Publications

Found 333 results
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2010
Young, E. C., A. E. Romanov, C. S. Gallinat, A. Hirai, G. E. Beltz, and J. S. Speck, "Anisotropy of tensile stresses and cracking in nonbasal plane Al x Ga 1- x N/GaN heterostructures", Applied Physics Letters, vol. 96, no. 4: AIP, pp. 041913, 2010.
Speck, J. S., B. A. Haskell, M. P Pattison, and T. J. Baker, Etching technique for the fabrication of thin (Al, In, Ga) N layers, 2010.
Brown, D. F., S. Keller, T. E. Mates, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Growth and characterization of In-polar and N-polar InAlN by metal organic chemical vapor deposition", Journal of Applied Physics, vol. 107, no. 3: AIP, pp. 033509, 2010.
Bierwagen, O., and J. S. Speck, "High electron mobility In 2 O 3 (001) and (111) thin films with nondegenerate electron concentration", Applied Physics Letters, vol. 97, no. 7: AIP, pp. 072103, 2010.
Kaeding, J. F., D-S. Lee, M. Iza, T. J. Baker, H. Sato, B. A. Haskell, J. S. Speck, S. P. DenBaars, S. Nakamura, and others, Method for improved growth of semipolar (Al, In, Ga, B) N, 2010.
Kaeding, J. F., D-S. Lee, M. Iza, T. J. Baker, H. Sato, B. A. Haskell, J. S. Speck, S. P. DenBaars, and S. Nakamura, Method for improved growth of semipolar (al, in, ga, b) n, 2010.
Wong, M. Hoi, Y. Pei, D. Brown, J. S. Speck, U. K. Mishra, M. L. Schuette, H. Kim, V. Balasubramanian, and W. Lu, "N-face GaN-based microwave metal-insulator-semiconductor high electron mobility transistors by plasma-assisted molecular beam epitaxy", Proceedings of CS MANTECH Conference. Oregon, USA, pp. 189–192, 2010.
Wong, M. Hoi, Y. Pei, D. Brown, J. S. Speck, U. K. Mishra, M. L. Schuette, H. Kim, V. Balasubramanian, and W. Lu, "N-face GaN-based microwave metal-insulator-semiconductor high electron mobility transistors by plasma-assisted molecular beam epitaxy", Proceedings of CS MANTECH Conference. Oregon, USA, pp. 189–192, 2010.
Mishra, U. K., M. Hoi Wong, S. Dasgupta, D. F. Brown, B. L. Swenson, S. Keller, J. S. Speck, and others, "N-polar GaN-based MIS-HEMTs for mixed signal applications", Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International: IEEE, pp. 1130–1133, 2010.
Bierwagen, O., and J. S. Speck, "Nucleation of islands and continuous high-quality In 2 O 3 (001) films during plasma-assisted molecular beam epitaxy on Y-stabilized ZrO 2 (001)", Journal of Applied Physics, vol. 107, no. 11: AIP, pp. 113519, 2010.
Schley, P., J. Räthel, E. Sakalauskas, G. Gobsch, M. Wieneke, J. Bläsing, A. Krost, G. Koblmüller, JS. Speck, and RDAM. Goldhahn, "Optical anisotropy of A-and M-plane InN grown on free-standing GaN substrates", physica status solidi (a), vol. 207, no. 5: Wiley Online Library, pp. 1062–1065, 2010.
Hurni, C. A., O. Bierwagen, J. R. Lang, B. M. McSkimming, C. S. Gallinat, E. C. Young, D. A. Browne, U. K. Mishra, and J. S. Speck, "pn junctions on Ga-face GaN grown by NH 3 molecular beam epitaxy with low ideality factors and low reverse currents", Applied Physics Letters, vol. 97, no. 22: AIP, pp. 222113, 2010.
Hurni, C. A., O. Bierwagen, J. R. Lang, B. M. McSkimming, C. S. Gallinat, E. C. Young, D. A. Browne, U. K. Mishra, and J. S. Speck, "pn junctions on Ga-face GaN grown by NH 3 molecular beam epitaxy with low ideality factors and low reverse currents", Applied Physics Letters, vol. 97, no. 22: AIP, pp. 222113, 2010.
Ben-Yaacov, T., T. Ive, C. G. Van de Walle, U. K. Mishra, J. S. Speck, and S. P. DenBaars, "Properties of In-doped ZnO films grown by metalorganic chemical vapor deposition on GaN (0001) templates", Journal of electronic materials, vol. 39, no. 5: Springer US, pp. 608–611, 2010.
Nagata, T., O. Bierwagen, M. E. White, M-Y. Tsai, and J. S. Speck, "Study of the Au Schottky contact formation on oxygen plasma treated n-type SnO 2 (101) thin films", Journal of Applied Physics, vol. 107, no. 3: AIP, pp. 033707, 2010.
White, M. E., O. Bierwagen, M-Y. Tsai, and J. S. Speck, "Synthesis and characterization of highly resistive epitaxial indium-doped SnO2", Applied physics express, vol. 3, no. 5: IOP Publishing, pp. 051101, 2010.
Baker, T. J., B. A. Haskell, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamura, Technique for the growth of planar semi-polar gallium nitride, 2010.
Dasgupta, S., D. F. Brown, S. Keller, J. S. Speck, U. K. Mishra, and others, "T-gate technology for N-polar GaN-based self-aligned MIS-HEMTs with state-of-the-art f MAX of 127 GHz: Pathway towards scaling to 30nm GaN HEMTs", Device Research Conference (DRC), 2010: IEEE, pp. 155–156, 2010.
Dasgupta, S., Nidhi, D. F. Brown, F. Wu, S. Keller, J. S. Speck, and U. K. Mishra, "Ultralow nonalloyed ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In (Ga) N regrowth", Applied physics letters, vol. 96, no. 14: AIP, pp. 143504, 2010.
Tsai, M-Y., O. Bierwagen, M. E. White, and J. S. Speck, "β-Ga 2 O 3 growth by plasma-assisted molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 28, no. 2: AVS, pp. 354–359, 2010.
2009
Da Lin, Y-., A. Chakraborty, S. Brinkley, H. Chih Kuo, T. Melo, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Characterization of blue-green m-plane InGaN light emitting diodes", Applied Physics Letters, vol. 94, no. 26: AIP, pp. 261108, 2009.
Bierwagen, O., T. Nagata, T. Ive, CG. Van de Walle, and JS. Speck, "Dissipation-factor-based criterion for the validity of carrier-type identification by capacitance-voltage measurements", Applied Physics Letters, vol. 94, no. 15: AIP, pp. 152110, 2009.
White, ME., O. Bierwagen, MY. Tsai, and JS. Speck, "Electron transport properties of antimony doped Sn O 2 single crystalline thin films grown by plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 106, no. 9: AIP, pp. 093704, 2009.
Dasgupta, S., Y. Pei, B. L. Swenson, D. F. Brown, S. Keller, J. S. Speck, U. K. Mishra, and others, "$ f_ ${$T$}$ $ and $ f_ ${$$\backslash$rm MAX$}$ $ of 47 and 81 GHz, Respectively, on N-Polar GaN/AlN MIS-HEMT", IEEE Electron Device Letters, vol. 30, no. 6: IEEE, pp. 599–601, 2009.
Akopian, N., A. Vardi, G. Bahir, V. Garber, E. Ehrenfreund, D. Gershoni, C. Poblenz, CR. Elsass, IP. Smorchkova, and JS. Speck, "Fermi edge singularity observed in GaN/AlGaN heterointerfaces", Applied Physics Letters, vol. 94, no. 22: AIP, pp. 223502, 2009.

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