Publications
Found 632 results
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, "Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier", Device Research Conference, 2008: IEEE, pp. 201–202, 2008.
, "Preface: phys. stat. sol.(c) 5/6", physica status solidi (c), vol. 5, no. 6: Wiley Online Library, pp. 1472–1474, 2008.
, "Semiconductor, superconductor, spintronic, dielectric, and organic materials-Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment", Applied Physics Express, vol. 1, no. 6, pp. 61101, 2008.
, "Status and perspectives of the ammonothermal growth of GaN substrates", Journal of Crystal Growth, vol. 310, no. 5: Elsevier, pp. 876–880, 2008.
, "Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors", Journal of Applied Physics, vol. 103, no. 9: AIP, pp. 093529, 2008.
, "Study of interface barrier of SiN x/GaN interface for nitrogen-polar GaN based high electron mobility transistors", Journal of Applied Physics, vol. 103, no. 12: AIP, pp. 124508, 2008.
, "Submicron-thick microcavity InGaN light emitting diodes", Light-Emitting Diodes: Research, Manufacturing, and Applications XII, vol. 6910: International Society for Optics and Photonics, pp. 69100R, 2008.
, "Submicron-thick microcavity InGaN light emitting diodes [6910-27]", PROCEEDINGS-SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, vol. 6910: International Society for Optical Engineering; 1999, pp. 6910, 2008.
, "Terahertz emission from nonpolar gallium nitride", Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on: IEEE, pp. 1–2, 2008.
, "Time-resolved optical studies of InGaN LED structures grown on semipolar and nonpolar bulk GaN substrates", Conference on Lasers and Electro-Optics: Optical Society of America, pp. CMAA1, 2008.
, "Comparison of time-resolved photoluminescence from InGaN single quantum wells grown on nonpolar and semipolar bulk GaN substrates", physica status solidi (c), vol. 6, no. S2: WILEY-VCH Verlag, 2009.
, "Current-induced spin polarization in gallium nitride", Applied Physics Letters, vol. 95, no. 7: AIP, pp. 072110, 2009.
, "Determination of polarization field in a semipolar (11 2\= 2) In Ga/ Ga N single quantum well using Franz–Keldysh oscillations in electroreflectance", Applied Physics Letters, vol. 94, no. 24: AIP, pp. 241906, 2009.
, "Electrical and electrothermal transport in InN: The roles of defects", Physica B: Condensed Matter, vol. 404, no. 23-24: North-Holland, pp. 4862–4865, 2009.
, "Electroluminescent measurement of the internal quantum efficiency of light emitting diodes", Applied Physics Letters, vol. 94, no. 18: AIP, pp. 181102, 2009.
, "Electron transport properties of antimony doped Sn O 2 single crystalline thin films grown by plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 106, no. 9: AIP, pp. 093704, 2009.
, "GaN-based embedded 2D photonic crystal LEDs: Numerical optimization and device characterization", physica status solidi (c), vol. 6, no. S2: WILEY-VCH Verlag, 2009.
, "GaN-based embedded 2D photonic crystal LEDs: Numerical optimization and device characterization", physica status solidi (c), vol. 6, no. S2: WILEY-VCH Verlag, 2009.
, "Growth of embedded photonic crystals for GaN-based optoelectronic devices", Journal of Applied Physics, vol. 106, no. 2: AIP, pp. 024309, 2009.
, "Growth of embedded photonic crystals for GaN-based optoelectronic devices", Journal of Applied Physics, vol. 106, no. 2: AIP, pp. 024309, 2009.
, "Growth of high quality N-polar AlN (000 1) on Si (111) by plasma assisted molecular beam epitaxy", Applied Physics Letters, vol. 94, no. 15: AIP, pp. 151906, 2009.
, "High performance MBE-grown N-face microwave GaN HEMTs with> 70% PAE", Device Research Conference, 2009. DRC 2009: IEEE, pp. 157–158, 2009.
, "High power N-face GaN high electron mobility transistors grown by molecular beam epitaxy with optimization of AlN nucleation", Applied Physics Letters, vol. 94, no. 18: AIP, pp. 182103, 2009.
, "High-performance N-face GaN microwave MIS-HEMTs with> 70% power-added efficiency", IEEE Electron Device Letters, vol. 30, no. 8: IEEE, pp. 802–804, 2009.
, "In adlayer mediated molecular beam epitaxial growth and properties of a-plane InN on freestanding GaN", Applied Physics Letters, vol. 94, no. 9: AIP, pp. 091905, 2009.