Publications

Found 374 results
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2010
Raring, J. W., E. M. Hall, M. C. Schmidt, C. Poblenz, B. Li, N. Pfister, D. F. Feezell, R. Craig, J. S. Speck, S. P. DenBaars, et al., "High-power high-efficiency continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes", Gallium Nitride Materials and Devices V, vol. 7602: International Society for Optics and Photonics, pp. 760218, 2010.
Rauch, C., F. Reurings, F. Tuomisto, TD. Veal, C. F. McConville, H. Lu, WJ. Schaff, CS. Gallinat, G. Koblmüller, JS. Speck, et al., "In-vacancies in Si-doped InN", physica status solidi (a), vol. 207, no. 5: WILEY-VCH Verlag, pp. 1083–1086, 2010.
Lee, C. Hoon, H. San Kim, and J. S. Speck, Light emitting device having a plurality of light emitting cells and method of fabricating the same, 2010.
Lee, C. Hoon, H. San Kim, and J. S. Speck, Light emitting device having a plurality of light emitting cells and method of fabricating the same, aug # " 10", 2010.
Law, JJM., ET. Yu, G. Koblmüller, F. Wu, and JS. Speck, "Low defect-mediated reverse-bias leakage in (0001) GaN via high-temperature molecular beam epitaxy", Applied Physics Letters, vol. 96, no. 10: AIP, pp. 102111, 2010.
Kaeding, J. F., D-S. Lee, M. Iza, T. J. Baker, H. Sato, B. A. Haskell, J. S. Speck, S. P. DenBaars, S. Nakamura, and others, Method for improved growth of semipolar (Al, In, Ga, B) N, 2010.
Kaeding, J. F., D-S. Lee, M. Iza, T. J. Baker, H. Sato, B. A. Haskell, J. S. Speck, S. P. DenBaars, and S. Nakamura, Method for improved growth of semipolar (al, in, ga, b) n, 2010.
Wong, M. Hoi, Y. Pei, D. Brown, J. S. Speck, U. K. Mishra, M. L. Schuette, H. Kim, V. Balasubramanian, and W. Lu, "N-face GaN-based microwave metal-insulator-semiconductor high electron mobility transistors by plasma-assisted molecular beam epitaxy", Proceedings of CS MANTECH Conference. Oregon, USA, pp. 189–192, 2010.
Hurni, C. A., O. Bierwagen, J. R. Lang, B. M. McSkimming, C. S. Gallinat, E. C. Young, D. A. Browne, U. K. Mishra, and J. S. Speck, "pn junctions on Ga-face GaN grown by NH 3 molecular beam epitaxy with low ideality factors and low reverse currents", Applied Physics Letters, vol. 97, no. 22: AIP, pp. 222113, 2010.
Raring, J. W., E. M. Hall, M. C. Schmidt, C. Poblenz, B. Li, N. Pfister, D. Kebort, Y-C. Chang, D. F. Feezell, R. Craig, et al., "State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes", Laser Technology for Defense and Security VI, vol. 7686: International Society for Optics and Photonics, pp. 76860L, 2010.
Linhart, WM., TD. Veal, PDC. King, G. Koblmüller, CS. Gallinat, JS. Speck, and CF. McConville, "Surface, bulk, and interface electronic properties of nonpolar InN", Applied Physics Letters, vol. 97, no. 11: AIP, pp. 112103, 2010.
2011
Wong, M. Hoi, U. Singisetti, J. Lu, J. S. Speck, and U. K. Mishra, "Anomalous output conductance in N-polar GaN-based MIS-HEMTs", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 211–212, 2011.
Neufeld, C. J., S. C. Cruz, R. M. Farrell, M. Iza, J. R. Lang, S. Keller, S. Nakamura, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Effect of doping and polarization on carrier collection in InGaN quantum well solar cells", Applied Physics Letters, vol. 98, no. 24: AIP, pp. 243507, 2011.
Bae, SY., DS. Lee, BH. Kong, HK. Cho, JF. Kaeding, S. Nakamura, SP. DenBaars, and JS. Speck, "Electroluminescence enhancement of (112\= 2) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates", Current Applied Physics, vol. 11, no. 3: North-Holland, pp. 954–958, 2011.
Fujiwara, T., R. Yeluri, D. Denninghoff, J. Lu, S. Keller, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Enhancement-mode m-plane AlGaN/GaN heterojunction field-effect transistors with+ 3 V of threshold voltage using Al2O3 deposited by atomic layer deposition", Applied physics express, vol. 4, no. 9: IOP Publishing, pp. 096501, 2011.
Wong, MH., DF. Brown, ML. Schuette, H. Kim, V. Balasubramanian, W. Lu, JS. Speck, and UK. Mishra, "Erratum for ëX-band power performance of N-face GaN MIS-HEMTsí", Electronics Letters, vol. 47, no. 6: IET Digital Library, pp. 416–416, 2011.
Lang, J., C. Neufeld, C. Hurni, S. Cruz, E. Matioli, U. Mishra, and J. Speck, "High External Quantum Efficiency and Fill-Factor InGaN-Based Solar Cells Grown by NH (3)-MBE", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Lang, J. R., CJ. Neufeld, CA. Hurni, SC. Cruz, E. Matioli, UK. Mishra, and JS. Speck, "High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH 3-based molecular beam epitaxy", Applied Physics Letters, vol. 98, no. 13: AIP, pp. 131115, 2011.
Farrell, R. M., C. J. Neufeld, S. C. Cruz, J. R. Lang, M. Iza, S. Keller, S. Nakamura, SP. DenBaars, UK. Mishra, and JS. Speck, "High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm", Applied Physics Letters, vol. 98, no. 20: AIP, pp. 201107, 2011.
Raring, J. W., M. C. Schmidt, C. Poblenz, B. Li, Y-C. Chang, M. J. Mondry, Y-. Da Lin, M. R. Krames, R. Craig, J. S. Speck, et al., "High-performance blue and green laser diodes based on nonpolar/semipolar bulk GaN substrates", Gallium Nitride Materials and Devices Vi, vol. 7939: International Society for Optics and Photonics, pp. 79390Y, 2011.
Schmidt, M. C., C. Poblenz, Y-C. Chang, B. Li, M. J. Mondry, J. Iveland, M. R. Krames, R. Craig, J. W. Raring, J. S. Speck, et al., "High-performance blue and green laser diodes based on nonpolar/semipolar GaN substrates", Laser Technology for Defense and Security VII, vol. 8039: International Society for Optics and Photonics, pp. 80390D, 2011.
Farrell, R. M., C. J. Neufeld, S. C. Cruz, NG. Young, M. Iza, J. R. Lang, Y-L. Hu, D. Simeonov, N. Singh, E. E. Perl, et al., "InGaN-Based Solar Cells for Ultrahigh Efficiency Multijunction Solar Cell Applications", UC Solar Symposlum, 2011.
Toledo, N. G., S. C. Cruz, C. J. Neufeld, J. R. Lang, M. A. Scarpulla, T. Buehl, A. C. Gossard, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Integrated non-III-nitride/III-nitride tandem solar cell", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 265–266, 2011.
Lee, C. Hoon, H. San Kim, and J. S. Speck, Light emitting device having a plurality of light emitting cells and method of fabricating the same, 2011.
Hurni, C., P. Burke, J. Lang, B. McSkimming, E. Young, U. Mishra, and J. Speck, "Low temperature p-GaN grown by NH 3-MBE", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.

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