Publications
Found 2098 results
Author Title Type [ Year
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, "Defect reduction in nonpolar a-plane GaN films using in situ Si N x nanomask", Applied physics letters, vol. 89, no. 4: AIP, pp. 041903, 2006.
, "Dependence of local electronic structure in p-type GaN on crystal polarity and presence of inversion domain boundaries", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 24, no. 1: AVS, pp. 245–249, 2006.
, "Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy", Journal of crystal growth, vol. 297, no. 2: Elsevier, pp. 321–325, 2006.
, "Effect of Substrate Miscut on the Direct Growth of Semipolar (101̄1̄) GaN on (100) MgAl 2 O 4 by Metalorganic Chemical Vapor Deposition", Japanese Journal of Applied Physics, vol. 45, 06, 2006.
, "Effect of Substrate Miscut on the Direct Growth of Semipolar (101̄1̄) GaN on (100) MgAl 2 O 4 by Metalorganic Chemical Vapor Deposition", Japanese Journal of Applied Physics, vol. 45, 06, 2006.
, "Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H–SiC", Japanese journal of applied physics, vol. 45, no. 3L: IOP Publishing, pp. L322, 2006.
, "Effect of threading dislocation density on Ni/ n-Ga N Schottky diode I-V characteristics", Journal of applied physics, vol. 100, no. 2: AIP, pp. 023709, 2006.
, "Etching of Ga-face and N-face GaN by inductively coupled plasma", Japanese journal of applied physics, vol. 45, no. 2R: IOP Publishing, pp. 720, 2006.
, "Excitation wavelength dependence of terahertz emission from InN and InAs", Applied physics letters, vol. 89, no. 14: AIP, pp. 141115, 2006.
, "Excitation wavelength dependence of terahertz emission from InN and InAs", Applied physics letters, vol. 89, no. 14: AIP, pp. 141115, 2006.
, "Exciton dynamics in nonpolar (11$$\backslash$bar 2 $0) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth", physica status solidi (c), vol. 3, no. 6: WILEY-VCH Verlag, pp. 2082–2086, 2006.
, "Exciton dynamics in nonpolar (11$$\backslash$bar 2 $0) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth", physica status solidi (c), vol. 3, no. 6: WILEY-VCH Verlag, pp. 2082–2086, 2006.
, "Ga adsorbate on (0001) GaN: In situ characterization with quadrupole mass spectrometry and reflection high-energy electron diffraction", Journal of applied physics, vol. 99, no. 7: AIP, pp. 074902, 2006.
, "Ga adsorbate on (0001) GaN: In situ characterization with quadrupole mass spectrometry and", Info: Postprints, UC Santa Barbara, 2006.
, "GaN quantum dots: Nanophotonics and nanophononics", Quantum Sensing and Nanophotonic Devices III, vol. 6127: International Society for Optics and Photonics, pp. 61270I, 2006.
, "GaN quantum dots: Nanophotonics and nanophononics", Quantum Sensing and Nanophotonic Devices III, vol. 6127: International Society for Optics and Photonics, pp. 61270I, 2006.
, "Growth of Fe-doped GaN by RF plasma-assisted molecular beam epitaxy", Journal of crystal growth, vol. 289, no. 2: Elsevier, pp. 587–595, 2006.
, "Growth of p-type and n-type m-plane GaN by molecular beam epitaxy", Journal of applied physics, vol. 100, no. 6: AIP, pp. 063707, 2006.
, "Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy", Applied physics letters, vol. 88, no. 8: AIP, pp. 082114, 2006.
, "Improved processing technology for GaN-capped deeply-recessed GaN HEMTs without surface passivation", Device Research Conference, 2006 64th: IEEE, pp. 101–102, 2006.
, "Improved processing technology for GaN-capped deeply-recessed GaN HEMTs without surface passivation", Device Research Conference, 2006 64th: IEEE, pp. 101–102, 2006.
, "Improved quality (11 2\= 0) a-plane GaN with sidewall lateral epitaxial overgrowth", Applied physics letters, vol. 88, no. 6: AIP, pp. 061908, 2006.
, "In situ characterization of GaN quantum dot growth with reflection high-energy electron diffraction and line-of-sight mass spectrometry", Journal of applied physics, vol. 99, no. 12: AIP, pp. 124909, 2006.