085305, 2013.
Bierwagen, O., M. E. White, M-Y. Tsai, and J. S. Speck, "MBE of transparent semiconducting oxides", Molecular Beam Epitaxy, pp. 347–367, 2013.
Choi, S., F. Wu, O. Bierwagen, and J. S. Speck, "Polarity control and transport properties of Mg-doped (0001) InN by plasma-assisted molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 31, no. 3: AVS, pp. 031504, 2013.
Preissler, N., O. Bierwagen, A. T. Ramu, and J. S. Speck, "The Seebeck coefficient of In 2 O 3-Inferences on causes of unintentional conductivity and electron effective mass", Verhandlungen der Deutschen Physikalischen Gesellschaft, 2013.
2014
Feneberg, M., C. Lidig, K. Lange, M. E. White, M. Y. Tsai, J. S. Speck, O. Bierwagen, and R. Goldhahn, "Anisotropy of the electron effective mass in rutile SnO2 determined by infrared ellipsometry", physica status solidi (a), vol. 211, no. 1: Wiley Online Library, pp. 82–86, 2014.
Mogilatenko, A., H. Kirmse, O. Bierwagen, M. Schmidbauer, M-Y. Tsai, I. Häusler, M. E. White, and J. S. Speck, "Effect of heavy Ga doping on defect structure of SnO2 layers", physica status solidi (a), vol. 211, no. 1: Wiley Online Library, pp. 87–92, 2014.

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