| Title | Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy |
| Publication Type | Journal Article |
| Year of Publication | 1997 |
| Authors | Tarsa, EJ., B. Heying, XH. Wu, P. Fini, SP. DenBaars, and JS. Speck |
| Journal | Journal of applied physics |
| Volume | 82 |
| Pagination | 5472–5479 |