Publications

Found 632 results
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2020
Khoury, M., H. Li, B. Bonef, T. Mates, F. Wu, P. Li, M. S. Wong, H. Zhang, J. Song, J. Choi, et al., "560 nm InGaN micro-LEDs on low-defect-density and scalable (202̅1) semipolar GaN on patterned sapphire substrates", Opt. Express, vol. 28, pp. 18150–18159, Jun, 2020.
Alkhazragi, O., C. H. Kang, M. Kong, G. Liu, C. Lee, K. Li, H. Zhang, J. M. Wagstaff, F. Alhawaj, T. K. Ng, et al., "7.4-Gbit/s Visible-Light Communication Utilizing Wavelength-Selective Semipolar Micro-Photodetector", IEEE Photonics Technology Letters, vol. 32, pp. 767-770, 2020.
SaifAddin, B. K., A. S. Almogbel, C. J. Zollner, F. Wu, B. Bonef, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "AlGaN Deep-Ultraviolet Light-Emitting Diodes Grown on SiC Substrates", ACS Photonics, 2020.
Lynsky, C., A. I. Alhassan, G. Lheureux, B. Bonef, S. P. DenBaars, S. Nakamura, Y-R. Wu, C. Weisbuch, and J. S. Speck, "Barriers to carrier transport in multiple quantum well nitride-based $c$-plane green light emitting diodes", Phys. Rev. Materials, vol. 4, pp. 054604, May, 2020.
Lynsky, C., A. I. Alhassan, G. Lheureux, B. Bonef, S. P. DenBaars, S. Nakamura, Y-R. Wu, C. Weisbuch, and J. S. Speck, "Barriers to carrier transport in multiple quantum well nitride-based $c$-plane green light emitting diodes", Phys. Rev. Materials, vol. 4, pp. 054604, May, 2020.
Smith, J. M., R. Ley, M. S. Wong, Y. Hyun Baek, J. Hun Kang, C. Hon Kim, M. J. Gordon, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Comparison of size-dependent characteristics of blue and green InGaN microLEDs down to 1 μm in diameter", Applied Physics Letters, vol. 116, pp. 071102, 2020.
Chow, Y. Chao, C. Lee, M. S. Wong, Y-R. Wu, S. Nakamura, S. P. DenBaars, J. E. Bowers, and J. S. Speck, "Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors", Opt. Express, vol. 28, pp. 23796–23805, Aug, 2020.
Chow, Y. Chao, C. Lee, M. S. Wong, Y-R. Wu, S. Nakamura, S. P. DenBaars, J. E. Bowers, and J. S. Speck, "Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors", Opt. Express, vol. 28, pp. 23796–23805, Aug, 2020.
Li, H., H. Zhang, P. Li, M. S. Wong, Y. Chao Chow, S. Pinna, J. Klamkin, P. DeMierry, J. S. Speck, S. Nakamura, et al., "Development of efficient semipolar InGaN long wavelength light-emitting diodes and blue laser diodes grown on a high quality semipolar GaN/sapphire template", Journal of Physics: Photonics, vol. 2, pp. 031003, jun, 2020.
Li, H., P. Li, H. Zhang, Y. Chao Chow, M. S. Wong, S. Pinna, J. Klamkin, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Electrically driven, polarized, phosphor-free white semipolar (20-21) InGaN light-emitting diodes grown on semipolar bulk GaN substrate", Opt. Express, vol. 28, pp. 13569–13575, Apr, 2020.
Wurm, C., E. Ahmadi, F. Wu, N. Hatui, S. Keller, J. Speck, and U. Mishra, "Growth of high-quality N-polar GaN on bulk GaN by plasma-assisted molecular beam epitaxy", Solid State Communications, vol. 305, pp. 113763, 2020.
Wurm, C., E. Ahmadi, F. Wu, N. Hatui, S. Keller, J. Speck, and U. Mishra, "Growth of high-quality N-polar GaN on bulk GaN by plasma-assisted molecular beam epitaxy", Solid State Communications, vol. 305, pp. 113763, 2020.
Aleksiejūnas, R., K. Nomeika, O. Kravcov, S. Nargelas, L. Kuritzky, C. Lynsky, S. Nakamura, C. Weisbuch, and J. S. Speck, "Impact of Alloy-Disorder-Induced Localization on Hole Diffusion in Highly Excited c-Plane and m-Plane InGaN Quantum Wells", Phys. Rev. Applied, vol. 14, pp. 054043, Nov, 2020.
Wong, M. S., J. A. Kearns, C. Lee, J. M. Smith, C. Lynsky, G. Lheureux, H. Choi, J. Kim, C. Kim, S. Nakamura, et al., "Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments", Opt. Express, vol. 28, pp. 5787–5793, Feb, 2020.
Marcinkevičius, S., R. Yapparov, L. Y. Kuritzky, Y-R. Wu, S. Nakamura, and J. S. Speck, "Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport", Phys. Rev. B, vol. 101, pp. 075305, Feb, 2020.
Mauze, A., Y. Zhang, T. Itoh, F. Wu, and J. S. Speck, "Metal oxide catalyzed epitaxy (MOCATAXY) of β-Ga2O3 films in various orientations grown by plasma-assisted molecular beam epitaxy", APL Materials, vol. 8, pp. 021104, 2020.
Farzana, E., J. Wang, M. Monavarian, T. Itoh, K. S. Qwah, Z. J. Biegler, K. F. Jorgensen, and J. S. Speck, "Over 1 kV Vertical GaN-on-GaN p-n Diodes With Low On-Resistance Using Ammonia Molecular Beam Epitaxy", IEEE Electron Device Letters, vol. 41, pp. 1806-1809, 2020.
Khoury, M., H. Li, P. Li, Y. Chao Chow, B. Bonef, H. Zhang, M. S. Wong, S. Pinna, J. Song, J. Choi, et al., "Polarized monolithic white semipolar (202̅1) InGaN light-emitting diodes grown on high quality (202̅1) GaN/sapphire templates and its application to visible light communication", Nano Energy, vol. 67, pp. 104236, 2020.
Bonef, B., C. E. Reilly, F. Wu, S. Nakamura, S. P. DenBaars, S. Keller, and J. S. Speck, "Quantitative investigation of indium distribution in InN wetting layers and dots grown by metalorganic chemical vapor deposition", Applied Physics Express, vol. 13, pp. 065005, may, 2020.
Li, P., H. Zhang, H. Li, M. Iza, Y. Yao, M. S. Wong, N. Palmquist, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition", Opt. Express, vol. 28, pp. 18707–18712, Jun, 2020.
Poliani, E., D. Seidlitz, M. Ries, S. J. Choi, J. S. Speck, A. Hoffmann, and M. R. Wagner, "Strong Near-Field Light–Matter Interaction in Plasmon-Resonant Tip-Enhanced Raman Scattering in Indium Nitride", The Journal of Physical Chemistry C, vol. 124, pp. 28178-28185, 2020.
Monavarian, M., J. Xu, M. N. Fireman, N. Nookala, F. Wu, B. Bonef, K. S. Qwah, E. C. Young, M. A. Belkin, and J. S. Speck, "Structural and optical properties of nonpolar m- and a-plane GaN/AlGaN heterostructures for narrow-linewidth mid-infrared intersubband transitions", Applied Physics Letters, vol. 116, pp. 201103, 2020.
Zollner, C. J., A. S. Almogbel, Y. Yao, M. Wang, M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Superlattice hole injection layers for UV LEDs grown on SiC", Opt. Mater. Express, vol. 10, pp. 2171–2180, Sep, 2020.
Qwah, K. S., M. Monavarian, G. Lheureux, J. Wang, Y.-R. Wu, and J. S. Speck, "Theoretical and experimental investigations of vertical hole transport through unipolar AlGaN structures: Impacts of random alloy disorder", Applied Physics Letters, vol. 117, pp. 022107, 2020.
Qwah, K. S., M. Monavarian, G. Lheureux, J. Wang, Y.-R. Wu, and J. S. Speck, "Theoretical and experimental investigations of vertical hole transport through unipolar AlGaN structures: Impacts of random alloy disorder", Applied Physics Letters, vol. 117, pp. 022107, 2020.

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