Publications

Found 301 results
Author Title Type [ Year(Asc)]
Filters: First Letter Of Last Name is A  [Clear All Filters]
2018
Mounir, C., I. L. Koslow, T. Wernicke, M. Kneissl, L. Y. Kuritzky, N. L. Adamski, S. Ho Oh, C. D. Pynn, S. P. DenBaars, S. Nakamura, et al., "On the optical polarization properties of semipolar ( 20 2 ¯ 1 ) and ( 20 2 ¯ 1 ¯) InGaN/GaN quantum wells", Journal of Applied Physics, vol. 123, no. 8: AIP Publishing, pp. 085705, 2018.
Alhassan, A. I., E. C. Young, A. Y. Alyamani, A. Albadri, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Reduced-droop green III–nitride light-emitting diodes utilizing GaN tunnel junction", Applied Physics Express, vol. 11, no. 4: IOP Publishing, pp. 042101, 2018.
Alhassan, A. I., E. C. Young, A. Y. Alyamani, A. Albadri, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Reduced-droop green III–nitride light-emitting diodes utilizing GaN tunnel junction", Applied Physics Express, vol. 11, no. 4: IOP Publishing, pp. 042101, 2018.
Alhassan, A. I., E. C. Young, A. Y. Alyamani, A. Albadri, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Reduced-droop green III–nitride light-emitting diodes utilizing GaN tunnel junction", Applied Physics Express, vol. 11, no. 4: IOP Publishing, pp. 042101, 2018.
Lee, C., C. Shen, C. Cozzan, R. M. Farrell, S. Nakamura, A. Y. Alyamani, B. S. Ooi, J. E. Bowers, S. P. DenBaars, and J. S. Speck, "Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems", Gallium Nitride Materials and Devices XIII, vol. 10532: International Society for Optics and Photonics, pp. 105321N, 2018.
Shen, C., T. Khee Ng, C. Lee, S. Nakamura, J. S. Speck, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications", Optics express, vol. 26, no. 6: Optical Society of America, pp. A219–A226, 2018.
2017
Shen, J-X., D. Wickramaratne, C. E. Dreyer, A. Alkauskas, E. Young, J. S. Speck, and C. G. Van de Walle, "Calcium as a nonradiative recombination center in InGaN", Applied Physics Express, vol. 10, no. 2: IOP Publishing, pp. 021001, 2017.
Ahmadi, E., O. S. Koksaldi, X. Zheng, T. Mates, Y. Oshima, U. K. Mishra, and J. S. Speck, "Demonstration of β-(Al x Ga1- x) 2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy", Applied Physics Express, vol. 10, no. 7: IOP Publishing, pp. 071101, 2017.
Li, H., M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. A. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, et al., "Efficient Semipolar (11–22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11–22) GaN/Sapphire Templates", ACS applied materials & interfaces, vol. 9, no. 41: American Chemical Society, pp. 36417–36422, 2017.
Li, H., M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. A. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, et al., "Efficient Semipolar (11–22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11–22) GaN/Sapphire Templates", ACS applied materials & interfaces, vol. 9, no. 41: American Chemical Society, pp. 36417–36422, 2017.
Ahmadi, E., O. S. Koksaldi, S. W. Kaun, Y. Oshima, D. B. Short, U. K. Mishra, and J. S. Speck, "Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy", Applied Physics Express, vol. 10, no. 4: IOP Publishing, pp. 041102, 2017.
Moser, N., J. McCandless, A. Crespo, K. Leedy, A. Green, A. Neal, S. Mou, E. Ahmadi, J. Speck, K. Chabak, et al., "Ge-Doped $${$$\backslash$beta$}$ $-Ga2O3 MOSFETs", IEEE Electron Device Letters, vol. 38, no. 6: IEEE, pp. 775–778, 2017.
Sun, W., Z. Zhang, T. Mohsin, E. Farzana, B. McSkimming, C. Lee, P. Saunier, J. Speck, SA. Ringel, and AR. Arehart, GENERAL MODEL FOR IRRADIATION-INDUCED DEGRADATION OF GaN HEMTS, 2017.
Oshima, Y., E. Ahmadi, S. Kaun, F. Wu, and J. S. Speck, "Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy", Semiconductor Science and Technology, vol. 33, no. 1: IOP Publishing, pp. 015013, 2017.
Jackson, C. M., A. R. Arehart, T. J. Grassman, B. McSkimming, J. S. Speck, and S. A. Ringel, "Impact of Surface Treatment on Interface States of ALD Al2O3/GaN Interfaces", ECS Journal of Solid State Science and Technology, vol. 6, no. 8: The Electrochemical Society, pp. P489–P494, 2017.
Mughal, A. J., E. C. Young, A. I. Alhassan, J. Back, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes and InGaN LEDs", Applied Physics Express, vol. 10, no. 12: IOP Publishing, pp. 121006, 2017.
Ahmadi, E., Y. Oshima, F. Wu, and J. S. Speck, "Schottky barrier height of Ni to β-(AlxGa1- x) 2O3 with different compositions grown by plasma-assisted molecular beam epitaxy", Semiconductor Science and Technology, vol. 32, no. 3: IOP Publishing, pp. 035004, 2017.
Shen, C., T. Khee Ng, C. Lee, J. T. Leonard, S. Nakamura, J. S. Speck, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications", Gallium Nitride Materials and Devices XII, vol. 10104: International Society for Optics and Photonics, pp. 101041U, 2017.
Lee, C., J. S. Speck, S. Nakamura, S. P. DenBaars, C. Shen, OOI. F. R. O. M. KAUST, A. Y. Alyamani, and MUNIR. M. E. L. - D. E. S. O. U. KACST, "Turbocharging LiFi with semi-polar lasers", III-Vs get out and about, pp. 60, 2017.
Alema, F., B. Hertog, A. V. Osinsky, P. Mukhopadhyay, M. Toporkov, W. V. Schoenfeld, E. Ahmadi, and J. Speck, "Vertical solar blind Schottky photodiode based on homoepitaxial Ga 2 O 3 thin film", Oxide-based Materials and Devices VIII, vol. 10105: International Society for Optics and Photonics, pp. 101051M, 2017.
Alema, F., B. Hertog, A. V. Osinsky, P. Mukhopadhyay, M. Toporkov, W. V. Schoenfeld, E. Ahmadi, and J. Speck, "Vertical solar blind Schottky photodiode based on homoepitaxial Ga 2 O 3 thin film", Oxide-based Materials and Devices VIII, vol. 10105: International Society for Optics and Photonics, pp. 101051M, 2017.
2016
Chen, J., YS. Puzyrev, EX. Zhang, DM. Fleetwood, RD. Schrimpf, AR. Arehart, SA. Ringel, SW. Kaun, ECH. Kyle, JS. Speck, et al., "Absil, P., see Karmarkar, AP, TDMR Sept. 2016 402-412 Ahmed, S., see Kuhns, N., TDMR June 2016 105-111 Akbari, M., Virkki, J., Sydanheimo, L., and Ukkonen, L., Toward Graphene-Based Passive UHF RFID Textile Tags: A Reliability Study; TDMR Sept. 2016 429-4", IEEE Transactions on Device and Materials Reliability, vol. 16, no. 4, pp. 1, 2016.
Hogan, J. E., S. W. Kaun, E. Ahmadi, Y. Oshima, and J. S. Speck, "Chlorine-based dry etching of β-Ga2O3", Semiconductor Science and Technology, vol. 31, no. 6: IOP Publishing, pp. 065006, 2016.
Oshima, Y., E. Ahmadi, S. C. Badescu, F. Wu, and J. S. Speck, "Composition determination of β-(Al x Ga1- x) 2O3 layers coherently grown on (010) β-Ga2O3 substrates by high-resolution X-ray diffraction", Applied Physics Express, vol. 9, no. 6: IOP Publishing, pp. 061102, 2016.
Zhang, Z., D. Cardwell, A. Sasikumar, ECH. Kyle, J. Chen, EX. Zhang, DM. Fleetwood, RD. Schrimpf, JS. Speck, AR. Arehart, et al., "Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures", Journal of Applied Physics, vol. 119, no. 16: AIP Publishing, pp. 165704, 2016.

Pages