Publications

Found 301 results
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2016
Von Dollen, P., S. Pimputkar, M. Abo Alreesh, H. Albrithen, S. Suihkonen, S. Nakamura, and J. S. Speck, "A new system for sodium flux growth of bulk GaN. Part I: System development", Journal of Crystal Growth, vol. 456: North-Holland, pp. 58–66, 2016.
Von Dollen, P., S. Pimputkar, M. Abo Alreesh, H. Albrithen, S. Suihkonen, S. Nakamura, and J. S. Speck, "A new system for sodium flux growth of bulk GaN. Part I: System development", Journal of Crystal Growth, vol. 456: North-Holland, pp. 58–66, 2016.
Von Dollen, P., S. Pimputkar, M. Abo Alreesh, S. Nakamura, and J. S. Speck, "A new system for sodium flux growth of bulk GaN. Part II: in situ investigation of growth processes", Journal of Crystal Growth, vol. 456: North-Holland, pp. 67–72, 2016.
Hwang, D., B. P. Yonkee, B. Saif Addin, R. M. Farrell, S. Nakamura, J. S. Speck, and S. DenBaars, "Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates", Optics Express, vol. 24, no. 20: Optical Society of America, pp. 22875–22880, 2016.
Dreyer, C. E., A. Alkauskas, J. L. Lyons, J. S. Speck, and C. G. Van de Walle, "Sources of Shockley-Read-Hall recombination in III-nitride light emitters", APS Meeting Abstracts, 2016.
2017
Shen, J-X., D. Wickramaratne, C. E. Dreyer, A. Alkauskas, E. Young, J. S. Speck, and C. G. Van de Walle, "Calcium as a nonradiative recombination center in InGaN", Applied Physics Express, vol. 10, no. 2: IOP Publishing, pp. 021001, 2017.
Ahmadi, E., O. S. Koksaldi, X. Zheng, T. Mates, Y. Oshima, U. K. Mishra, and J. S. Speck, "Demonstration of β-(Al x Ga1- x) 2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy", Applied Physics Express, vol. 10, no. 7: IOP Publishing, pp. 071101, 2017.
Li, H., M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. A. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, et al., "Efficient Semipolar (11–22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11–22) GaN/Sapphire Templates", ACS applied materials & interfaces, vol. 9, no. 41: American Chemical Society, pp. 36417–36422, 2017.
Li, H., M. Khoury, B. Bonef, A. I. Alhassan, A. J. Mughal, E. Azimah, M. E. A. Samsudin, P. De Mierry, S. Nakamura, J. S. Speck, et al., "Efficient Semipolar (11–22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11–22) GaN/Sapphire Templates", ACS applied materials & interfaces, vol. 9, no. 41: American Chemical Society, pp. 36417–36422, 2017.
Ahmadi, E., O. S. Koksaldi, S. W. Kaun, Y. Oshima, D. B. Short, U. K. Mishra, and J. S. Speck, "Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy", Applied Physics Express, vol. 10, no. 4: IOP Publishing, pp. 041102, 2017.
Moser, N., J. McCandless, A. Crespo, K. Leedy, A. Green, A. Neal, S. Mou, E. Ahmadi, J. Speck, K. Chabak, et al., "Ge-Doped $${$$\backslash$beta$}$ $-Ga2O3 MOSFETs", IEEE Electron Device Letters, vol. 38, no. 6: IEEE, pp. 775–778, 2017.
Sun, W., Z. Zhang, T. Mohsin, E. Farzana, B. McSkimming, C. Lee, P. Saunier, J. Speck, SA. Ringel, and AR. Arehart, GENERAL MODEL FOR IRRADIATION-INDUCED DEGRADATION OF GaN HEMTS, 2017.
Oshima, Y., E. Ahmadi, S. Kaun, F. Wu, and J. S. Speck, "Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy", Semiconductor Science and Technology, vol. 33, no. 1: IOP Publishing, pp. 015013, 2017.
Jackson, C. M., A. R. Arehart, T. J. Grassman, B. McSkimming, J. S. Speck, and S. A. Ringel, "Impact of Surface Treatment on Interface States of ALD Al2O3/GaN Interfaces", ECS Journal of Solid State Science and Technology, vol. 6, no. 8: The Electrochemical Society, pp. P489–P494, 2017.
Mughal, A. J., E. C. Young, A. I. Alhassan, J. Back, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes and InGaN LEDs", Applied Physics Express, vol. 10, no. 12: IOP Publishing, pp. 121006, 2017.
Ahmadi, E., Y. Oshima, F. Wu, and J. S. Speck, "Schottky barrier height of Ni to β-(AlxGa1- x) 2O3 with different compositions grown by plasma-assisted molecular beam epitaxy", Semiconductor Science and Technology, vol. 32, no. 3: IOP Publishing, pp. 035004, 2017.
Shen, C., T. Khee Ng, C. Lee, J. T. Leonard, S. Nakamura, J. S. Speck, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications", Gallium Nitride Materials and Devices XII, vol. 10104: International Society for Optics and Photonics, pp. 101041U, 2017.
Lee, C., J. S. Speck, S. Nakamura, S. P. DenBaars, C. Shen, OOI. F. R. O. M. KAUST, A. Y. Alyamani, and MUNIR. M. E. L. - D. E. S. O. U. KACST, "Turbocharging LiFi with semi-polar lasers", III-Vs get out and about, pp. 60, 2017.
Alema, F., B. Hertog, A. V. Osinsky, P. Mukhopadhyay, M. Toporkov, W. V. Schoenfeld, E. Ahmadi, and J. Speck, "Vertical solar blind Schottky photodiode based on homoepitaxial Ga 2 O 3 thin film", Oxide-based Materials and Devices VIII, vol. 10105: International Society for Optics and Photonics, pp. 101051M, 2017.
Alema, F., B. Hertog, A. V. Osinsky, P. Mukhopadhyay, M. Toporkov, W. V. Schoenfeld, E. Ahmadi, and J. Speck, "Vertical solar blind Schottky photodiode based on homoepitaxial Ga 2 O 3 thin film", Oxide-based Materials and Devices VIII, vol. 10105: International Society for Optics and Photonics, pp. 101051M, 2017.
2018
Espenlaub, A. C., A. I. Alhassan, S. Nakamura, C. Weisbuch, and J. S. Speck, "Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes", Applied Physics Letters, vol. 112, no. 14: AIP Publishing, pp. 141106, 2018.
Farzana, E., H. M. Foronda, C. M. Jackson, T. Razzak, Z. Zhang, J. S. Speck, A. R. Arehart, and S. A. Ringel, "Characterization of traps in InAlN by optically and thermally stimulated deep level defect spectroscopies", Journal of Applied Physics, vol. 124, pp. 145703, 2018.
Farzana, E., E. Ahmadi, J. S. Speck, A. R. Arehart, and S. A. Ringel, "Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 123, no. 16: AIP Publishing, pp. 161410, 2018.
Farzana, E., E. Ahmadi, J. S. Speck, A. R. Arehart, and S. A. Ringel, "Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 123, no. 16: AIP Publishing, pp. 161410, 2018.
Alhassan, A. I., N. G. Young, R. M. Farrell, C. Pynn, F. Wu, A. Y. Alyamani, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Development of high performance green c-plane III-nitride light-emitting diodes", Optics express, vol. 26, no. 5: Optical Society of America, pp. 5591–5601, 2018.

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