Publications

Found 69 results
Author Title Type [ Year(Desc)]
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2017
Cramer, R. C., B. Bonef, J. English, C. E. Dreyer, C. G. Van de Walle, and J. S. Speck, "Growth of coherent BGaN films using BBr3 gas as a boron source in plasma assisted molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 35, no. 4: AVS, pp. 041509, 2017.
Rolland, N., F. Vurpillot, S. Duguay, B. Mazumder, J. S. Speck, and D. Blavette, "New Atom Probe Tomography Reconstruction Algorithm for Multilayered Samples: Beyond the Hemispherical Constraint", Microscopy and Microanalysis, vol. 23, no. 2: Cambridge University Press, pp. 247–254, 2017.
Vurpillot, F., D. Zanuttini, S. Parviainen, B. Mazumder, N. Rolland, C. Hatzoglou, and J. S. Speck, "Reconstructing APT Datasets: Challenging the Limits of the Possible", Microscopy and Microanalysis, vol. 23, no. S1: Cambridge University Press, pp. 640–641, 2017.
2018
Vogt, P., A. Mauze, F. Wu, B. Bonef, and J. S. Speck, "Metal-oxide catalyzed epitaxy (MOCATAXY): the example of the O plasma-assisted molecular beam epitaxy of β-(Al x Ga 1− x ) 2 O 3 /β-Ga 2 O 3 heterostructures", Applied Physics Express, vol. 11, pp. 115503, 2018.
Peelaers, H., J. B. Varley, J. S. Speck, and C. G. Van de Walle, "Structural and electronic properties of Ga2O3-Al2O3 alloys", Applied Physics Letters, vol. 112, pp. 242101, 2018.
Peelaers, H., J. B. Varley, J. S. Speck, and C. G. Van de Walle, "Structural and electronic properties of Ga2O3-Al2O3 alloys", Applied Physics Letters, vol. 112, pp. 242101, 2018.
2019
Khoury, M., H. Li, H. Zhang, B. Bonef, M. S. Wong, F. Wu, D. Cohen, P. De Mierry, P. Vennéguès, J. S. Speck, et al., "Demonstration of Electrically Injected Semipolar Laser Diodes Grown on Low-Cost and Scalable Sapphire Substrates", ACS Applied Materials & Interfaces, vol. 11, pp. 47106-47111, 2019.
Farzana, E., A. Mauze, J. B. Varley, T. E. Blue, J. S. Speck, A. R. Arehart, and S. A. Ringel, "Influence of neutron irradiation on deep levels in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy", APL Materials, vol. 7, pp. 121102, 2019.
Alreesh, M. Abo, P. Von Dollen, T. F. Malkowski, T. Mates, H. Albrithen, S. DenBaars, S. Nakamura, and J. S. Speck, "Investigation of oxygen and other impurities and their effect on the transparency of a Na flux grown GaN crystal", Journal of Crystal Growth, vol. 508, pp. 50 - 57, 2019.
Alema, F., Y. Zhang, A. Osinsky, N. Valente, A. Mauze, T. Itoh, and J. S. Speck, "Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3", APL Materials, vol. 7, pp. 121110, 2019.
Alema, F., B. Hertog, P. Mukhopadhyay, Y. Zhang, A. Mauze, A. Osinsky, W. V. Schoenfeld, J. S. Speck, and T. Vogt, "Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film", APL Materials, vol. 7, pp. 022527, 2019.
2020
Alema, F., Y. Zhang, A. Osinsky, N. Orishchin, N. Valente, A. Mauze, and J. S. Speck, "Low 10^14  cm−3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD", APL Materials, vol. 8, pp. 021110, 2020.
2021
Monavarian, M., J. Xu, M. Khoury, F. Wu, P. De Mierry, P. Vennéguès, M. A. Belkin, and J. S. Speck, "Defect Tolerance of Intersubband Transitions in Nonpolar $\mathrmGa\mathrmN/(\mathrmAl,\mathrmGa)\mathrmN$ Heterostructures: A Path toward Low-Cost and Scalable Mid- to Far-Infrared Optoelectronics", Phys. Rev. Appl., vol. 16, pp. 054040, Nov, 2021.
Mauze, A., Y. Zhang, T. Itoh, T. E. Mates, H. Peelaers, C. G. Van de Walle, and J. S. Speck, "Mg doping and diffusion in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 130, 12, 2021.
Shi, J., A. Krishnan, A. F. M. Anha Bhuiyan, Y. Rui Koh, K. Huynh, A. Mauze, S. Mu, B. M. Foley, H. Ahmad, T. Itoh, et al., "Thermal Transport Across Al-(AlxGa1-x)2O3 and Al-Ga2O3 Interfaces", International Electronic Packaging Technical Conference and Exhibition, vol. ASME 2021 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, 10, 2021.
2022
Alema, F., T. Itoh, S. Vogt, J. S. Speck, and A. Osinsky, "Highly conductive epitaxial β-Ga2O3 and β-(AlxGa1−x)2O3 films by MOCVD", Japanese Journal of Applied Physics, vol. 61, pp. 100903, sep, 2022.
Mukhopadhyay, P., I. Hatipoglu, Y. K. Frodason, J. B. Varley, M. S. Williams, D. A. Hunter, N. K. Gunasekar, P. R. Edwards, R. W. Martin, F. Wu, et al., "Role of defects in ultra-high gain in fast planar tin gallium oxide UV-C photodetector by MBE", Applied Physics Letters, vol. 121, 09, 2022.
2023
Mickevičius, J., E. Valkiūnaitė, Ž. Podlipskas, K. Nomeika, S. Nargelas, G. Tamulaitis, Y.C. Chow, S. Nakamura, J.S. Speck, C. Weisbuch, et al., "Dynamics of double-peak photoluminescence in m-plane InGaN/GaN MQWs", Journal of Luminescence, vol. 257, pp. 119732, 2023.
Wang, M., S. Mu, J. S. Speck, and C. G. Van de Walle, "First-Principles Study of Twin Boundaries and Stacking Faults in Beta-Ga2O3", Advanced Materials Interfaces, 2023.

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