Publications

Found 645 results
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2017
Holder, C. O., D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser, 2017.
Shen, C., T. Khee Ng, Y. Guo, C. Lee, J. T. Leonard, G. Liu, K. Ting Ho, H. M. Oubei, X. Sun, J. H. Lerma, et al., Towards III-nitride photonic IC: a new platform for smart lighting and visible light communication, 2017.
Lee, C., J. S. Speck, S. Nakamura, S. P. DenBaars, C. Shen, OOI. F. R. O. M. KAUST, A. Y. Alyamani, and MUNIR. M. E. L. - D. E. S. O. U. KACST, "Turbocharging LiFi with semi-polar lasers", III-Vs get out and about, pp. 60, 2017.
Kowsz, S. J., E. C. Young, B. P. Yonkee, C. D. Pynn, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells", Optics express, vol. 25, no. 4: Optical Society of America, pp. 3841–3849, 2017.
2018
Espenlaub, A. C., A. I. Alhassan, S. Nakamura, C. Weisbuch, and J. S. Speck, "Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes", Applied Physics Letters, vol. 112, no. 14: AIP Publishing, pp. 141106, 2018.
Alhassan, A. I., N. G. Young, R. M. Farrell, C. Pynn, F. Wu, A. Y. Alyamani, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Development of high performance green c-plane III-nitride light-emitting diodes", Optics express, vol. 26, no. 5: Optical Society of America, pp. 5591–5601, 2018.
Saifaddin, B., C. J. Zollner, A. Almogbel, H. Foronda, F. Wu, A. Albadri, A. Al Yamani, M. Iza, S. Nakamura, S. P. DenBaars, et al., "Developments in AlGaN and UV-C LEDs grown on SiC", Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII, vol. 10554: International Society for Optics and Photonics, pp. 105541E, 2018.
Neal, A. T., S. Mou, S. Rafique, H. Zhao, E. Ahmadi, J. S. Speck, K. T. Stevens, J. D. Blevins, D. B. Thomson, N. Moser, et al., "Donors and deep acceptors in β-Ga2O3", Applied Physics Letters, vol. 113, pp. 062101, 2018.
Hahn, W., J.-M. Lentali, P. Polovodov, N. Young, S. Nakamura, J. S. Speck, C. Weisbuch, M. Filoche, Y.-R. Wu, M. Piccardo, et al., "Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy", Phys. Rev. B, vol. 98, pp. 045305, Jul, 2018.
Malkowski, T. F., J. S. Speck, S. P. DenBaars, and S. Nakamura, "An exploratory study of acidic ammonothermal growth in a TZM autoclave at high temperatures", Journal of Crystal Growth, vol. 499, pp. 85 - 89, 2018.
Griffiths, S., S. Pimputkar, J. Kearns, T.F. Malkowski, M.F. Doherty, J.S. Speck, and S. Nakamura, "Growth kinetics of basic ammonothermal gallium nitride crystals", Journal of Crystal Growth, vol. 501, pp. 74 - 80, 2018.
Kimmel, A.-C.L., T. F. Malkowski, S. Griffiths, B. Hertweck, T. G. Steigerwald, L. P. Freund, S. Neumeier, M. Göken, J. S. Speck, and E. Schluecker, "High-temperature corrosion of Inconel®Alloy 718, Haynes®282®Alloy and CoWAlloy1&2 in supercritical ammonia/ammonium chloride solution", Journal of Crystal Growth, vol. 498, pp. 289 - 300, 2018.
Uždavinys, T. K., D. L. Becerra, M. D. Mensi, R. Ivanov, S. Nakamura, S. P. DenBaars, J. S. Speck, and S. Marcinkevičius, "Impact of alloy composition and well width fluctuations on linewidth broadening and carrier lifetimes in semipolar InGaN quantum wells (Conference Presentation)", Gallium Nitride Materials and Devices XIII, vol. 10532: International Society for Optics and Photonics, pp. 105320P, 2018.
Foronda, H. M., F. Wu, C. Zollner, M. Esmed Alif, B. Saifaddin, A. Almogbel, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers", Journal of Crystal Growth, vol. 483: North-Holland, pp. 134–139, 2018.
Mounir, C., I. L. Koslow, T. Wernicke, M. Kneissl, L. Y. Kuritzky, N. L. Adamski, S. Ho Oh, C. D. Pynn, S. P. DenBaars, S. Nakamura, et al., "On the optical polarization properties of semipolar ( 20 2 ¯ 1 ) and ( 20 2 ¯ 1 ¯) InGaN/GaN quantum wells", Journal of Applied Physics, vol. 123, no. 8: AIP Publishing, pp. 085705, 2018.
Alhassan, A. I., E. C. Young, A. Y. Alyamani, A. Albadri, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Reduced-droop green III–nitride light-emitting diodes utilizing GaN tunnel junction", Applied Physics Express, vol. 11, no. 4: IOP Publishing, pp. 042101, 2018.
Khoury, M., H. Li, B. Bonef, L. Y. Kuritzky, A. J. Mughal, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Semipolar GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations", Applied Physics Express, vol. 11, no. 3: IOP Publishing, pp. 036501, 2018.
Lee, C., C. Shen, C. Cozzan, R. M. Farrell, S. Nakamura, A. Y. Alyamani, B. S. Ooi, J. E. Bowers, S. P. DenBaars, and J. S. Speck, "Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems", Gallium Nitride Materials and Devices XIII, vol. 10532: International Society for Optics and Photonics, pp. 105321N, 2018.
Shen, C., T. Khee Ng, C. Lee, S. Nakamura, J. S. Speck, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications", Optics express, vol. 26, no. 6: Optical Society of America, pp. A219–A226, 2018.
Shen, C., T. Khee Ng, C. Lee, S. Nakamura, J. S. Speck, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications", Optics express, vol. 26, no. 6: Optical Society of America, pp. A219–A226, 2018.
Jr, R. M. Farrell, T. J. Baker, A. Chakraborty, B. A. Haskell, M. P. Pattison, R. Sharma, U. K. Mishra, S. P. DenBaars, J. S. Speck, S. Nakamura, et al., TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (Ga, Al, In, B) N THIN FILMS, HETEROSTRUCTURES, AND DEVICES, 2018.
2019
Reilly, C. E., B. Bonef, S. Nakamura, J. S. Speck, S. P. DenBaars, and S. Keller, "Characterization of InGaN quantum dots grown by metalorganic chemical vapor deposition", Semiconductor Science and Technology, vol. 34, pp. 125002, oct, 2019.
Khoury, M., H. Li, H. Zhang, B. Bonef, M. S. Wong, F. Wu, D. Cohen, P. De Mierry, P. Vennéguès, J. S. Speck, et al., "Demonstration of Electrically Injected Semipolar Laser Diodes Grown on Low-Cost and Scalable Sapphire Substrates", ACS Applied Materials & Interfaces, vol. 11, pp. 47106-47111, 2019.
Myers, D. J., K. Gel, A. I. Alhassan, L. Martinelli, J. Peretti, S. Nakamura, C. Weisbuch, and J. S. Speck, "Direct measurement of hot-carrier generation in a semiconductor barrier heterostructure: Identification of the dominant mechanism for thermal droop", Phys. Rev. B, vol. 100, pp. 125303, Sep, 2019.
Hamdy, K. W., E. C. Young, A. I. Alhassan, D. L. Becerra, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes", Opt. Express, vol. 27, pp. 8327–8334, Mar, 2019.

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