| Title | 1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions |
| Publication Type | Journal Article |
| Year of Publication | 2011 |
| Authors | Roy, T., Y. S. Puzyrev, E. Xia Zhang, S. DasGupta, S. A. Francis, D. M. Fleetwood, R. D. Schrimpf, U. K. Mishra, J. S. Speck, and S. T. Pantelides |
| Journal | Microelectronics Reliability |
| Volume | 51 |
| Pagination | 212–216 |