Publications

Found 632 results
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1998
Fini, P., X. Wu, EJ. Tarsa, Y. Golan, V. Srikant, S. Keller, SP. DenBaars, and JS. Speck, "Structure and Mechanical and Thermal Properties of Condensed Matter-The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganic Chemical Vapor", Japanese Journal of Applied Physics-Part 1 Regular Papers and Short Notes, vol. 37, no. 8: Tokyo, Japan: Publication Board, Japanese Journal of Applied Physics, c1982-, pp. 4460–4466, 1998.
1997
Derouin, TA., CDE. Lakeman, XH. Wu, JS. Speck, and FF. Lange, "Effect of lattice mismatch on the epitaxy of sol-gel LiNbO 3 thin films", Journal of materials research, vol. 12, no. 5: Cambridge University Press, pp. 1391–1400, 1997.
Tarsa, EJ., B. Heying, XH. Wu, P. Fini, SP. DenBaars, and JS. Speck, "Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy", Journal of applied physics, vol. 82, no. 11: AIP, pp. 5472–5479, 1997.
Docter, DP., JJ. Brown, M. Hu, M. Matloubian, J. Speck, X. Wu, and DE. Grider, "InzAl1- zAs/InyGa1- yAs lattice constant engineered HEMTs on GaAs", Solid-State Electronics, vol. 41, no. 10: Pergamon, pp. 1629–1634, 1997.
Sung, T., G. Popovici, MA. Prelas, RG. Wilson, SK. Loyalka, T. Lou, G. Fan, B. Ding, Z. Hu, AT. Chien, et al., "JMR Abstracts", MRS BULLETIN, pp. 85, 1997.
DenBaars, SP., P. Kozodoy, S. Keller, MP. Mack, A. Abare, X. Wu, JS. Speck, and UK. Mishra, "MOCVD Growth of Group-III Nitrides for High Quality Photonic Devices", OPTOELECTRONICS & COMMUNICATIONS CONFERENCE, vol. 2, pp. 48–49, 1997.
1996
Sink, RK., S. Keller, BP. Keller, DI. Babić, AL. Holmes, D. Kapolnek, XH. Wu, JS. Speck, SP. DenBaars, and JE. Bowers, "Cleaved facets in GaN by wafer fusion of GaN to InP", MRS Online Proceedings Library Archive, vol. 421: Cambridge University Press, 1996.
Sink, RK., S. Keller, BP. Keller, D. I. Babić, AL. Holmes, D. Kapolnek, SP. DenBaars, JE. Bowers, XH. Wu, and JS. Speck, "Cleaved GaN facets by wafer fusion of GaN to InP", Applied physics letters, vol. 68, no. 15: AIP, pp. 2147–2149, 1996.
Allemann, JA., Y. Xia, RE. Morriss, AP. Wilkinson, H. Eckert, JS. Speck, CG. Levi, FF. Lange, and S. Anderson, "Crystallization behavior of Li 1–5x Ta 1+ x O 3 glasses synthesized from liquid precursors", Journal of materials research, vol. 11, no. 9: Cambridge University Press, pp. 2376–2387, 1996.
Wu, XH., LM. Brown, D. Kapolnek, S. Keller, B. Keller, SP. DenBaars, and JS. Speck, "Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al2O3", Journal of applied physics, vol. 80, no. 6: AIP, pp. 3228–3237, 1996.
Wu, X. H., L. M. Brown, D. Kapolnek, S. Keller, B. Keller, S. DenBaars, and J. Speck, "Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3", Journal of Applied Physics, vol. 80, pp. 3228 - 3237, 10, 1996.
Keller, S., D. Kapolnek, B. P. Keller, Y. Wu, B. Heying, J. S. Speck, U. K. Mishra, and S. P. DenBaars, "Effect of the trimethylgallium flow during nucleation layer growth on the properties of GaN grown on sapphire", Japanese journal of applied physics, vol. 35, no. 3A: IOP Publishing, pp. L285, 1996.
Speck, JS., DK. Fork, RM. Wolf, and T. Shiosaki, Epitaxial oxide thin films 2: Materials Research Society, Pittsburgh, PA (United States), 1996.
Mulpuri, RP., VK. Sarin, L. Zhao, AT. Chien, FF. Lange, JS. Speck, KM. Wang, BR. Shi, PJ. Ding, W. Wang, et al., "iJMR Abstracts", MRS BULLETIN: Cambridge Univ Press, 1996.
Mulpuri, RP., VK. Sarin, L. Zhao, AT. Chien, FF. Lange, JS. Speck, KM. Wang, BR. Shi, PJ. Ding, W. Wang, et al., "iJMR Abstracts", MRS BULLETIN: Cambridge Univ Press, 1996.
Chen, C-H., E. L. Hu, U. K. Mishra, J. P. Ibbetson, X. Wu, and J. S. Speck, "Improvement in low energy ion-induced damage with a low temperature GaAs capping layer", Applied physics letters, vol. 69, no. 12: AIP, pp. 1728–1730, 1996.
Keller, S., BP. Keller, Y-F. Wu, B. Heying, D. Kapolnek, JS. Speck, UK. Mishra, and SP. DenBaars, "Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 68, no. 11: AIP, pp. 1525–1527, 1996.
Wu, XH., P. Fini, S. Keller, EJ. Tarsa, B. Heying, UK. Mishra, SP. DenBaars, and JS. Speck, "Morphological and structural transitions in GaN films grown on sapphire by metal-organic chemical vapor deposition", Japanese journal of applied physics, vol. 35, no. 12B: IOP Publishing, pp. L1648, 1996.
Wu, XH., D. Kapolnek, EJ. Tarsa, B. Heying, S. Keller, BP. Keller, UK. Mishra, SP. DenBaars, and JS. Speck, "Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN", Applied physics letters, vol. 68, no. 10: AIP, pp. 1371–1373, 1996.
Wu, XH., D. Kapolnek, and JS. Speck, The role of mixed cubic/hexagonal nucleation layers on threading dislocation reduction in epitaxial GaN films: San Francisco Press, Inc., San Francisco, CA (United States), 1996.
Heying, B., XH. Wu, S. Keller, Y. Li, D. Kapolnek, BP. Keller, S. P. DenBaars, and JS. Speck, "Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films", Applied physics letters, vol. 68, no. 5: AIP, pp. 643–645, 1996.
Heying, B., X. H. Wu, S. Keller, Y. Li, D. Kapolnek, B. P. Keller, S. P. DenBaars, and J. S. Speck, "Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films", Applied Physics Letters, vol. 68, pp. 643-645, 1996.
1995
Tarsa, EJ., XH. Wu, JP. Ibbetson, JS. Speck, and JJ. Zinck, "Growth of epitaxial MgO films on Sb-passivated (001) GaAs: Properties of the MgO/GaAs interface", Applied physics letters, vol. 66, no. 26: AIP, pp. 3588–3590, 1995.
Keller, BP., S. Keller, D. Kapolnek, WN. Jiang, YF. Wu, H. Masui, X. Wu, B. Heying, JS. Speck, UK. Mishra, et al., "Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN", Journal of electronic materials, vol. 24, no. 11: Springer-Verlag, pp. 1707–1709, 1995.
Keller, BP., S. Keller, D. Kapolnek, WN. Jiang, YF. Wu, H. Masui, X. Wu, B. Heying, JS. Speck, UK. Mishra, et al., "Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN", Journal of electronic materials, vol. 24, no. 11: Springer-Verlag, pp. 1707–1709, 1995.

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