Publications

Found 106 results
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2001
Elsass, CR., C. Poblenz, B. Heying, P. Fini, PM. Petroff, SP. DenBaars, UK. Mishra, and JS. Speck, "Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Journal of crystal growth, vol. 233, no. 4: North-Holland, pp. 709–716, 2001.
Elsass, C. R., C. Poblenz, B. Heying, P. Fini, P. M. Petroff, S. P. DenBaars, U. K. Mishra, J. S. Speck, A. Saxler, S. Elhamrib, et al., "Influence of growth temperature and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Japanese Journal of Applied Physics, vol. 40, no. 11R: IOP Publishing, pp. 6235, 2001.
Elsass, C. R., C. Poblenz, B. Heying, P. Fini, P. M. Petroff, S. P. DenBaars, U. K. Mishra, J. S. Speck, A. Saxler, S. Elhamrib, et al., "Influence of growth temperature and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Japanese Journal of Applied Physics, vol. 40, no. 11R: IOP Publishing, pp. 6235, 2001.
Thompson, C., GB. Stephenson, JA. Eastman, A. Munkholm, O. Auciello, MV. Ramana Murty, P. Fini, SP. DenBaars, and JS. Speck, "Investigations of chemical vapor deposition of GaN using synchrotron radiation", Journal of the Electrochemical Society, vol. 148, no. 5: The Electrochemical Society, pp. C390–C394, 2001.
Smith, KV., ET. Yu, CR. Elsass, B. Heying, and JS. Speck, "Localized variations in electronic structure of AlGaN/GaN heterostructures grown by molecular-beam epitaxy", Applied Physics Letters, vol. 79, no. 17: AIP, pp. 2749–2751, 2001.
Böttcher, T., S. Einfeldt, S. Figge, R. Chierchia, H. Heinke, D. Hommel, and JS. Speck, "The role of high-temperature island coalescence in the development of stresses in GaN films", Applied Physics Letters, vol. 78, no. 14: AIP, pp. 1976–1978, 2001.
2000
Liu, Y., A. S. Nagra, E. G. Erker, P. Periaswamy, T. R. Taylor, J. Speck, and R. A. York, "BaSrTiO/sub 3/interdigitated capacitors for distributed phase shifter applications", IEEE microwave and guided wave letters, vol. 10, no. 11: IEEE, pp. 448–450, 2000.
Saxler, A., P. Debray, R. Perrin, S. Elhamri, WC. Mitchel, CR. Elsass, IP. Smorchkova, B. Heying, E. Haus, P. Fini, et al., "Characterization of an AlGaN/GaN two-dimensional electron gas structure", Journal of Applied Physics, vol. 87, no. 1: AIP, pp. 369–374, 2000.
Saxler, A., P. Debray, R. Perrin, S. Elhamri, WC. Mitchel, CR. Elsass, IP. Smorchkova, B. Heying, E. Haus, P. Fini, et al., "Characterization of an AlGaN/GaN two-dimensional electron gas structure", Journal of Applied Physics, vol. 87, no. 1: AIP, pp. 369–374, 2000.
Elsass, CR., T. Mates, B. Heying, C. Poblenz, P. Fini, PM. Petroff, SP. DenBaars, and JS. Speck, "Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy", Applied Physics Letters, vol. 77, no. 20: AIP, pp. 3167–3169, 2000.
Saxler, A., P. Debray, R. Perrin, S. Elhamri, W. C. Mitchel, C. R. Elsass, IP. Smorchkova, B. Heying, E. Haus, P. Fini, et al., "Electrical transport of an AlGaN/GaN two-dimensional electron gas", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 619–625, 2000.
Saxler, A., P. Debray, R. Perrin, S. Elhamri, W. C. Mitchel, C. R. Elsass, IP. Smorchkova, B. Heying, E. Haus, P. Fini, et al., "Electrical transport of an AlGaN/GaN two-dimensional electron gas", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 619–625, 2000.
Elsass, C. R., I. P. Smorchkova, B. Heying, E. Haus, C. Poblenz, P. Fini, K. Maranowski, P. M. Petroff, S. P. DenBaars, U. K. Mishra, et al., "Electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Japanese Journal of Applied Physics, vol. 39, no. 10B: IOP Publishing, pp. L1023, 2000.
Fini, P., A. Munkholm, C. Thompson, GB. Stephenson, JA. Eastman, MV. Ramana Murty, O. Auciello, L. Zhao, SP. DenBaars, and JS. Speck, "In situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN", Applied Physics Letters, vol. 76, no. 26: AIP, pp. 3893–3895, 2000.
Munkholm, A., GB. Stephenson, JA. Eastman, O. Auciello, MV. Ramana Murty, C. Thompson, P. Fini, JS. Speck, and SP. DenBaars, "In situ studies of the effect of silicon on GaN growth modes", Journal of crystal growth, vol. 221, no. 1-4: North-Holland, pp. 98–105, 2000.
Munkholm, A., C. Thompson, MV. Ramana Murty, JA. Eastman, O. Auciello, GB. Stephenson, P. Fini, SP. DenBaars, and JS. Speck, "Layer-by-layer growth of GaN induced by silicon", Applied Physics Letters, vol. 77, no. 11: AIP, pp. 1626–1628, 2000.
Fini, P., L. Zhao, J. S. Speck, S. P. DenBaars, A. Munkholm, C. Thompson, GB. Stephenson, JA. Eastman, RMV. Murty, and O. Auciello, Measurement and minimization of wing tilt in laterally overgrown GaN on a SiO ${$sub 2$}$ mask.: Argonne National Lab., IL (US), 2000.
York, R., A. Nagra, E. Erker, T. Taylor, P. Periaswamy, J. Speck, S. Streiffer, and O. Auciello, "Microwave integrated circuits using thin-film BST", Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on, vol. 1: IEEE, pp. 195–200, 2000.
Erker, E. G., A. S. Nagra, Y. Liu, P. Periaswamy, T. R. Taylor, J. Speck, and R. A. York, "Monolithic Ka-band phase shifter using voltage tunable BaSrTiO/sub 3/parallel plate capacitors", IEEE microwave and guided wave letters, vol. 10, no. 1: IEEE, pp. 10–12, 2000.

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