Publications
Found 647 results
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, "Terahertz Radiation from Nonpolar InN Due to Drift in an Intrinsic In-Plane Electric Field", Applied Physics Express, vol. 3, pp. 092201, 2010.
, "Terahertz Radiation from Nonpolar InN Due to Drift in an Intrinsic In-Plane Electric Field", Applied Physics Express, vol. 3, pp. 092201, 2010.
, "Thermopower of parallel conducting structures", APS March Meeting Abstracts, 2010.
, "Ultralow nonalloyed ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In (Ga) N regrowth", Applied physics letters, vol. 96, no. 14: AIP, pp. 143504, 2010.
, "β-Ga 2 O 3 growth by plasma-assisted molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 28, no. 2: AVS, pp. 354–359, 2010.
, "Comparison of time-resolved photoluminescence from InGaN single quantum wells grown on nonpolar and semipolar bulk GaN substrates", physica status solidi (c), vol. 6, no. S2: WILEY-VCH Verlag, 2009.
, "Current-induced spin polarization in gallium nitride", Applied Physics Letters, vol. 95, no. 7: AIP, pp. 072110, 2009.
, "Determination of polarization field in a semipolar (11 2\= 2) In Ga/ Ga N single quantum well using Franz–Keldysh oscillations in electroreflectance", Applied Physics Letters, vol. 94, no. 24: AIP, pp. 241906, 2009.
, "Electrical and electrothermal transport in InN: The roles of defects", Physica B: Condensed Matter, vol. 404, no. 23-24: North-Holland, pp. 4862–4865, 2009.
, "Electroluminescent measurement of the internal quantum efficiency of light emitting diodes", Applied Physics Letters, vol. 94, no. 18: AIP, pp. 181102, 2009.
, "Electron transport properties of antimony doped Sn O 2 single crystalline thin films grown by plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 106, no. 9: AIP, pp. 093704, 2009.
, "GaN-based embedded 2D photonic crystal LEDs: Numerical optimization and device characterization", physica status solidi (c), vol. 6, no. S2: WILEY-VCH Verlag, 2009.
, "GaN-based embedded 2D photonic crystal LEDs: Numerical optimization and device characterization", physica status solidi (c), vol. 6, no. S2: WILEY-VCH Verlag, 2009.
, "Growth of embedded photonic crystals for GaN-based optoelectronic devices", Journal of Applied Physics, vol. 106, no. 2: AIP, pp. 024309, 2009.
, "Growth of embedded photonic crystals for GaN-based optoelectronic devices", Journal of Applied Physics, vol. 106, no. 2: AIP, pp. 024309, 2009.
, "Growth of high quality N-polar AlN (000 1) on Si (111) by plasma assisted molecular beam epitaxy", Applied Physics Letters, vol. 94, no. 15: AIP, pp. 151906, 2009.
, "High performance MBE-grown N-face microwave GaN HEMTs with> 70% PAE", Device Research Conference, 2009. DRC 2009: IEEE, pp. 157–158, 2009.
, "High power N-face GaN high electron mobility transistors grown by molecular beam epitaxy with optimization of AlN nucleation", Applied Physics Letters, vol. 94, no. 18: AIP, pp. 182103, 2009.
, "High-performance N-face GaN microwave MIS-HEMTs with> 70% power-added efficiency", IEEE Electron Device Letters, vol. 30, no. 8: IEEE, pp. 802–804, 2009.
, "In adlayer mediated molecular beam epitaxial growth and properties of a-plane InN on freestanding GaN", Applied Physics Letters, vol. 94, no. 9: AIP, pp. 091905, 2009.
, "In adlayer mediated molecular beam epitaxial growth and properties of a-plane InN on freestanding GaN", Applied Physics Letters, vol. 94, no. 9: AIP, pp. 091905, 2009.
, "In adlayer mediated molecular beam epitaxial growth and properties of a-plane InN on freestanding GaN", Applied Physics Letters, vol. 94, no. 9: American Institute of Physics, pp. 091905–091905, 2009.
, "In adlayer mediated molecular beam epitaxial growth and properties of a-plane InN on freestanding GaN", Applied Physics Letters, vol. 94, no. 9: American Institute of Physics, pp. 091905–091905, 2009.
, "Investigation of (110) Sn O 2 growth mechanisms on Ti O 2 substrates by plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 106, no. 2: AIP, pp. 024911, 2009.
, "Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy", Applied Physics Letters, vol. 94, no. 12: AIP, pp. 121906, 2009.