Publications

Found 2098 results
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2013
Mazumder, B., X. Liu, UK. Mishra, and JS. Speck, "3D Characterization Study of High-k Dielectric on GaN Using Atom Probe Tomography", Microscopy and Microanalysis, vol. 19, no. S2: Cambridge University Press, pp. 1026–1027, 2013.
Poblenz, C., J. S. Speck, and D. S. Kamber, Ammonothermal method for growth of bulk gallium nitride, 2013.
Pimputkar, S., P. Von Dollen, S. Nakamura, and J. S. Speck, Apparatus used for the growth of group-iii nitride crystals utilizing carbon fiber containing materials and group-iii nitride grown therewith, 2013.
Mazumder, B., S. W. Kaun, J. Lu, S. Keller, U. K. Mishra, and J. S. Speck, "Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures", Applied Physics Letters, vol. 102, no. 11: AIP, pp. 111603, 2013.
Mazumder, B., S. W. Kaun, J. Lu, S. Keller, U. K. Mishra, and J. S. Speck, "Atom probe characterization of an AlN interlayer within HEMT structures grown by molecular beam epitaxy and metal-organic chemical vapor deposition", Bulletin of the American Physical Society, vol. 58: American Physical Society, 2013.
Shivaraman, R., Y-R. Wu, S. Choi, R. Chung, and J. Speck, "Atom Probe Tomography of III-Nitrides Based Semiconducting Devices", Microscopy and Microanalysis, vol. 19, no. S2: Cambridge University Press, pp. 956–957, 2013.
Shivaraman, R., Y-R. Wu, S. Choi, R. Chung, and J. Speck, "Atom Probe Tomography of III-Nitrides Based Semiconducting Devices", Microscopy and Microanalysis, vol. 19, no. S2: Cambridge University Press, pp. 956–957, 2013.
Bryant, B. N., E. C. Young, F. Wu, K. Fujito, S. Nakamura, and J. S. Speck, "Basal Plane Stacking Fault Suppression by Nitrogen Carrier Gas in m-plane GaN Regrowth by Hydride Vapor Phase Epitaxy", Applied Physics Express, vol. 6, no. 11: IOP Publishing, pp. 115502, 2013.
Hsu, P. Shan, F. Wu, E. C. Young, A. E. Romanov, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Blue and aquamarine stress-relaxed semipolar (11 2\= 2) laser diodes", Applied Physics Letters, vol. 103, no. 16: AIP, pp. 161117, 2013.
Mazumder, B., M. Esposto, T. H. Hung, T. Mates, S. Rajan, and J. S. Speck, "Characterization of a dielectric/GaN system using atom probe tomography", Applied Physics Letters, vol. 103, no. 15: AIP, pp. 151601, 2013.
Nakamura, S., J. S. Speck, S. P. DenBaars, and A. Tyagi, Cleaved facet (Ga, Al, In) N edge-emitting laser diodes grown on semipolar bulk gallium nitride substrates, 2013.
Shivaraman, R., Y. Kawaguchi, S. Tanaka, SP. DenBaars, S. Nakamura, and JS. Speck, "Comparative analysis of 20 2\= 1 and 20 2\= 1\= semipolar GaN light emitting diodes using atom probe tomography", Applied Physics Letters, vol. 102, no. 25: AIP, pp. 251104, 2013.
Shivaraman, R., Y. Kawaguchi, S. Tanaka, SP. DenBaars, S. Nakamura, and JS. Speck, "Comparative analysis of 20 2\= 1 and 20 2\= 1\= semipolar GaN light emitting diodes using atom probe tomography", Applied Physics Letters, vol. 102, no. 25: AIP, pp. 251104, 2013.
Hsu, P. Shan, R. M. Farrell, J. J. Weaver, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Comparison of Polished and Dry Etched Semipolar $(11$\backslash$bar ${$2$}$ 2) $ III-Nitride Laser Facets", IEEE Photonics Technology Letters, vol. 25, no. 21: IEEE, pp. 2105–2107, 2013.
Von Dollen, P., J. S. Speck, and S. Pimputkar, Crystal growth using non-thermal atmospheric pressure plasmas, 2013.
Holder, C., D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Demonstration of nonpolar GaN-based vertical-cavity surface-emitting lasers", Vertical-Cavity Surface-Emitting Lasers XVII, vol. 8639: International Society for Optics and Photonics, pp. 863906, 2013.
Hardy, M., C. O. Holder, S. Nakamura, J. S. Speck, D. A. Cohen, and S. P. DenBaars, "Demonstration of True Green ITO Clad Semipolar (202Ø1) InGaN/GaN Laser Diodes", CLEO: Science and Innovations: Optical Society of America, pp. CF1F–1, 2013.
Hardy, M. T., C. O. Holder, S. Nakamura, J. S. Speck, D. A. Cohen, and S. P. DenBaars, "Demonstration of true green ITO clad semipolar InGaN/GaN laser diodes", Lasers and Electro-Optics (CLEO), 2013 Conference on: IEEE, pp. 1–2, 2013.
Kawaguchi, Y., S-C. Huang, R. M. Farrell, Y. Zhao, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Dependence of electron overflow on emission wavelength and crystallographic orientation in single-quantum-well III–nitride light-emitting diodes", Applied Physics Express, vol. 6, no. 5: IOP Publishing, pp. 052103, 2013.
Farell, R. M., E. C. Young, F. Wu, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Development of high-performance nonpolar III-nitride light-emitting devices", Electronics, Communications and Photonics Conference (SIECPC), 2013 Saudi International: IEEE, pp. 1–8, 2013.
Iveland, J., L. Martinelli, J. Peretti, J. S. Speck, and C. Weisbuch, "Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop", Physical review letters, vol. 110, no. 17: American Physical Society, pp. 177406, 2013.
Schaake, C. A., D. F. Brown, B. L. Swenson, S. Keller, J. S. Speck, and U. K. Mishra, "A donor-like trap at the InGaN/GaN interface with net negative polarization and its possible consequence on internal quantum efficiency", Semiconductor Science and Technology, vol. 28, no. 10: IOP Publishing, pp. 105021, 2013.
Schaake, C. A., D. F. Brown, B. L. Swenson, S. Keller, J. S. Speck, and U. K. Mishra, "A donor-like trap at the InGaN/GaN interface with net negative polarization and its possible consequence on internal quantum efficiency", Semiconductor Science and Technology, vol. 28, no. 10: IOP Publishing, pp. 105021, 2013.
Schaake, C. A., D. F. Brown, B. L. Swenson, S. Keller, J. S. Speck, and U. K. Mishra, "A donor-like trap at the InGaN/GaN interface with net negative polarization and its possible consequence on internal quantum efficiency", Semiconductor Science and Technology, vol. 28, no. 10: IOP Publishing, pp. 105021, 2013.
Preissler, N., O. Bierwagen, A. T. Ramu, and J. S. Speck, "Electrical transport, electrothermal transport, and effective electron mass in single-crystalline In 2 O 3 films", Physical Review B, vol. 88, no. 8: APS, pp. 085305, 2013.

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