Publications

Found 384 results
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2003
Brandt, O., Y. Jun Sun, H-P. Schönherr, K. H. Ploog, P. Waltereit, S-H. Lim, and J. S. Speck, "Improved synthesis of (In, Ga) N/GaN multiple quantum wells by plasma-assisted molecular-beam epitaxy", Applied physics letters, vol. 83, no. 1: AIP, pp. 90–92, 2003.
Brandt, O., Y. Jun Sun, H-P. Schönherr, K. H. Ploog, P. Waltereit, S-H. Lim, and J. S. Speck, "Improved synthesis of (In,Ga)N/GaN multiple quantum wells by plasma-assisted molecular-beam epitaxy", Applied Physics Letters, vol. 83, pp. 90-92, 2003.
Arehart, AR., C. Poblenz, B. Heying, JS. Speck, UK. Mishra, SP. DenBaars, and SA. Ringel, "Influence of Growth Parameters on the Deep Level Spectrum in MBE-Grown n-GaN", MRS Online Proceedings Library Archive, vol. 798: Cambridge University Press, 2003.
Taylor, TR., PJ. Hansen, N. Pervez, B. Acikel, RA. York, and JS. Speck, "Influence of stoichiometry on the dielectric properties of sputtered strontium titanate thin films", Journal of applied physics, vol. 94, no. 5: AIP, pp. 3390–3396, 2003.
Sun, Y. Jun, O. Brandt, S. Cronenberg, S. Dhar, H. T. Grahn, K. H. Ploog, P. Waltereit, and J. S. Speck, "Nonpolar In x Ga 1- x N/GaN (11\= 0 0) multiple quantum wells grown on γ- LiAlO 2 (100) by plasma-assisted molecular-beam epitaxy", Physical Review B, vol. 67, no. 4: APS, pp. 041306, 2003.
Pervez, NK., PJ. Hansen, TR. Taylor, JS. Speck, and RA. York, "Observation of long transients in the electrical characterization of thin film BST capacitors", Integrated Ferroelectrics, vol. 53, no. 1: Taylor & Francis, pp. 503–511, 2003.
Sun, Y. Jun, O. Brandt, S. Cronenberg, S. Dhar, H. T. Grahn, K. H. Ploog, P. Waltereit, and J. S. Speck, "RAPID COMMUNICATIONS-Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Nonpolar InxGa1-xN/GaN (1100) multiple quantum wells grown on g-LiAlO2 (100) by plasma-assisted", Physical Review-Section B-Condensed Matter, vol. 67, no. 4: Woodbury, NY: published by the American Physical Society through the American Institute of Physics, c1998-, pp. 41306R, 2003.
Miller, EJ., DM. Schaadt, ET. Yu, P. Waltereit, C. Poblenz, and JS. Speck, "Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment", Applied physics letters, vol. 82, no. 8: AIP, pp. 1293–1295, 2003.
Petroff, P. M., J. S. Speck, J. Anna Johnson, and H. Lee, Strain-engineered, self-assembled, semiconductor quantum dot lattices, 2003.
2002
Miller, EJ., ET. Yu, C. Poblenz, C. Elsass, and JS. Speck, "Direct measurement of the polarization charge in AlGaN/GaN heterostructures using capacitance–voltage carrier profiling", Applied physics letters, vol. 80, no. 19: AIP, pp. 3551–3553, 2002.
Davis, R. F., A. M. Roskowski, E. A. Preble, J. S. Speck, B. Heying, J. A. Freitas, EVAN. R. Glaser, and WILLIAM. E. Carlos, "Gallium nitride materials-progress, status, and potential roadblocks", Proceedings of the IEEE, vol. 90, no. 6: IEEE, pp. 993–1005, 2002.
Hansen, M., J. Piprek, PM. Pattison, JS. Speck, S. Nakamura, and SP. DenBaars, "Higher efficiency InGaN laser diodes with an improved quantum well capping configuration", Applied physics letters, vol. 81, no. 22: AIP, pp. 4275–4277, 2002.
Hansen, M., J. Piprek, PM. Pattison, JS. Speck, S. Nakamura, and SP. DenBaars, "Higher efficiency InGaN laser diodes with an improved quantum well capping configuration", Applied physics letters, vol. 81, no. 22: AIP, pp. 4275–4277, 2002.
Taylor, TR., PJ. Hansen, B. Acikel, N. Pervez, RA. York, SK. Streiffer, and JS. Speck, "Impact of thermal strain on the dielectric constant of sputtered barium strontium titanate thin films", Applied Physics Letters, vol. 80, no. 11: AIP, pp. 1978–1980, 2002.
Poblenz, C., T. Mates, M. Craven, SP. DenBaars, and JS. Speck, "Impurity incorporation in InGaN grown by rf plasma-assisted molecular beam epitaxy", Applied physics letters, vol. 81, no. 15: AIP, pp. 2767–2769, 2002.
Andrews, AM., JS. Speck, AE. Romanov, M. Bobeth, and W. Pompe, "Modeling cross-hatch surface morphology in growing mismatched layers", Journal of applied physics, vol. 91, no. 4: AIP, pp. 1933–1943, 2002.
Ullrich, A., W. Pompe, J. S. Speck, and AE. Romanov, "Peculiarities of domain patterns in epitaxially grown ferroelectric thin films", Solid State Phenomena, vol. 87: Trans Tech Publications, pp. 245–254, 2002.
Miller, EJ., DM. Schaadt, ET. Yu, C. Poblenz, C. Elsass, and JS. Speck, "Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope", Journal of applied physics, vol. 91, no. 12: AIP, pp. 9821–9826, 2002.
Haus, E., IP. Smorchkova, B. Heying, P. Fini, C. Poblenz, T. Mates, UK. Mishra, and JS. Speck, "The role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy", Journal of crystal growth, vol. 246, no. 1-2: North-Holland, pp. 55–63, 2002.
Gerardot, BD., G. Subramanian, S. Minvielle, H. Lee, JA. Johnson, WV. Schoenfeld, D. Pine, JS. Speck, and PM. Petroff, "Self-assembling quantum dot lattices through nucleation site engineering", Journal of crystal growth, vol. 236, no. 4: North-Holland, pp. 647–654, 2002.
Gerardot, BD., G. Subramanian, S. Minvielle, H. Lee, JA. Johnson, WV. Schoenfeld, D. Pine, JS. Speck, and PM. Petroff, "Self-assembling quantum dot lattices through nucleation site engineering", Journal of crystal growth, vol. 236, no. 4: North-Holland, pp. 647–654, 2002.

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