Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers

TitleOptical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers
Publication TypeJournal Article
Year of Publication2012
AuthorsHodges, C., N. Killat, SW. Kaun, MH. Wong, F. Gao, T. Palacios, UK. Mishra, JS. Speck, D. Wolverson, and M. Kuball
JournalApplied Physics Letters
Volume100
Pagination112106