Publications
Found 384 results
Author Title Type [ Year
Filters: First Letter Of Last Name is P [Clear All Filters]
"Improved synthesis of (In, Ga) N/GaN multiple quantum wells by plasma-assisted molecular-beam epitaxy", Applied physics letters, vol. 83, no. 1: AIP, pp. 90–92, 2003.
, "Improved synthesis of (In,Ga)N/GaN multiple quantum wells by plasma-assisted molecular-beam epitaxy", Applied Physics Letters, vol. 83, pp. 90-92, 2003.
, "Influence of Growth Parameters on the Deep Level Spectrum in MBE-Grown n-GaN", MRS Online Proceedings Library Archive, vol. 798: Cambridge University Press, 2003.
, "Influence of stoichiometry on the dielectric properties of sputtered strontium titanate thin films", Journal of applied physics, vol. 94, no. 5: AIP, pp. 3390–3396, 2003.
, "Nonpolar In x Ga 1- x N/GaN (11\= 0 0) multiple quantum wells grown on γ- LiAlO 2 (100) by plasma-assisted molecular-beam epitaxy", Physical Review B, vol. 67, no. 4: APS, pp. 041306, 2003.
, "Observation of long transients in the electrical characterization of thin film BST capacitors", Integrated Ferroelectrics, vol. 53, no. 1: Taylor & Francis, pp. 503–511, 2003.
, "RAPID COMMUNICATIONS-Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Nonpolar InxGa1-xN/GaN (1100) multiple quantum wells grown on g-LiAlO2 (100) by plasma-assisted", Physical Review-Section B-Condensed Matter, vol. 67, no. 4: Woodbury, NY: published by the American Physical Society through the American Institute of Physics, c1998-, pp. 41306R, 2003.
, "Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment", Applied physics letters, vol. 82, no. 8: AIP, pp. 1293–1295, 2003.
, , "Direct measurement of the polarization charge in AlGaN/GaN heterostructures using capacitance–voltage carrier profiling", Applied physics letters, vol. 80, no. 19: AIP, pp. 3551–3553, 2002.
, "Gallium nitride materials-progress, status, and potential roadblocks", Proceedings of the IEEE, vol. 90, no. 6: IEEE, pp. 993–1005, 2002.
, "Higher efficiency InGaN laser diodes with an improved quantum well capping configuration", Applied physics letters, vol. 81, no. 22: AIP, pp. 4275–4277, 2002.
, "Higher efficiency InGaN laser diodes with an improved quantum well capping configuration", Applied physics letters, vol. 81, no. 22: AIP, pp. 4275–4277, 2002.
, "Impact of thermal strain on the dielectric constant of sputtered barium strontium titanate thin films", Applied Physics Letters, vol. 80, no. 11: AIP, pp. 1978–1980, 2002.
, "Impurity incorporation in InGaN grown by rf plasma-assisted molecular beam epitaxy", Applied physics letters, vol. 81, no. 15: AIP, pp. 2767–2769, 2002.
, "Modeling cross-hatch surface morphology in growing mismatched layers", Journal of applied physics, vol. 91, no. 4: AIP, pp. 1933–1943, 2002.
, "Peculiarities of domain patterns in epitaxially grown ferroelectric thin films", Solid State Phenomena, vol. 87: Trans Tech Publications, pp. 245–254, 2002.
, "Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope", Journal of applied physics, vol. 91, no. 12: AIP, pp. 9821–9826, 2002.
, "The role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy", Journal of crystal growth, vol. 246, no. 1-2: North-Holland, pp. 55–63, 2002.
, "Self-assembling quantum dot lattices through nucleation site engineering", Journal of crystal growth, vol. 236, no. 4: North-Holland, pp. 647–654, 2002.
, "Self-assembling quantum dot lattices through nucleation site engineering", Journal of crystal growth, vol. 236, no. 4: North-Holland, pp. 647–654, 2002.
, "Ballistic Electron Emission Microscopy Study of Individual Threading Dislocations in GaN", APS Meeting Abstracts, 2001.
, "Characterization of individual threading dislocations in GaN using ballistic electron emission microscopy", Physical review letters, vol. 87, no. 10: APS, pp. 106802, 2001.
, "Condensed Matter: Electronic Properties, etc.-Characterization of Individual Threading Dislocations in GaN Using Ballistic Electron Emission Microscopy", Physical Review Letters, vol. 87, no. 10: [Woodbury, NY, etc.] American Physical Society., pp. 106802–106802, 2001.
, "Development of cross-hatch morphology during growth of lattice mismatched layers", MRS Online Proceedings Library Archive, vol. 673: Cambridge University Press, 2001.
,