Publications

Found 548 results
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2015
Feezell, D. F., M. C. Schmidt, K-C. Kim, R. M. Farrell, D. A. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, Al (x) Ga (1-x) N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes, may # " 26", 2015.
Megalini, L., D. L. Becerra, R. M. Farrell, A. Pourhashemi, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. A. Cohen, "Continuous-wave operation of a InGaN laser diode with a photoelectrochemically etched current aperture", Applied Physics Express, vol. 8, no. 4: IOP Publishing, pp. 042701, 2015.
Nguyen, X. Sang, K. Lin, Z. Zhang, B. McSkimming, AR. Arehart, JS. Speck, SA. Ringel, E. A. Fitzgerald, and SJ. Chua, "Correlation of a generation-recombination center with a deep level trap in GaN", Applied Physics Letters, vol. 106, no. 10: AIP Publishing, pp. 102101, 2015.
Fireman, M. N., D. A. Browne, B. Mazumder, J. S. Speck, and U. K. Mishra, "Demonstration of isotype GaN/AlN/GaN heterobarrier diodes by NH3-molecular beam epitaxy", Applied Physics Letters, vol. 106, no. 20: AIP Publishing, pp. 202106, 2015.
Yonkee, B. P., R. M. Farrell, J. T. Leonard, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Demonstration of low resistance ohmic contacts to p-type (202Ø1Ø) GaN", Semiconductor Science and Technology, vol. 30, no. 7: IOP Publishing, pp. 075007, 2015.
Kowsz, SJ., CD. Pynn, SH. Oh, RM. Farrell, JS. Speck, SP. DenBaars, and S. Nakamura, "Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells", Applied Physics Letters, vol. 107, no. 10: AIP Publishing, pp. 101104, 2015.
Pourhashemi, A., RM. Farrell, DA. Cohen, JS. Speck, SP. DenBaars, and S. Nakamura, "High-power blue laser diodes with indium tin oxide cladding on semipolar (20 2 1) GaN substrates", Applied Physics Letters, vol. 106, no. 11: AIP Publishing, pp. 111105, 2015.
Nedy, J. G., N. G. Young, K. M. Kelchner, Y. Hu, R. M. Farrell, S. Nakamura, S. P. DenBaars, C. Weisbuch, and J. S. Speck, "Low damage dry etch for III-nitride light emitters", Semiconductor Science and Technology, vol. 30, no. 8: IOP Publishing, pp. 085019, 2015.
Leonard, JT., DA. Cohen, BP. Yonkee, RM. Farrell, T. Margalith, S. Lee, SP. DenBaars, JS. Speck, and S. Nakamura, "Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture", Applied Physics Letters, vol. 107, no. 1: AIP Publishing, pp. 011102, 2015.
Schrimpf, RD., DM. Fleetwood, ST. Pantelides, YS. Puzyrev, S. Mukherjee, RA. Reed, JS. Speck, and UK. Mishra, "Physical mechanisms affecting the reliability of GaN-based high electron mobility transistors", MRS Online Proceedings Library Archive, vol. 1792: Cambridge University Press, 2015.
Zhang, Z., AR. Arehart, ECH. Kyle, J. Chen, EX. Zhang, DM. Fleetwood, RD. Schrimpf, JS. Speck, and SA. Ringel, "Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy", Applied Physics Letters, vol. 106, no. 2: AIP Publishing, pp. 022104, 2015.
Kaun, S. W., B. Mazumder, M. N. Fireman, E. C. H. Kyle, U. K. Mishra, and J. S. Speck, "Pure AlN layers in metal-polar AlGaN/AlN/GaN and AlN/GaN heterostructures grown by low-temperature ammonia-based molecular beam epitaxy", Semiconductor Science and Technology, vol. 30, no. 5: IOP Publishing, pp. 055010, 2015.
Hsu, P. Shan, K. M. Kelchner, R. M. Farrell, D. A. Haeger, H. Ohta, A. Tyagi, S. Nakamura, S. P. DenBaars, and J. S. Speck, Semi-polar iii-nitride optoelectronic devices on m-plane substrates with miscuts less than+/-15 degrees in the c-direction, 2015.
Leonard, JT., DA. Cohen, BP. Yonkee, RM. Farrell, SP. DenBaars, JS. Speck, and S. Nakamura, "Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts", Journal of Applied Physics, vol. 118, no. 14: AIP Publishing, pp. 145304, 2015.
Efros, A. L., E. Fortunato, C. Felser, B. Gil, S. T. B. Gönnenwein, N. Grandjean, M. J Gregg, M. Grundmann, K. Haenen, A. Hoffmann, et al., Stefan Hildebrandt Sabine Bahrs, 2015.
Efros, A. L., E. Fortunato, C. Felser, B. Gil, S. T. B. Gönnenwein, N. Grandjean, M. J Gregg, M. Grundmann, K. Haenen, A. Hoffmann, et al., Stefan Hildebrandt Sabine Bahrs, 2015.
Felser, C., E. Fortunato, B. Gil, S. T. B. Gönnenwein, N. Grandjean, M. J Gregg, M. Grundmann, K. Haenen, A. Hoffmann, A. A. Kaminskii, et al., Stefan Hildebrandt Sabine Bahrs, 2015.
Felser, C., E. Fortunato, B. Gil, S. T. B. Gönnenwein, N. Grandjean, M. J Gregg, M. Grundmann, K. Haenen, A. Hoffmann, A. A. Kaminskii, et al., Stefan Hildebrandt Sabine Bahrs, 2015.
Holder, C. O., D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser, sep # " 15", 2015.
Zhang, Z., E. Farzana, WY. Sun, J. Chen, EX. Zhang, DM. Fleetwood, RD. Schrimpf, B. McSkimming, ECH. Kyle, JS. Speck, et al., "Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN", Journal of Applied Physics, vol. 118, no. 15: AIP Publishing, pp. 155701, 2015.
Zhang, Z., E. Farzana, WY. Sun, J. Chen, EX. Zhang, DM. Fleetwood, RD. Schrimpf, B. McSkimming, ECH. Kyle, JS. Speck, et al., "Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN", Journal of Applied Physics, vol. 118, no. 15: AIP Publishing, pp. 155701, 2015.
2014
Feneberg, M., C. Lidig, K. Lange, M. E. White, M. Y. Tsai, J. S. Speck, O. Bierwagen, and R. Goldhahn, "Anisotropy of the electron effective mass in rutile SnO2 determined by infrared ellipsometry", physica status solidi (a), vol. 211, no. 1: Wiley Online Library, pp. 82–86, 2014.
Sasikumar, A., AR. Arehart, SW. Kaun, J. Chen, EX. Zhang, DM. Fleetwood, RD. Schrimpf, JS. Speck, and SA. Ringel, "Defects in GaN based transistors", Gallium Nitride Materials and Devices IX, vol. 8986: International Society for Optics and Photonics, pp. 89861C, 2014.
Giddings, AD., TJ. Prosa, A. Merkulov, FA. Stevie, HG. Francois-Saint-Cyr, NG. Young, JS. Speck, and DJ. Larson, "Elemental Quantification and Visualization of GaN Structures using APT and SIMS", Microscopy and Microanalysis, vol. 20, no. S3: Cambridge University Press, pp. 2112–2113, 2014.
Young, NG., EE. Perl, RM. Farrell, M. Iza, S. Keller, JE. Bowers, S. Nakamura, SP. DenBaars, and JS. Speck, "High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration", Applied Physics Letters, vol. 104, no. 16: AIP, pp. 163902, 2014.

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