Publications
Found 631 results
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, "Analysis of picosecond pulsed laser melted graphite", MRS Online Proceedings Library Archive, vol. 74: Cambridge University Press, 1986.
, "Beam-Solid Interactions and Transient Processes", MRS Symposia Proceedings, Boston, edited by ST Picraux, MO Thompson and JS Williams,(Materials Research Society, 1986), vol. 74, pp. 263, 1987.
, "Correction of image intensifier distortion for three-dimensional x-ray angiography", Medical Imaging 1995: Physics of Medical Imaging, vol. 2432: International Society for Optics and Photonics, pp. 272–280, 1995.
, "Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN", Journal of electronic materials, vol. 24, no. 11: Springer-Verlag, pp. 1707–1709, 1995.
, "ORGANIC-INORGANIC INTERFACES IN THE ULTRASTRUCTURE OF RED ABALONE NACRE", ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, vol. 209: AMER CHEMICAL SOC PO BOX 57136, WASHINGTON, DC 20037-0136, pp. 584–INOR, 1995.
, "Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire", Applied Physics Letters, vol. 67, no. 11: AIP, pp. 1541–1543, 1995.
, "Cleaved facets in GaN by wafer fusion of GaN to InP", MRS Online Proceedings Library Archive, vol. 421: Cambridge University Press, 1996.
, "Cleaved GaN facets by wafer fusion of GaN to InP", Applied physics letters, vol. 68, no. 15: AIP, pp. 2147–2149, 1996.
, "Critical transitions in the biofabrication of abalone shells and flat pearls", Chemistry of Materials, vol. 8, no. 3: American Chemical Society, pp. 679–690, 1996.
, "Effect of the trimethylgallium flow during nucleation layer growth on the properties of GaN grown on sapphire", Japanese journal of applied physics, vol. 35, no. 3A: IOP Publishing, pp. L285, 1996.
, "Growth-related stress and surface morphology in homoepitaxial SrTiO3 films", Applied physics letters, vol. 68, no. 4: AIP, pp. 490–492, 1996.
, "Improvement in low energy ion-induced damage with a low temperature GaAs capping layer", Applied physics letters, vol. 69, no. 12: AIP, pp. 1728–1730, 1996.
, "Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 68, no. 11: AIP, pp. 1525–1527, 1996.
, "Morphological and structural transitions in GaN films grown on sapphire by metal-organic chemical vapor deposition", Japanese journal of applied physics, vol. 35, no. 12B: IOP Publishing, pp. L1648, 1996.
, "Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN", Applied physics letters, vol. 68, no. 10: AIP, pp. 1371–1373, 1996.
, "Order No.: JA608-001\copyright 1996 MRS", MRS BULLETIN, 1996.
, "Order No.: JA608-001\copyright 1996 MRS", MRS BULLETIN, 1996.
, "Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films", Applied physics letters, vol. 68, no. 5: AIP, pp. 643–645, 1996.
, "Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films", Applied Physics Letters, vol. 68, pp. 643-645, 1996.
, Epitaxial oxide thin films 3. Materials Research Society symposium proceedings Volume 474: Materials Research Society, Warrendale, PA (US), 1997.
, Epitaxial Oxide Thin Films III, vol. 474: Materials Research Society, 1997.
, "Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy", Journal of applied physics, vol. 82, no. 11: AIP, pp. 5472–5479, 1997.
, "InzAl1- zAs/InyGa1- yAs lattice constant engineered HEMTs on GaAs", Solid-State Electronics, vol. 41, no. 10: Pergamon, pp. 1629–1634, 1997.
, "JMR Abstracts", MRS BULLETIN, pp. 85, 1997.
, "Oxide based compound semiconductor electronics", Electron Devices Meeting, 1997. IEDM'97. Technical Digest., International: IEEE, pp. 545–548, 1997.