Publications

Found 384 results
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2013
Pfaff, N. A., K. M. Kelchner, D. F. Feezell, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Thermal Performance of Violet and Blue Single-Quantum-Well Nonpolar m-Plane InGaN Light-Emitting Diodes", Applied Physics Express, vol. 6, no. 9: IOP Publishing, pp. 092104, 2013.
Pimputkar, S., P. M. Von Dollen, J. S. Speck, and S. Nakamura, Use of alkaline-earth metals to reduce impurity incorporation into a group-iii nitride crystal grown using the ammonothermal method, apr # " 25", 2013.
Pimputkar, S., D. S. Kamber, J. S. Speck, and S. Nakamura, Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-III nitride crystals, 2013.
Pimputkar, S., D. S. Kamber, J. S. Speck, and S. Nakamura, Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-iii nitride crystals, 2013.
2012
Haeger, D. A., E. C. Young, R. B. Chung, F. Wu, N. A. Pfaff, M. Tsai, K. Fujito, S. P. DenBaars, J. S. Speck, S. Nakamura, et al., "384 nm laser diode grown on a (20 2\= 1) semipolar relaxed AlGaN buffer layer", Applied Physics Letters, vol. 100, no. 16: AIP, pp. 161107, 2012.
DenBaars, SP., C-C. Pan, N. Pfaff, S. Tanaka, JS. Speck, and S. Nakamura, "Advances in GaN semiconductors for energy efficient solid state lighting", Photonics Conference (IPC), 2012 IEEE: IEEE, pp. 427–428, 2012.
DenBaars, SP., C-C. Pan, N. Pfaff, S. Tanaka, JS. Speck, and S. Nakamura, "Advances in GaN semiconductors for energy efficient solid state lighting", Photonics Conference (IPC), 2012 IEEE: IEEE, pp. 427–428, 2012.
Choi, P-P., O. Cojocaru-Mirédin, D. Abou-Ras, R. Caballero, D. Raabe, V. S. Smentkowski, C. Gyung Park, G. Ho Gu, B. Mazumder, M. Hoi Wong, et al., "Atom probe tomography of compound semiconductors for photovoltaic and light-emitting device applications", Microscopy Today, vol. 20, no. 3: Cambridge University Press, pp. 18–24, 2012.
Garrett, G. A., P. Rotella, H. Shen, M. Wraback, D. A. Haeger, R. B. Chung, N. Pfaff, E. C. Young, S. P. DenBaars, J. S. Speck, et al., "Carrier dynamics in active regions for ultraviolet optoelectronics grown on thick, relaxed AlGaN on semipolar bulk GaN", physica status solidi (b), vol. 249, no. 3: Wiley Online Library, pp. 507–510, 2012.
Toledo, N. G., D. J. Friedman, R. M. Farrell, E. E. Perl, C-T. Lin, J. E. Bowers, J. S. Speck, and U. K. Mishra, "Design of integrated III-nitride/non-III-nitride tandem photovoltaic devices", Journal of Applied Physics, vol. 111, no. 5: AIP, pp. 054503, 2012.
Hu, Y-L., R. M. Farrell, C. J. Neufeld, M. Iza, S. C. Cruz, N. Pfaff, D. Simeonov, S. Keller, S. Nakamura, S. P. DenBaars, et al., "Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells", Applied Physics Letters, vol. 100, no. 16: AIP, pp. 161101, 2012.
Pimputkar, S., J. S. Speck, and S. Nakamura, Group-iii nitride crystal ammonothermally grown using an initially off-oriented non-polar or semi-polar growth surface of a group-iii nitride seed crystal, 2012.
Pan, C-C., S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, "High-power, low-efficiency-droop semipolar (2021) single-quantum-well blue light-emitting diodes", Applied Physics Express, vol. 5, no. 6: IOP Publishing, pp. 062103, 2012.
Zhao, Y., Q. Yan, C-Y. Huang, S-C. Huang, P. Shan Hsu, S. Tanaka, C-C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, et al., "Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells", Applied Physics Letters, vol. 100, no. 20: AIP, pp. 201108, 2012.
Chung, R. B., H. Tse Chen, C-C. Pan, J. S. Speck, S. P. DenBaars, and S. Nakamura, Method for fabrication of (al, in, ga) nitride based vertical light emitting diodes with enhanced current spreading of n-type electrode, jun # " 7", 2012.
Cardwell, DW., AR. Arehart, C. Poblenz, Y. Pei, JS. Speck, UK. Mishra, SA. Ringel, and JP. Pelz, "Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor", Applied Physics Letters, vol. 100, no. 19: AIP, pp. 193507, 2012.
Cardwell, DW., AR. Arehart, C. Poblenz, Y. Pei, JS. Speck, UK. Mishra, SA. Ringel, and JP. Pelz, "Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor", Applied Physics Letters, vol. 100, no. 19: AIP, pp. 193507, 2012.
Cardwell, DW., AR. Arehart, C. Poblenz, Y. Pei, JS. Speck, UK. Mishra, SA. Ringel, and JP. Pelz, "Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor", Applied Physics Letters, vol. 100, no. 19: AIP, pp. 193507, 2012.
Hodges, C., N. Killat, SW. Kaun, MH. Wong, F. Gao, T. Palacios, UK. Mishra, JS. Speck, D. Wolverson, and M. Kuball, "Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers", Applied Physics Letters, vol. 100, no. 11: AIP, pp. 112106, 2012.
Pan, C-C., T. Gilbert, N. Pfaff, S. Tanaka, Y. Zhao, D. Feezell, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Reduction in thermal droop using thick single-quantum-well structure in semipolar (2021) blue light-emitting diodes", Applied Physics Express, vol. 5, no. 10: IOP Publishing, pp. 102103, 2012.
Pan, C-C., T. Gilbert, N. Pfaff, S. Tanaka, Y. Zhao, D. Feezell, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Reduction in thermal droop using thick single-quantum-well structure in semipolar (2021) blue light-emitting diodes", Applied Physics Express, vol. 5, no. 10: IOP Publishing, pp. 102103, 2012.
Chung, R. B., C. Han, C-C. Pan, N. Pfaff, J. S. Speck, S. P. DenBaars, and S. Nakamura, "The reduction of efficiency droop by Al0. 82In0. 18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes", Applied Physics Letters, vol. 101, no. 13: AIP, pp. 131113, 2012.
Chung, R. B., C. Han, C-C. Pan, N. Pfaff, J. S. Speck, S. P. DenBaars, and S. Nakamura, "The reduction of efficiency droop by Al0. 82In0. 18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes", Applied Physics Letters, vol. 101, no. 13: AIP, pp. 131113, 2012.
Zhao, Y., C-Y. Huang, S. Tanaka, C-C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. DenBaars, and S. Nakamura, "Semipolar (20-2-1) Blue and Green InGaN Light-Emitting Diodes", CLEO: Applications and Technology: Optical Society of America, pp. JTh4J–2, 2012.
2011
Roy, T., Y. S. Puzyrev, E. Xia Zhang, S. DasGupta, S. A. Francis, D. M. Fleetwood, R. D. Schrimpf, U. K. Mishra, J. S. Speck, and S. T. Pantelides, "1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions", Microelectronics Reliability, vol. 51, no. 2: Pergamon, pp. 212–216, 2011.

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